ADG417BR ,LC2MOS Precision Mini-DIP Analog SwitchSPECIFICATIONS1(V = +15 V 6 10%, V = –15 V 6 10%, V = +5 V 6 10%, GND = 0 V, unless otherwise noted ..
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ADG419BR ,LC2MOS Precision Mini-DIP Analog SwitchSpecifications subject to change without notice.REV. A–2–ADG419Single Supply (V = +12 V 6 10%, V = ..
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ADG419TQ ,LC2MOS Precision Mini-DIP Analog SwitchSPECIFICATIONS(V = +15 V 6 10%, V = –15 V 6 10%, V = +5 V 6 10%, GND = 0 V, unless otherwise noted) ..
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ADG417BN-ADG417BR
LC2MOS Precision Mini-DIP Analog Switch
REV.A
LC2MOS Precision
Mini-DIP Analog Switch
FEATURES
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (<35 V)
Ultralow Power Dissipation (<35 mW)
Fast Switching Times
tON (160ns max)
tOFF (100ns max)
Break-Before-Make Switching Action
Plug-In Replacement for DG417
APPLICATIONS
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample Hold Systems
FUNCTIONAL BLOCK DIAGRAM
PRODUCT HIGHLIGHTSExtended Signal Range
The ADG417 is fabricated on an enhanced LC2MOS process,
giving an increased signal range that extends to the supply
rails.Ultralow Power DissipationLow RONSingle Supply Operation
For applications where the analog signal is unipolar, the
ADG417 can be operated from a single rail power supply.
The part is fully specified with a single +12 V power supply
and will remain functional with single supplies as low asV.
GENERAL DESCRIPTIONThe ADG417 is a monolithic CMOS SPST switch. This switch
is designed on an enhanced LC2MOS process that provides low
power dissipation yet gives high switching speed, low on resis-
tance and low leakage currents.
The on resistance profile of the ADG417 is very flat over the
full analog input range ensuring excellent linearity and low
distortion. The part also exhibits high switching speed and high
signal bandwidth. CMOS construction ensures ultralow power
dissipation making the parts ideally suited for portable and
battery powered instruments.
The ADG417 switch, which is turned ON with a logic low on
the control input, conducts equally well in both directions when
ON and has an input signal range that extends to the supplies.
In the OFF condition, signal levels up to the supplies are
blocked. The ADG417 exhibits break-before-make switching
action for use in multiplexer applications. Inherent in the design
is low charge injection for minimum transients when switching
the digital input.
POWER REQUIREMENTS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG417–SPECIFICATIONS
Dual Supply1(VDD = +15 V 6 10%, VSS = –15 V 6 10%, VL = +5 V 6 10%, GND = 0 V, unless otherwise noted)
ORDERING GUIDE
ADG417
Single Supply1LEAKAGE CURRENT
POWER REQUIREMENTS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +12 V 6 10%, VSS = 0 V, VL = +5 V 6 10%, GND = 0 V, unless otherwise noted)
Table I.Truth Table
PIN CONFIGURATION
DIP/SOIC
ADG417
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –25 V
VL to GND . . . . . . . . . . . . . . . . . . . . . .–0.3 V to VDD + 0.3 V
Analog, Digital Inputs2 . . . . . . . . . . . . .VSS – 2 V to VDD +2 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . .–55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .150°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . .400 mWJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . .100°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . .+260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . .400 mWJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . .155°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
VD (VS)Analog voltage on terminals D, S.
CS (OFF)“OFF” switch source capacitance.
CD (OFF)“OFF” switch drain capacitance.
CD, CS (ON)“ON” switch capacitance.
tONDelay between applying the digital control
input and the output switching on.
tOFFDelay between applying the digital control
input and the output switching off.
VINLMaximum input voltage for logic “0.”
VINHMinimum input voltage for logic “1.”
IINL (IINH)Input current of the digital input.
Charge InjectionA measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
Off IsolationA measure of unwanted signal coupling
through an “OFF” channel.
IDDPositive supply current.
ISSNegative supply current.Logic supply current.
TERMINOLOGYVDDMost positive power supply potential.
VSSMost negative power supply potential in dual
supplies. In single supply applications, it
may be connected to GND.Logic power supply (+5 V).
GNDGround (0 V) reference.Source terminal. May be an input or an
output.Drain terminal. May be an input or an
output.Logic control input.
RONOhmic resistance between D and S.
IS (OFF)Source leakage current with the switch
“OFF.”
ID (OFF)Drain leakage current with the switch
“OFF.”
ID, IS (ON)Channel leakage current with the switch
“ON.”
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG417 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–
VS, VD – VoltsFigure 1.RON as a Function of VD (VS): Dual Supply Voltage
–
VS, VD – VoltsFigure 2.RON as a Function of VD (VS) for Different
Temperatures
LEAKAGE CURRENT – nA
VS, VD – VoltsFigure 3.Leakage Currents as a Function of VS (VD)
Figure 4.RON as a Function of VD (VS): Single Supply
Voltage
Figure 5.RON as a Function of VD (VS) for Different
Temperatures
Figure 6.Leakage Currents as a Function of VS (VD)
ADG417
10mA
1nA
1mA
10nA
100nA
1mA
10mA
100mA
FREQUENCY – Hz
SUPPLYFigure 7.Supply Current vs. Input Switching Frequency
Figure 8.Switching Time vs. Power Supply
