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AF4407PS , P-Channel 30-V (D-S) MOSFET
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AF4410N , N-Channel Enhancement Mode Power MOSFET
AF4502C , P & N-Channel 30-V (D-S) MOSFET
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AF4835P , P-Channel Enhancement Mode Power MOSFET
ADG438FBR-ADG439FBN-ADG439FBR-ADG439FBRW
High Performance 4/8 Channel Fault-Protected Analog Multiplexers
REV.D
High Performance 4/8 Channel
Fault-Protected Analog Multiplexers
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
Fast Switching Times
tON 250 ns max
tOFF 150 ns max
Fault and Overvoltage Protection (–40 V, +55 V)
All Switches OFF with Power Supply OFF
Analog Output of ON Channel Clamped Within Power
Supplies If an Overvoltage Occurs
Latch-Up Proof Construction
Break Before Make Construction
TTL and CMOS Compatible Inputs
APPLICATIONS
Data Acquisition Systems
Industrial and Process Control Systems
Avionics Test Equipment
Signal Routing Between Systems
High Reliability Control Systems
GENERAL DESCRIPTIONThe ADG438F/ADG439F are CMOS analog multiplexers, the
ADG438F comprising 8 single channels and the ADG439F
comprising four differential channels. These multiplexers pro-
vide fault protection. Using a series n-channel, p-channel, n-
channel MOSFET structure, both device and signal source
protection is provided in the event of an overvoltage or power
loss. The multiplexer can withstand continuous overvoltage
inputs from –40 V to +55 V. During fault conditions, the multi-
plexer input (or output) appears as an open circuit and only a
few nanoamperes of leakage current will flow. This protects not
only the multiplexer and the circuitry driven by the multiplexer,
but also protects the sensors or signal sources which drive the
multiplexer.
The ADG438F switches one of eight inputs to a common out-
put as determined by the 3-bit binary address lines A0, A1 and
A2. The ADG439F switches one of four differential inputs to a
common differential output as determined by the 2-bit binary
address lines A0 and A1. An EN input on each device is used to
enable or disable the device. When disabled, all channels are
switched OFF.
PRODUCT HIGHLIGHTS1. Fault Protection.
The ADG438F/ADG439F can withstand continuous volt-
age inputs up to –40 V or +55 V. When a fault occurs due
to the power supplies being turned off, all the channels
are turned off and only a leakage current of a few nano-
amperes flows.ON channel turns OFF while fault exists.Low RON.
4. Fast Switching Times.
5. Break-Before-Make Switching.
Switches are guaranteed break-before-make so that input
signals are protected against momentary shorting.
6. Trench Isolation Eliminates Latch-up.
A dielectric trench separates the p- and n-channel MOSFETs
thereby preventing latch-up.Improved OFF Isolation.
Trench isolation enhances the channel-to-channel isolation
of the ADG438F/ADG439F.
*Patent Pending.
ADG438F/ADG439F–SPECIFICATIONS1
Dual SupplyNOTESTemperature range is as follows: B Version: –40°C to +105°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS*(TA = +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –25 V
VEN, VA Digital Input . . . . . . .– 0.3 V to VDD + 2 V or 20 mA,
Whichever Occurs First
VS, Analog Input Overvoltage with Power ON . . . . .VSS – 25 V
to VDD + 40 V
VS,AnalogInputOvervoltagewithPowerOFF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–40Vto+55V
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .20 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle max) . . . . . . . . . . .40 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . .–40°C to +105°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
Plastic PackageJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . .+260°C
SOIC PackageJA, Thermal Impedance
Narrow Body . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Wide Body . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
Table I.ADG438F Truth TableX = Don’t Care
Table II.ADG439F Truth TableX = Don’t Care
ADG438F/ADG439F PIN CONFIGURATIONS
DIP/SOIC DIP/SOIC
GND
VDD
DS8
VSS
GND
S2A
S3A
S4A
S2B
S3B
S4B
VSS
S1A
VDD
S1BDB
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG438F/ADG439F features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE*N = Plastic DIP; R-16N = 0.15" Small Outline IC (SOIC); R-16W = 0.3"
Small Outline IC (SOIC).
ADG438F/ADG439F
TERMINOLOGYVSS
GND
RON
RON Drift
RON Match
IS (OFF)
ID (OFF)
ID, IS (ON)
VD (VS)
CD (OFF)
CD, CS (ON)
tON (EN)
tOFF (EN)
tOPEN
VINL
VINH
IINL (IINH)
Off Isolation
Charge Injection
IDD
Typical Performance GraphsFigure 1.On Resistance as a Function of VD (VS)
Figure 2.Input Leakage Current as a Function of VS
(Power Supplies OFF) During Overvoltage Conditions
Figure 3.Output Leakage Current as a Function of VS
Figure 7.Leakage Currents as a Function of Temperature
Figure 8.Switching Time vs. Power Supply
Figure 9.Switching Time vs. Temperature
VD (VS) – Volts
– Figure 4.On Resistance as a Function of VD (VS) for
Different Temperatures
–50–306010–2020–403040–10050
100m
10m
10n
100n
10p
100p
VS – INPUT VOLTAGE – Volts
– INPUT LEAKAGE – AFigure 5.Input Leakage Current as a Function of VS
(Power Supplies ON) During Overvoltage Conditions
VS, VD – Volts
LEAKAGE CURRENTS – nAFigure 6.Leakage Currents as a Function of VD (VS)
ADG438F/ADG439Fn-channel threshold voltage (VTN). When a voltage more nega-
tive than VSS is applied to the multiplexer, the p-channel
MOSFET will turn off since the analog input is more negative
than the difference between VSS and the p-channel threshold
voltage (VTP).
When the power supplies are present but the channel is off,
again either the p-channel MOSFET or one of the n-channel
MOSFETs will remain off when an overvoltage occurs.
Finally, when the power supplies are off, the gate of each
MOSFET will be at ground. A negative overvoltage switches on
the first n-channel MOSFET but the bias produced by the
overvoltage causes the p-channel MOSFET to remain turned
off. With a positive overvoltage, the first MOSFET in the series
will remain off since the gate to source voltage applied to this
MOSFET is negative.
During fault conditions, the leakage current into and out of the
ADG438F/ADG439F is limited to a few microamps. This pro-
tects the multiplexer and succeeding circuitry from over stresses
as well as protecting the signal sources which drive the multi-
plexer. Also, the other channels of the multiplexer will be
undisturbed by the overvoltage and will continue to operate
normally.
Figure 12.+55 V Overvoltage with Power OFF
Figure 13.–40 V Overvoltage with Power OFF
THEORY OF OPERATIONThe ADG438F/ADG439F multiplexers are capable of with-
standing overvoltages from –40 V to +55 V, irrespective of
whether the power supplies are present or not. Each channel of
the multiplexer consists of an n-channel MOSFET, a p-channel
MOSFET and an n-channel MOSFET, connected in series.
When the analog input exceeds the power supplies, one of the
MOSFETs will switch off, limiting the current to sub-microamp
levels, thereby preventing the overvoltage from damaging any
circuitry following the multiplexer. Figure 12 illustrates the
channel architecture that enables these multiplexers to with-
stand continuous overvoltages.
When an analog input of VSS + 1.2 V to VDD – 0.8 V is applied
to the ADG438F/ADG439F, the multiplexer behaves as a
standard multiplexer, with specifications similar to a standard
multiplexer, for example, the on-resistance is 180 W typically.
However, when an overvoltage is applied to the device, one of
the three MOSFETs will turn off.
Figures 10 to 13 show the conditions of the three MOSFETs for
the various overvoltage situations. When the analog input ap-
plied to an ON channel approaches the positive power supply
line, the n-channel MOSFET turns OFF since the voltage on
the analog input exceeds the difference between VDD and the
Q2Q3+55V
OVERVOLTAGE
n-CHANNEL
MOSFET IS
OFF
VDDVSSFigure 10.+55 V Overvoltage Input to the ON Channel
Q2Q3–40V
OVERVOLTAGE
n-CHANNEL
MOSFET IS
VDDVSS
MOSFET IS
OFFFigure 11.–40 V Overvoltage on an OFF Channel with
Multiplexer Power ON
Test Circuits
IDS
RON = V1/IDSTest Circuit 1.On Resistance
Test Circuit 3.ID (OFF)
+0.8VTest Circuit 2.IS (OFF)
