ADG436BN-ADG436BR Fast Delivery |IC PHOENIX CO.,LIMITED

ADG436BR ,Dual SPDT SwitchSPECIFICATIONSDual Supply(V = +15 V, V = –15 V, GND = 0 V, unless otherwise noted)DD SS–408C to Tes ..
ADG438FBR ,High Performance 4/8 Channel Fault-Protected Analog MultiplexersSpecifications subject to change without notice.–2– REV. DADG438F/ADG439FABSOLUTE MAXIMUM RATINGS*T ..
ADG438FBR ,High Performance 4/8 Channel Fault-Protected Analog MultiplexersFEATURES FUNCTIONAL BLOCK DIAGRAMSFast Switching Timest 250 ns maxONADG438F ADG439Ft 150 ns maxOFFS ..
ADG439FBN ,High Performance 4/8 Channel Fault-Protected Analog MultiplexersCHARACTERISTICSt 170 ns typ R = 1 MW , C = 35 pF;TRANSITION L L220 300 320 ns max V = – 10 V, V = 7 ..
ADG439FBR ,High Performance 4/8 Channel Fault-Protected Analog MultiplexersGENERAL DESCRIPTION1. Fault Protection.The ADG438F/ADG439F are CMOS analog multiplexers, theThe A ..
ADG439FBRW ,High Performance 4/8 Channel Fault-Protected Analog MultiplexersSPECIFICATIONSDual Supply (V = +15 V, V = –15 V, GND = 0 V, unless otherwise noted)DD SS ..
AF4362NSLA , N-Channel Enhancement Mode Power MOSFET
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AF4502C , P & N-Channel 30-V (D-S) MOSFET

ADG436BN-ADG436BR
Dual SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
S1A
S1B
IN1
S2A
S2B
IN2
REV.ADual SPDT Switch
FEATURES
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (12 V Typ)
Low DRON (3V Max)
Low RON Match (2.5V Max)
Low Power Dissipation
Fast Switching Times
tON < 175 ns
tOFF < 145 ns
Low Leakage Currents (5nA Max)
Low Charge Injection (10 pC)
Break-Before-Make Switching Action
APPLICATIONS
Audio and Video Switching
Battery Powered Systems
Test Equipment
Communications Systems
GENERAL DESCRIPTION
The ADG436 is a monolithic CMOS device comprising two
independently selectable SPDT switches. It is designed on an2MOS process which provides low power dissipation yet
gives high switching speed and low on resistance.
The on resistance profile is very flat over the full analog input
range ensuring good linearity and low distortion when switching
audio signals. High switching speed also makes the part suitable
for video signal switching. CMOS construction ensures ultralow
power dissipation making the part ideally suited for portable and
battery powered instruments.
Each switch conducts equally well in both directions when ON
and has an input signal range which extends to the power sup-
plies. In the OFF condition, signal levels up to the supplies are
blocked. All switches exhibit break-before-make switching ac-
tion for use in multiplexer applications. Inherent in the design is
low charge injection for minimum transients when switching the
digital inputs.
PRODUCT HIGHLIGHTSExtended Signal Range
The ADG436 is fabricated on an enhanced LC2MOS pro-
cess, giving an increased signal range which extends to the
supply rails.Low Power DissipationLow RONSingle Supply Operation
For applications where the analog signal is unipolar, the
ADG436 can be operated from a single rail power supply.
ADG436–SPECIFICATIONS1
Dual Supply
POWER REQUIREMENTS
NOTESTemperature range is as follows: B Version, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)
Single Supply
POWER REQUIREMENTS
NOTESTemperature range is as follows: B Version, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +12 V, VSS = 0 V, GND = 0 V, unless otherwise noted)
ADG436
ADG436
SOIC PackageJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ABSOLUTE MAXIMUM RATINGS1
(TA = +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +30 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –30 V
Analog, Digital Inputs2 . . . . . . . . . . . VSS – 2 V to VDD + 2 V
or 20 mA, whichever occurs first
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +125°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Plastic DIP PackageJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . +260°C
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG436 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
Table I.Truth Table
ORDERING GUIDE
TERMINOLOGY
PIN CONFIGURATION
(DIP/SOIC)
NC = NO CONNECT
IN1
VDD
S1A
S1B
S2A
S2BVSS
GNDIN2

VD, VS – Volts
– 03156912
Figure 4.RON as a Function of VD (VS)
for Different Temperatures:Single
Supply
VD, VS – Volts
(ON) – nA
–0.02
Figure 5.ID (ON) Leakage Current as a
Function of VD (VS):Dual Supply
VD, VS – Volts
(OFF) – nA
–0.02
Figure 6.IS (OFF) Leakage Current as
a Function of VD (VS):Dual Supply
VD, VS – Volts
–
–15–1015–50510
Figure 1.RON as a Function of VD (VS):
Dual Supply
VD, VS – Volts
– 156912
Figure 2.RON as a Function of VD (VS):
Single Power Supply
Figure 3. RON as a Function of VD (VS)
for Different Temperatures:Dual
Supply
VD, VS – Volts
SWITCHING TIME – ns
Figure 8.Switching Time as a Func-
tion of VD (VS):Dual Supply

SWITCHING FREQUENCY – kHz
– mA
0.2
Figure 9.IDD as a Function of Switch-
ing Frequency:Dual Supply
VD, VS – Volts
(ON) – nA
Figure 7.IS (ON) Leakage Current as a
Function of VD (VS):Dual Supply
ADG436–Typical Performance Characteristics

Partno	Mfg	Dc	Qty	Available	Descript
ADG436BN	AD	N/a	2	avai	Dual SPDT Switch
ADG436BR	ADI	N/a	9	avai	Dual SPDT Switch