ADG508AKR ,CMOS 4/8 CHAANNEL ANALOG MULTIPLEXERSSpecifications
Wide Supply Ranges (10.8V to 16.5V)
Extended Plastic Temperature Range
( --40oC t ..
ADG508ATQ ,CMOS 4/8 CHAANNEL ANALOG MULTIPLEXERSGENERAL DESCRIPTION
The ADG508A and ADG509A are CMOS monolithic analog
multiplexers with 8 chan ..
ADG508FBN ,4/8 Channel Fault-Protected Analog MultiplexersGENERAL DESCRIPTIONThe ADG508F, ADG509F and ADG528F are CMOS analog3. Low RON.multiplexers, the AD ..
ADG508FBNZ , 8-Channel/4-Channel Fault-Protected Analog Multiplexers
ADG508FBRN ,4/8 Channel Fault-Protected Analog MultiplexersGENERAL DESCRIPTIONThe ADG508F, ADG509F and ADG528F are CMOS analog3. Low RON.multiplexers, the AD ..
ADG508FBRNZ , 8-Channel/4-Channel Fault-Protected Analog Multiplexers
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ADG508ABQ-ADG508AKN-ADG508AKP-ADG508AKR-ADG508ATQ-ADG509ABQ-ADG509AKN-ADG509AKP-ADG509ATQ
CMOS 4/8 CHAANNEL ANALOG MULTIPLEXERS
ANALOG
DEVICES
4/8 Channel Analog Multiplexers
AlyyiilM/hotli5ilM
FEATURES
44V Supply Maximum Rating
Vss to IGo Analog Signal Range
Single/Dual Supply Specifications
Wide Supply Ranges (10.8V to 16.5V)
Extended Plastic Temperature Range
(--4ty'C to +85°C)
Low Power Dissipation (28mW max)
Low Leakage (20pA typ)
Available in 16-Lead DlP/SOIC and
20-Lead PLCC/LCCC Packages
Superior Alternative to:
DG508A, Hl-508
DGSOSA, Hl-509
GENERAL DESCRIPTION
The ADGSOSA and ADGSO9A are CMOS monolithic analog
multiplexers with 8 channels and dual 4 channels respectively.
The ADG508A switches one of 8 inputs to a common output
depending on the state of three binary addresses and an enable
input. The ADG509A switches one of 4 differential inputs to a
common differential output depending on the state of two binary
addresses and an enable input. Both devices have TTL and 5V
CMOS logic compatible digital inputs.
The ADGSOSA and ADG509A are designed on an enhanced
LC2MOS process which gives an increased signal capability of
Vss to vm, and enables operation over a wide range of supply
voltages. The devices can comfortably operate anywhere in the
10.8V t0 16.5V single or dual supply range. These multiplexers
also feature high switching speeds and low RON.
PRODUCT HIGHLIGHTS
Single/Dual Supply Specifications with a Wide Tolerance:
The devices are specified in the 10.8V to 16.5V range for
both single and dual supplies.
. Extended Signal Range:
The enhanced LCZMOS processing results in a high breakdown
and an increased analog signal range of Vss to Voo.
. Break-Before-Make Switching:
Switches are guaranteed break-before-make so that input
signals are protected against momentary shorting.
. Low Leakage:
Leakage currents in the range of 20pA make these multiplexers
suitable for high precision circuits.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
DECODER
F UNCTIONAL BLOCK DIAGRAMS
ADG508A
ADGSOSA
.'.'.'.
A0 A1 A2 EN A0 A1 EN
ORDERING GUIDE
Temperature Package
Model1 Range Option2
ADG508AKN - 40°C to + 85°C N-16
ADG508AKR - 40°C to + 85°C R-16A
ADG508AKP -- 40°C to + 85°C P-20A
ADG508ABQ - 40°C to + 85°C Q-16
ADG508ATQ - 55°C to + 125°C Q-16
ADG508ATE - 55°C to + 125°C E-20A
ADG5IT9ARN "-4ty'Ctd +85% N-16
ADG509AKR - 40°C to + 85°C R-16A
ADG509AKP - 40°C to + 85°C P-20A
ADG509ABQ - 40°C to + 85°C Q-16
ADG509ATQ - 55°C to + 125°C Q-16
ADG509ATE - 55°C to + 125°C E-20A
"ro order MIL-STD-883, Class B processed parts, add
/883B to part number. See Analog Devices Military
Products Databook (1990) for military data sheet.
2E = Leadless Ceramic Chip Carrier (LCCC); N =
Plastic DIP; P _ Plastic Leaded Chip Carrier (PLCC);
Q = Cerdip; R - 0.15" Small Outline IC (SOIC).
One Technology Way, PO. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
MMilM/hll%5il8h-SPEtyFliyirl01G
DUAL SUPPLY (IG, = +10.8V to +16.5V, Ilss = -10.8ll to -lii.5ll unless otherwise specified)
ADG508A ADGSOSA ADG508A
ADG509A ADG509A ADGSO9A
K Version B Version T Version
- 40°C to - 40"C to - 55''C to
Parameter + 25°C + 85°C 25°C + 85''C + 25''C + 125°C Units Comments
ANALOG SWITCH
Analog Signal Range Vss Vss Vss Vss Vss Vss V min
Vor, Flu, Vor, VDD Voo Voo V max
RON 280 280 280 fttyp -l0VsVss; +10V,Ios--1mA;TestCircuit1
450 600 450 600 450 600 n max
300 400 300 400 nrnax Voo--15V(t 10%),Vss- -15V(t 10%)
300 400 n max kv, = 15V( t 5%), Vss = - 15V( t 5%)
RON Drift 0.6 0.6 0.6 %/°Ctyp Vs--0,los--hnA
RON Match 5 5 5 % typ -10VssArss +10V,IDS = lmA
Is(OFF), Offlnput Leakage 0.02 0.02 0.02 nAtyp V1= t 10V, V2 = T 10V;TestCircuit2
l 50 1 50 I 50 nA max
h, (OFF), OffOutput Leakage 0.04 0.04 0.04 nA typ Vl = + 10V, V2 = T10V;Test Circuit 3
ADG508A I 100 l 100 l 100 nA max
ADGSO9A 1 50 1 50 l 50 nA max
lo (ON), On Channel Leakage 0.04 0.04 0.04 nA typ Vl = V2 = t 10V; Test Circuit 4
ADGSOBA l 100 1 100 l 100 nA max
ADGSO9A l 50 l 50 l 50 nA max
Iormr, Differential OffOutput
Leakage (ADGSO9A only) 25 25 25 nA max Vl = t 10V, V2 = Tlov/rest Circuit 5
DIGITAL CONTROL
Vrror, Input High Voltage 2.4 2.4 2.4 V min
VINL, Input Low Voltage 0.8 0.8 0.8 V max
IINLor IINH l l 1 wA max VIN_OIOVDD
Co: Digital Input Capacitance 8 8 8 pF max
DYNAMIC CHARACTERISTICS
[TRANWON' 200 200 200 ns typ VI = t 10V,V2 = T10V;TestCircuit6
300 400 300 400 300 400 ns max
[OPENI 50 50 50 ns typ Test Circuit 7
25 10 25 10 25 10 ns min
10N(EN)1 200 200 200 ns typ Test Circuit 8
300 400 300 400 300 400 ns max
[OFF(EN)1 200 200 200 ns typ Test Circuit 8
300 400 300 400 300 400 ns max
OFFlsolation 68 68 68 dBtyp VEN--0.8V,RL---lkn,%--15PF,
50 50 50 dB min Vs = 7V rms, f= lOOkHz
Cs (OFF) 5 5 5 pF typ VEN = 0.8V
Co (OFF)
ADGSOBA 22 22 22 pF typ VEN = 0.8V
ADGSO9A ll 11 11 pF typ
QINI, Charge Injection 4 4 4 pC typ Rs = on, Vs = 0; Test Circuit 9
POWER SUPPLY
loo 0.6 0.6 0.6 mA typ VIN=VINLorVINH
1.5 1.5 1.5 mA max
Iss, 20 20 20 wh typ VIN_leL 0f VINE
0.2 0.2 0.2 mA max
Power Dissipation 10 10 10 mW typ
28 28 28 mW max
'Sample tested at 25°C to ensure compliance.
Specifications subject to change without notice.
REV. B
MiyiilM/lr0MilM
SINGLE SUPPLY (h, = +10.8V to +16.5V, hs = Mil = Ill! unless otherwise noted.)
ADG508A ADGSOSA ADGSO8A
ADG509A ADG509A ADG509A
K Version B Version T Version
- 40''C to - 40°C to - 55''C to
Parameter + 25°C + 85''C + 25''C + 85°C + 25°C + 125°C Units Comments
ANALOG SWITCH
Analog Signal Range GND GND GND GND GND GND V min
Vor, Vos, Von Vor, Von Voo V max
RON 500 500 500 fltyp GNDsVss +10V,IDS =0.SmA Test;Circuitl
700 1000 700 1000 700 1000 n max
RON Drift 0.6 0.6 0.6 %/°C typ Vs--0,hss--0.5mA
RON Match 5 5 5 % typ GNDsVss + 10V, 105:0.5mA
Is(OFF),OfHnputLeakage 0.02 0.02 0.02 nAtyp V1= + 10WGND,V2=GND/+ 10V,
1 50 l 50 l 50 nA max Test Circuit 2
ID (OFF), OffOutput Leakage 0.04 0.04 0.04 nA typ VI-- + lOV/GND, V2 = GND/ ' 10V;
ADG508A I 100 1 100 l 100 nA max Test Circuit 3
ADGSO9A 1 50 1 50 1 50 nA max
ID(ON),On Channel Leakage 0.04 0.04 0.04 nAtyp V1=V2= +10V/GND;
ADG508A l 100 1 100 1 100 nA max Test Circuit 4
ADGSO9A l 50 l 50 l 50 nAmax
IDIFF, Differential OffOutput VI = + lOV/GND, V2 = GND/ + 10V;
Leakage (ADGSO9A only) 25 25 25 nA max Test Circuit 5
DIGITAL CONTROL
VIN", Input High Voltage 2.4 2.4 2.4 Vmin
Vom, Input Low Voltage 0.8 0.8 0 8 V max
[INLorIINH l l 1 WA max VIN_0[0 Vno
Cm Digital Input Capacitance 8 8 8 pF max
DYNAMIC CHARACTERISTICS
tTMNSlTION‘ 300 300 300 ns typ Vl = + 10V/GND, V2 = GND/ + 10V; Test Cicuit 6
450 600 450 600 450 600 ns max
[OPEN' 50 50 50 ns typ Test Circuit 7
2 5 10 25 10 25 10 ns min
10N(EN)' 250 250 250 ns typ Test Circuit
450 600 450 600 450 600 ns max
tOFF(EN)1 250 250 250 ns typ Test Circuit 8
_ 450 600 450 600 450 600 ns max
OFF Isolation 68 68 68 dB typ VEN = 0.8V, RI, = Ikn, Cr, = 15pF,
50 50 50 dBmin Vs=3.5Vrms,f=100kHz
Cs (OFF) 5 5 5 pF typ VEN=0.8V
ch, (OFF)
ADGSOSA 22 22 22 pF typ VEN=0.8V
ADG509A ll 11 11 pF typ
QINJ, Charge Injection 4 4 4 pC typ Rs = on, VS = 0V; Test Circuit 9
POWER SUPPLY
loo 0.6 0.6 0.6 mAtyp VIN=VINL°rV1NH
1 .5 1.5 l .5 mA max
Power Dissipation 10 10 10 mW typ
25 25 25 mW max
NOTE . . . .
lSample tested at 25°C to ensure compliance. CIN D igital Input capacitance
Srrcifications subject to change without notice. tOFF (EN) Delay time between the 50% and 10% points of
TERMINOLOGY
RON Match
RON Drift
Is (OFF)
is off
lo (OFF)
is off
ID (ON)
Vs (V0)
Cs (OFF)
CD (OFF)
condition
REV. B
Ohmic resistance between terminals D and S
Difference between the RON of any two channels
Change in Ros versus temperature
Source terminal leakage current when the switch
Drain terminal leakage current when the switch
Leakage current that flows from the closed switch
into the body
Analog voltage on terminal S or D
Channel input capacitance for "OFF" condition
Channel output capacitance for "OFF"
[TRANSITION
IINL (IINH)
the digital input and switch "OFF" condition
Delay time between the 50% and 90% points of
the digital inputs and switch "ON" condition
when switching from one address state to
another
"OFF" time measured between 50% points of
both switches when switching from one address
state to another
Maximum input voltage for Logic "o"
Minimum input voltage for Logic "I''
Input current of the digital input
Most positive voltage supply
Most negative voltage supply
Positive supply current
Negative supply current
MMtlM/hiMilM
ABSOLUTE MAXIMUM RATINGS' TRUTH TABLES
(T A = 25°C unless otherwise noted) A2 A1 A0 EN ON SWITCH
Von to Vss ........................ 44V x x x 0 NONE
Vroro to GND ....................... 25V 0 0 0 I l
Vss to GND ....................... - 25V
Analog Inputs1 0 0 1 1 2
Voltage at S, D ................. Vss -2V to 0 l 0 l 3
VDD f 2V or 0 1 l I 4
20mA , Whichever Occurs First 1 0 0 l 5
Continuous Current, S or D ............. 20mA l 0 1 1 6
Pulsed Current S or D 1 1 0 1 7
lms Duration, 10% Duty Cycle .......... 40mA 1 l 1 1 8
Digital Inputsl
Voltage at A, EN ................ Vss -4V to X---Don'tCare
Voo + 4V or ADG508A
20mA, Whichever Occurs First
Power Dissipation (Any Package) SW'FCH
Up to + 75°C ................... 470mW A1 A0 EN P AIR
Derates above + 75°C by ............. 6mW/°C
Operating Temperature x x 0 NONE
Commercial (K Version) ......... -40oC to + 85°C 0 0 l 1
Industrial (B Version) ........... - 40°C to + 85°C 0 1 l 2
Extended (T Version) ........... - 55°C to + 125°C l 0 l 3
Storage Temperature Range ......... -6S°C to + 150°C 1 I 1 4
NOTE X = Don't Care
'Overvoltage at A, EN, S or D will be clamped by diodes. Current should be
ADG509A
limited to the Maximum Rating above.
“COMMENT: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. The digital control inputs are Zener protected;
however, permanent damage may occur on unconnected devices subject to high energy electro-
static fields. Unused devices must be stored in conductive foam or shunts. The protective foam
should be discharged to the destination socket before devices are removed.
PIN CONFIGURATIONS
DIP, SOIC LCCC PLCC
V E 5’1 S' a 2
AD 1 o 16 A, 3 2 20 IS
EN 2 15 A2 1 ,
Vs, Ll 18 GND
Vss, 3 14 GND
SI 17 van
ADG508A
ADG508A
SI 4 ADG508A E Voo NC T PVIEW 15 NC TOP VIEW
TOP VIEW 0 (Not to Scale)
S2 E iNot to Scale) El ss S mm” Scale) " ss
S3 s " str S3 a 14 ss
S4 I 7 10 sr
DE 9 Sit 9 10111213
9 D D an IN A
m a u, m NC - NO CONNECT g © 5 :71 11: NC = ND CONNECT
An ll q " A,
EN l p 15 GND " Vor,
Vss I 3 El V90 17 513 ADG A
ADGSOBA 509
SIA 4 El SIB 16 NC TOP VIEW
ADG509A 1.1137332” (Nat to Scam
TOP VIEW 15 523
MA E (Notto Scale) El S2B s B
ll 538
10 $43
IO 11 " 13
aaa,',
NC T No CONNECT
NC = NO CONNECT
REV. B
Typical Performance Characteristics-MMM/layed
The multiplexers are guaranteed functional with reduced single or dual supplies down to 4.5V.
Voz, = +5V
Vss " -5V
500 7V \
L: V = +10.8v
300 V: = -10.8V
200 <>/\\ "s,
Voo = +15v _.....-'''"'-,...
Vss = -15v
-20 -15 A10 -5 0 5 10 15 20
VoNs)- Volts
HON as a Function of Vows): Dual Supply Voltage,
TA = +25°C
100 I I
Vor, = 116 5V
vss = -t6.5V
f 10 I
E 1.,10N1 """
, mom ""'
nu "_...,.,---'""
'i' 1 re f
E "" -,--"
y _,.--"''"
// e.--" Mom
01 /, "
" "---"'
25 35 45 55 65 75 85 95 105 115 125
TEMPERATURE - T
------v
Leakage Current as a Function of Temperature
(Note: Leakage Currents Reduce as the Supply Voltages
Reduce)
. "ss,,
g _ SINGLE
g SUPPLY
; 400 "sc'
: DUAL
SUPPLY
300 11it'2':lis, "ss,.
k----.-.
"sssss,sm.,m,,._,
100 1 1 l l
5 6 7 8 9 10 11
SUPPLY VOLTAGE - Volts
tTHANS/TION vs. Supply Voltage: Dual and Single Supplies,
Tn +25°C
(Note: For Voo and /Vss/ < 10V; V1 = VDD/VSSI
V2 = Vss/Voo. See Test Circuit 6)
12 13 14 15
REV. B
Vor, = +1o.av
500 Vss = 0
-' 400 //"
C' J:: Vor, = +15v
I 300 'ii(s,
-20 -15 -10 -s o 5 IO 15 20
vows) - Volts
HON as a Function of Vo/Vs): Single Supply Voltage,
TA = +25°C
J, /'sss,,,,
a 1.7 l 's,
g 'sss
F- _ssss,ss,
's--.....
1.5 l I l l 1
5 6 7 8 9 10 11 12 14 15
SUPPLY VOLTAGE- Volts
Trigger Levels vs. Power Supply Voltage, Dual or Single
Supply, TA +25°C
E s----""
ii w...,---"
- 0.4 ----"
w,,..,.-----'"''''"
l 1 t 1 I 1
5 6 7 8 5 10 1 1 12 1 3
SUPPLY VOLTAGE - Volts
loo vs. Supply Voltage: Dual or Single Supply, TA = +25°C
14 15 16 17
