ADG506AKN .. ,CMOS 8-/16-Channel Analog MultiplexersFEATURES44 V Supply Maximum RatingV to V Analog Signal RangeSS DDSingle/Dual Supply
ADG506AKNZ , CMOS 8-/16-Channel Analog Multiplexers
ADG506AKP ,CMOS 8-/16-Channel Analog MultiplexersSpecifications with a Wide ToleranceThe devices are specified in the 10.8 V to 16.5 V range forNOTE ..
ADG506AKR ,CMOS 8-/16-Channel Analog MultiplexersSpecificationsWide Supply Ranges (10.8 V to 16.5 V)Extended Plastic Temperature Range(–408C to +858 ..
ADG506ATQ ,CMOS 8-/16-Channel Analog MultiplexersFEATURES44 V Supply Maximum RatingV to V Analog Signal RangeSS DDSingle/Dual Supply
ADG507AKN ,CMOS 8-/16-Channel Analog MultiplexersCMOSa8-/16-Channel Analog MultiplexersADG506A/ADG507AFUNCTIONAL BLOCK DIAGRAM
AF4A1950S60DCC , Array BPF (AF Type)
AF82801IBM , Mobile Intel® GM45, GS45, and GL40 Express Chipsets for Embedded Computing
AF82801IEM , Mobile Intel® GM45, GS45, and GL40 Express Chipsets for Embedded Computing
AF9410N , N-Channel 30-V (D-S) MOSFET
AF9435P , P-Channel 30-V (D-S) MOSFET
AF9435P , P-Channel 30-V (D-S) MOSFET
ADG506ABQ-ADG506AKN-ADG506AKN ..-ADG506AKP-ADG506AKR-ADG506ATQ-ADG507AKN-ADG507AKN/+-ADG507AKP-ADG507AKR-ADG507AKRU-ADG507ATE-ADG507ATQ
CMOS 8-/16-Channel Analog Multiplexers
REV.C
CMOS
8-/16-Channel Analog Multiplexers
FUNCTIONAL BLOCK DIAGRAMFEATURES
44 V Supply Maximum Rating
VSS to VDD Analog Signal Range
Single/Dual Supply Specifications
Wide Supply Ranges (10.8 V to 16.5 V)
Extended Plastic Temperature Range
(–408C to +858C)
Low Power Dissipation (28 mW max)
Low Leakage (20 pA typ)
Available in 28-Lead DIP, SOIC, PLCC, TSSOP and LCCC
Packages
Superior Alternative to:
DG506A, Hl-506
DG507A, Hl-507
GENERAL DESCRIPTIONThe ADG506A and ADG507A are CMOS monolithic analog
multiplexers with 16 channels and dual 8 channels, respectively.
The ADG506A switches one of 16 inputs to a common output,
depending on the state of four binary addresses and an enable
input. The ADG507A switches one of eight differential inputs to
a common differential output, depending on the state of three
binary addresses and an enable input. Both devices have TTL
and 5 V CMOS logic compatible digital inputs.
The ADG506A and ADG507A are designed on an enhanced2MOS process, which gives an increased signal capability of
VSS to VDD and enables operation over a wide range of supply
voltages. The devices can operate comfortably anywhere in the
10.8 V to 16.5 V single or dual supply range. These multiplexers
also feature high switching speeds and low RON.
PRODUCT HIGHLIGHTSSingle/Dual Supply Specifications with a Wide Tolerance
The devices are specified in the 10.8 V to 16.5 V range for
both single and dual supplies.Extended Signal Range
The enhanced LC2MOS processing results in a high break-
down and an increased analog signal range of VSS to VDD.Break-Before-Make Switching
Switches are guaranteed break-before-make so input signals
are protected against momentary shorting.Low Leakage
Leakage currents in the range of 20 pA make these multiplexers
suitable for high precision circuits.
ORDERING GUIDENOTESTo order MIL-STD-883, Class B processed parts, add /883B to part number.
See Analog Devices’ Military/Aerospace Reference Manual (1994) for military
data sheet.E = Leadless Ceramic Chip Carrier (LCCC); N = Plastic DIP; P = Plastic
Leaded Chip Carrier (PLCC); Q = Cerdip; R = 0.3" Small Outline IC (SOIC);
RU = Thin Shrink Small Outline Package (TSSOP).
ADG506A/ADG507A–SPECIFICATIONS
Dual Supply(VDD = +10.8 V to +16.5 V, VSS = –10.8 V to –16.5 V unless otherwise noted)DYNAMIC CHARACTERISTICS
NOTESSample tested at +25°C to ensure compliance.
Specifications subject to change without notice.
ADG506A/ADG507ASingle Supply(VDD = +10.8 V to +16.5 V, VSS = GND = 0 V unless otherwise noted)NOTESSample tested at +25°C to ensure compliance.
Specifications subject to change without notice.
Truth Table (ADG506A)
Truth Table (ADG507A)
ADG506A/ADG507A
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG506A/ADG507A feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS1(TA = 25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Analog Inputs2
Voltage at S, D . . . . . . . . . . . . . . . . . . . . . . . VSS – 2 V to VDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + 2 V or
. . . . . . . . . . . . . . . . . . . . . . 20 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 20 mA
Pulsed Current S or D
1 ms Duration, 10% Duty Cycle . . . . . . . . . . . . . . . . 40 mA
Digital Inputs2
Voltage at A, EN . . . . . . . . . . . . . . . . . . . . . . . . . . VSS – 4 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to VDD + 4 V or
. . . . . . . . . . . . . . . . . . . . . . 20 mA, Whichever Occurs First
Power Dissipation (Any Package)
Up to +75°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
Derates above +75°C by . . . . . . . . . . . . . . . . . . 6 mW/°C
Operating Temperature
Commercial (K Version) . . . . . . . . . . . . . . –40°C to +85°C
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.Overvoltage at A, EN, S or D will be clamped by diodes. Current should be limited
to the Maximum Rating above.
PIN CONFIGURATIONS
DIP, SOIC
NC = NO CONNECT
VDD
VSS
S16S15
S14
S13
S12
S11
S10S1
GND
LCCC131415161718
S7A
S6A
S5A
S4A
S3A
S2A
S1A
S8BNCDBVS8A
S7B
S6B
S5B
S4B
S3B
S2B
S1B
PLCCS7B
S6B
S5B
S4B
S3B
S7A
S6A
S5A
S4A
S3A
S2B
S1B
S2A
S1AVDA
S8AS8B
PLCCS15
S14
S13
S12
S11
NC = NO CONNECT
S10NCV
A3 A2
A1
A0
GND
NC EN
S16
DIP, SOIC, TSSOP
LCCC131415161718
NC = NO CONNECT
GNDA3A0
S15
S14
S13
S12
S11
S10
S16NCNCVV
The multiplexers are guaranteed functional with reduced single or dual supplies down to 4.5 V.
Figure 1.RON as a Function of VD (VS): Dual Supply
Voltage, TA = +25°C
Figure 2.Leakage Current as a Function of Temperature
(Note: Leakage Currents Reduce as the Supply Voltages
Reduce)
Figure 4.RON as a Function of VD (VS) Single Supply
Voltage, TA = +25°C
Figure 5.Trigger Levels vs. Power Supply Voltage, Dual
or Single Supply, TA = +25°C
ADG506A/ADG507A
–Test CircuitsNote: All Digital Input Signal Rise and Fall Times Measured from 10% to 90% of 3 V. tR = tF = 20 ns.
Test Circuit 6.Switching Time of Multiplexer, tTRANSITION
Test Circuit 1.RONTest Circuit 2.IS (OFF)Test Circuit 3.ID (OFF)
Test Circuit 4.ID (ON)Test Circuit 5.IDIFF
