ADG444BR ,LC2MOS Quad SPST SwitchesGENERAL DESCRIPTIONThe ADG441, ADG442 and ADG444 are monolithic CMOS PRODUCT HIGHLIGHTSdevices comp ..
ADG444BR ,LC2MOS Quad SPST SwitchesSpecifications subject to change without notice.–2– REV. 0ADG441/ADG442/ADG444Single Supply(V = +12 ..
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ADG453BN ,LC2MOS 5 ohm RON SPST Switchesspecifications T to T unless otherwise noted.)Dual SupplyDD SS L MIN MAXB VersionT toMINParameter + ..
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ADG441BN-ADG441BR-ADG441TQ-ADG442BN-ADG442BR-ADG444BN-ADG444BR
LC2MOS Quad SPST Switches
REV.0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
LC2MOS Quad SPST Switches
FEATURES
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (< 70 Ω)
Low ΔRON (9 Ω max)
Low RON Match (3 Ω max)
Low Power Dissipation
Fast Switching Times
tON < 110 ns
tOFF < 60 ns
Low Leakage Currents ( 3 nA max)
Low Charge Injection (6 pC max)
Break-Before-Make Switching Action
Latch-Up Proof
Plug-In Upgrade for
DG201A/ADG201A, DG202A/ADG202A,
DG211/ADG211A
Plug in Replacement for DG441/DG442/DG444
APPLICATIONS
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Battery Powered Systems
Sample Hold Systems
Communication Systems
GENERAL DESCRIPTIONThe ADG441, ADG442 and ADG444 are monolithic CMOS
devices comprising four independently selectable switches. They
are designed on an enhanced LC2MOS process that provides
low power dissipation yet gives high switching speed and low on
resistance.
The on resistance profile is very flat over the full analog input
range ensuring good linearity and low distortion when switching
audio signals. High switching speed also makes the parts suit-
able for video signal switching. CMOS construction ensures
ultralow power dissipation making the parts ideally suited for
portable and battery powered instruments.
The ADG441, ADG442 and ADG444 contain four indepen-
dent SPST switches. Each switch of the ADG441 and ADG444
turns on when a logic low is applied to the appropriate control
input. The ADG442 switches are turned on with a logic high on
the appropriate control input. The ADG441 and ADG444
switches differ in that the ADG444 requires a 5 V logic power
supply which is applied to the VL pin. The ADG441 and
ADG442 do not have a VL pin, the logic power supply being
generated internally by an on-chip voltage generator.
NOTESTemperature ranges are as follows: B Versions: –40°C to +85°C; T Versions: –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG441/ADG442/ADG444–SPECIFICATIONS1
Dual Supply(VDD = +15 V ± 10%, VSS = –15 V ± 10%, VL = +5 V ± 10% (ADG444), GND = 0 V, unless otherwise noted)
ORDERING GUIDENOTESTo order MIL-STD-883, Class B processed parts, add /883B to T grade part
ADG441/ADG442/ADG444
Table I.Truth TableNOTES
1Temperature ranges are as follows: B Versions: –40°C to +85°C; T Versions: –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
Single Supply(VDD = +12 V ± 10%, VSS = 0 V, VL = +5 V ± 10% (ADG444), GND = 0 V, unless otherwise noted)
ADG441/ADG442/ADG444
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –25 V
VL to GND . . . . . . . . . . . . . . . . . . . . . .–0.3 V to VDD + 0.3 V
Analog, Digital Inputs2 . . . . . . . . . . . .VSS – 2 V to VDD + 2 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . .–40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . .–55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . .900 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . .76°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . .+300°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . .470 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .177°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . .+260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . .600 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . .77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
NOTESStresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those listed in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability. Only
one absolute maximum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ADG441/ADG442 PIN CONFIGURATION (DIP/SOIC)
ADG444 PIN CONFIGURATION (DIP/SOIC)
TERMINOLOGY
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although these devices feature proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
TRENCH ISOLATIONIn the ADG441, ADG442 and ADG444, an insulating oxide
layer (trench) is placed between the NMOS and the PMOS
transistors of each CMOS switch. Parasitic junctions, which oc-
cur between the transistors in junction isolated switches, are
eliminated, the result being a completely latch-up proof switch.
In junction isolation, the N and P wells of the PMOS and
NMOS transistors form a diode that is reverse-biased under
normal operation. However, during overvoltage conditions, this
diode becomes forward biased. A silicon-controlled rectifier
(SCR) type circuit is formed by the two transistors causing a sig-
nificant amplification of the current which, in turn, leads to
latch up. With trench isolation, this diode is removed, the result
being a latch-up proof switch.
Trench isolation also leads to lower leakage currents. The
ADG441, ADG442 and ADG444 have a leakage current
of 0.5 nA as compared with a leakage current of several
nanoamperes in non-trench isolated switches. Leakage current is
an important parameter in sample-and-hold circuits, this current
being responsible for the discharge of the holding capacitor with
time causing droop. The ADG441/ADG442/ADG444’s low
leakage current, along with its fast switching speeds, make it
suitable for fast and accurate sample-and-hold circuits.
Typical Performance CharacteristicsFigure 2.RON as a Function of VD (VS): Dual Supply
ADG441/ADG442/ADG444Figure 4.RON as a Function of VD (VS) for Different
Temperatures
Figure 5.Leakage Currents as a Function of VS (VD)
Figure 6.Crosstalk and Off Isolation vs. Frequency
