ADG409BR. ,LC2MOS 4-/8-Channel High Performance Analog MultiplexersGENERAL DESCRIPTIONPRODUCT HIGHLIGHTSThe ADG408 and ADG409 are monolithic CMOS analog1. Extended Si ..
ADG409BR-REEL7 , LC2MOS 4-/8-Channel High Performance Analog Multiplexers
ADG409TQ ,LC2MOS 4-/8-Channel High Performance Analog MultiplexersAPPLICATIONSS1BAudio and Video RoutingDBAutomatic Test EquipmentS8 S4BData Acquisition Systems1 OF ..
ADG411BN ,LC2MOS Precision Quad SPST SwitchesSPECIFICATIONS(V = +15 V 6 10%, V = –15 V 6 10%, V = +5 V 6 10%, GND = 0 V, unless otherwise noted) ..
ADG411BNZ , LC2MOS Precision Quad SPST Switches
ADG411BR ,LC2MOS Precision Quad SPST SwitchesFEATURES44 V Supply Maximum Ratings615 V Analog Signal RangeS1 S1Low On Resistance (<35 V)IN1 IN1Ul ..
AF151-1CJ ,DUAL UNIVERSAL ACTIVE FILTERFeatures
I Independent Q, frequency and gain adjustment
I Very low sensitivity to external co ..
AF216M245001-T , CHIP ANTENNA
AF216M245001-T , CHIP ANTENNA
AF2302N , 20V N-Channel Enhancement Mode MOSFET
AF2302NWLA , 20V N-Channel Enhancement Mode MOSFET
AF2302NWLA , 20V N-Channel Enhancement Mode MOSFET
ADG408BN-ADG408BR-ADG408TQ-ADG409BN-ADG409BR-ADG409BR.-ADG409TQ
LC2MOS 4-/8-Channel High Performance Analog Multiplexers
REV.A
LC2MOS 4-/8-Channel
High Performance Analog Multiplexers
FEATURES
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (100 V max)
Low Power (ISUPPLY < 75 mA)
Fast Switching
Break-Before-Make Switching Action
Plug-in Replacement for DG408/DG409
APPLICATIONS
Audio and Video Routing
Automatic Test Equipment
Data Acquisition Systems
Battery Powered Systems
Sample and Hold Systems
Communication Systems
GENERAL DESCRIPTIONThe ADG408 and ADG409 are monolithic CMOS analog
multiplexers comprising eight single channels and four differen-
tial channels respectively. The ADG408 switches one of eight
inputs to a common output as determined by the 3-bit binary
address lines A0, A1 and A2. The ADG409 switches one of four
differential inputs to a common differential output as deter-
mined by the 2-bit binary address lines A0 and A1. An EN
input on both devices is used to enable or disable the device.
When disabled, all channels are switched OFF.
The ADG408/ADG409 are designed on an enhanced LC2MOS
process which provides low power dissipation yet gives high
switching speed and low on resistance. Each channel conducts
equally well in both directions when ON and has an input signal
range that extends to the supplies. In the OFF condition, signal
levels up to the supplies are blocked. All channels exhibit break-
before-make switching action, preventing momentary shorting
when switching channels. Inherent in the design is low charge
injection for minimum transients when switching the digital
inputs.
The ADG408/ADG409 are improved replacements for the
DG408/DG409 Analog Multiplexers.
PRODUCT HIGHLIGHTSExtended Signal Range
The ADG408/ADG409 are fabricated on an enhanced2MOS process giving an increased signal range that
extends to the supply rails.Low Power DissipationLow RONSingle Supply Operation
For applications where the analog signal is unipolar, the
ADG408/ADG409 can be operated from a single rail power
supply. The parts are fully specified with a single +12 V
power supply and will remain functional with single supplies
as low as +5 V.
FUNCTIONAL BLOCK DIAGRAMS
ADG408/ADG409–SPECIFICATIONS
DUAL SUPPLY1ANALOG SWITCH
LEAKAGE CURRENTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.Guaranteed by design, not subject to production test.
(VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)
ADG408/ADG409
SINGLE SUPPLY1ANALOG SWITCH
LEAKAGE CURRENTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +12 V, VSS = 0 V, GND = 0 V, unless otherwise noted)
ADG408/ADG409
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –25 V
Analog, Digital Inputs2 . . . . .VSS –2 V to VDD +2 V or 20 mA,
Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .20 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle max) . . . . . . . . . . .40 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . .–55°C to +125°C
Storage Temperature Range . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . .900 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . .76°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . .+300°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . .470 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . .117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . .+260°C
TSSOP Package, Power Dissipation . . . . . . . . . . . . . .450 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . .155°C/W
θJC, Thermal Impedance . . . . . . . . . . . . . . . . . . . . .50°C/W
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . .600 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . .77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at A, EN, S or D will be clamped by internal diodes. Current should
be limited to the maximum ratings given.
ORDERING INFORMATIONNOTESTo order MIL-STD-883, Class B processed parts, add /883B to T grade part
numbers.N = Plastic DIP; Q = Cerdip; R = 0.15" Small Outline IC (SOIC);
RU = Think Shrink Small Outline Package (TSSOP).
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG408/ADG409 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore,
proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
TERMINOLOGY
PIN CONFIGURATIONS (DIP/SOIC/TSSOP)
VSS
GND
VDD
VSS
S1A
S2A
S3A
S4A
GND
VDD
S1B
S2B
S3B
S4B
ADG408 Truth Table
ADG409 Truth Table
ADG408/ADG409
Typical Performance Characteristics
VD (VS) – Volts
– 0510
100Figure 1.RON as a Function of VD (VS): Dual Supply Voltage
VD (VS) – Volts
– 0510Figure 2.RON as a Function of VD (VS) for Different
Temperatures
VD (VS) – Volts
LEAKAGE CURRENT – nA
VD (VS) – Volts
– 12
100Figure 4.RON as a Function of VD (VS): Single Supply
Voltage
VD (VS) – Volts
– 810
110Figure 5.RON as a Function of VD (VS) for Different
Temperatures
VD (VS) – Volts
LEAKAGE CURRENT – nA
–0.02
