ADG212AKR-REEL ,Quad SPST SwitchGENERAL DESCRIPTION
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comprising four indepen ..
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The ADG221 and ADG222 are monolithic CMOS devices com-
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ADG221KP ,LC2MOS QUAD SPST SWITCHESFEATURES
44V Supply Maximum Rating
* 15V Analog Signal Range
Low Ron (600.)
Low Leakage ..
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AF216M245001-T , CHIP ANTENNA
ADG211AKNZ-ADG212AKR-REEL
LC2MOS ±15 V Quad SPST Switch
ANALOG
DEVICES
LBZMOS
[ Quad SPST Switches
- JllG21u/lll%212h
FEATURES
44V Supply Maximum Rating
i15V Analog Signal Range
Low RON (1150 max)
Low Leakage (0.5nA typ)
Break Before Make Switching
Single Supply Operation Possible
Extended Plastic Temperature Range
I- 40°C to + 85°C)
TTUCMOS Compatible
Available in 16-Lead DlP/SOIC and
20-Lead PLCC Packages
Superior Second Source:
ADG211A Replaces D6211
ADG212A Replaces D6212
GENERAL DESCRIPTION
The ADG211A and ADG212A are monolithic CMOS devices
comprising four independently selectable switches. They are
designed on an enhanced LCZMOS process which gives an in-
creased signal handling capability of t 15V. These switches also
feature high switching speeds and low Ros.
The ADG211A and ADG212A consist of four SPST switches.
They differ only in that the digital control logic is inverted. In
multiplexer applications, all switches exhibit break-before-make
switching action when driven simultaneously. Inherent in the
design is low charge injection for minimum transients when
switching the digital inputs.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
ADG211A ADG212A
m1 IN1
IN2 IN2
IN3 IN3
m4 IN4
SWITCHES SHOWN FOR A LOGIC "1" INPUT
PRODUCT HIGHLIGHTS
Extended Signal Range:
These switches are fabricated on an enhanced LCZMOS
process, resulting in high breakdown and an increased analog
signal range of t 15V.
. Single Supply Operation:
For applications where the analog signal is unipolar (0V to
15V), the switches can be operated from a single +15V
supply.
. Low Leakage:
Leakage currents in the range of 500ph make these switches
suitable for high precision circuits. The added feature of
Break before Make allows for multiple outputs to be tied
together for multiplexer applications while keeping leakage
errors to a minimum.
ADG211A ADGZIZA SWITCH
IN IN CONDITION
0 1 ON
1 0 OFF
Tablel. Truth Table
One Technology Way, P.0. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
aixaoiamor-
(h, = +15il, Ilss = -15ll, h '.e 511, unless otherwise
SPECIFICATION mu.)
ADG2 l IAKI‘; -
- ADG212AKN
Parameter 25°C - 4tPC to + 85''C Units Test Conditions
ANALOG SWITCH
Analog Signal Range t 15 t 15 Volts
RON 115 175 Omax -10VsaVss; +10V,IDS=1mA,
Test Circuit 1
RONVS- VD (Vs) 20 % typ
RON Drift 0.5 %/°C typ
RON Match 5 % typ Vs = 0V, los == lmA
Is (OFF) 0.5 nA typ VD = t 14V; Vs = :14V;Test Circuit 2
OFF Input Leakage 5 100 nA max
ID (OFF) 0.5 nA typ VD = 1 14V; Vs = T 14V; Test Circuit 2
OFF Output Leakage S 100 nA max
ID (ON) 0.5 nA typ Vo = Vs = : 14V; Test Circuit 3
ON Channel Leakage 5 200 nA max
DIGITAL CONTROL
Vom, Input High Voltage 2.4 V min TTL Compatibility is Independent of VL
VINL, Input Low Voltage 0.8 V max
IINL or IINH 1 " max
Cm, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS
IopENl 30 ns typ Test Circuit 4
tONl 600 ns max Test Circuit 5
toppl 450 ns max Test Circuit 5
OFF Isolation 80 dB typ Vs = lOV(p-p); f = 100kHz
R11 = 750; Test Circuit 6
Channel-to-Channel Crosstalk 80 dB typ Test Circuit 7
Cs(0FF) 5 PF typ
CD (OFF) 5 PF typ
Cs, CD(ON) 16 pF typ
le, Charge Injection 20 pC typ Rs = on; Cr. = lOOOpF; Vs = 0V
Test Circuit 8
POWER SUPPLY
Im, 0.6 mA typ Digital Inputs = VINL or VIN“
lm: 1 mA max
Iss 0.1 mA typ
Iss 0.2 mA max
Ir, 0.9 mA max
lSample tested at 25''C to ensure compliance.
Specifications subject to change without notice.
REV. B
ADGZI INADGZIZA
ABSOLUTE MAXIMUM RATINGS*
(TA = 25°C unless otherwise stated)
VDD to Vss ........................ 44V.
VDD to GND ....................... 25V
Vss to GND ....................... - 25V
Vr, to GND .................... - 0.3V, 25V
Analog Inputsl
Voltage at S, D ......... Vss --0.3V to Voo +0.3V
Continuous Current, S or D ............. 30mA
Pulsed Current S or D
lms Duration, 10% Duty Cycle .......... 70mA
Digital Inputs1
Voltage at IN .................. Vss - 2V to
VDD + 2V or
20mA, Whichever Occurs First
Power Dissipation (Any Package)
Up to + 75°C .................... 470mW
Derates above + 75°C by .............. 6mW/°C
Operating Temperature ........... -40oC to + 85°C
Storage Temperature Range ......... - 65°C to + 150°C
Lead Temperature (Soldering lOsec) ......... + 300°C
lOvervoltage at IN, S or D will be clamped by diodes. Current should be
limited to the Maximum Rating above.
*COMMENT: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one Absolute Maximum Rating may
be applied at any one time.
CAUTION
ESD (electrostatic discharge) sensitive device. The digital control inputs are diode protect-
ed; however, permanent damage may occur on unconnected devices subject to high energy
electrostatic fields. Unused devices must be stored in conductive foam or shunts. The protective
foam should be discharged to the destination socket before devices are removed.
ESD SENSITIVE DEVICE
PIN CONFIGURATIONS
DIP, SOIC
IN1 1 . " IN2
" 14 S2
Vss l: 2333; " van
GND E (NEYZVEE‘LL) 12 Vt
S4 6 11 S3
D4 7 IO D3
m4 8 9 ma
ORDERING GUIDE
Temperature Package
Model Range Option'
ADG211AKN -40oC to + 85°C N-16
ADG21 IAKR - 40°C to + 85°C R-16A
ADG21 IAKP - 40°C to + 85°C P-20A
ADG212AKN - 40°C to + 85°C N-16
ADG212AKR _ 40°C to + 85°C R-16A
ADG2 IZAKP - 40°C to + 85°C P-20A
*N = Plastic DIP; R =0.15" Small Outline IC (SOIC);
P = Plastic Leaded Chip Carrier (PLCC).
v ADG211A
ss I/ ADG212A
NC a TOP VIEW
(Not to Scale)
NC = NO CONNECT
A08211li/hiB21n-Typieal Performance Characteristics
The switches can comfortably operate anywhere in the 10V to 15V single or dual supply range,
with only a slight degradation in performance. The following graphs show the relevant performance
curves. The test circuits and test conditions are given in a following section, "Test Circuits. "
RON _ 12
-20 -N -1o -5 o 5 IO 15 20
Vo (vs) - Volts
Figure 1. RON as a Function of Vo (Vs): Dual , 15 Supplies
RON _ n
-20 - 15 -10 - 5 O 5 10 15 20
VD (Vs) - Volts
Figure 3. HON as a Function of Vo Ns): Dual , 10VSuppiies
100 l , I
i vun=15v
l ' Vss=-MN
pl 101032/
f, 1 //
8 oi''''" 19(0FF)I/S(OFH/
0.1 J--"" - ----q
o,,,-''''
w,,,--'"'"''
20 30 40 50 60 70 so 90
TEMPERATURE - "C
Figure 5. Leakage Currentas a Function of Temperature
(Note: Leakage Current Reduces as the Supply Voltages
Reduce)
25'C a
-20 -15 -10 -5 D 5 10 15 20
ltr, (Vs) - Volts
Figure 2. RON as a Function of VD (Vs): Single ( 15 VSupply
Vms=10V
A Vss-0
C' 90 /ks,, A 70°C -
f, , 25"C
--20 -15 -10 -5 0 5 10 15 20
Vo (Vs) - Volts
Figure 4. RON as a Function of Vo Ns): Single + 10VSupply
TEMP=0 TO +701;
E: IG "llilllllll "unuiiiulililuilt0"l ///////////// "lllllllllll
10 11 12 13 " 15
SUPPLY VOLTAGE -. Volts
Figure 6. Trigger Levels vs. Power Supply Voltage, Dual or
Single Supply Voltage
REV. B
Typical Performance Charatheristies-h0iQ1U/hi%212h
220 220 I
200 200 's.
180 180 'ss------,
'-al''f,,,
g 160 g 160 _-, _ '""s,,..,
I Iz \\\\L\ 25°C
J) 140 '" 140 "s""''"----------:.'.,,.]""'"""""
120 120 m - """--es,,..
100 100
:10 :11 :12 t13 :14 :15 110 +11 F12 +13 +14 +15
SUPPLY VOLTAGE - Volts
Figure r. to” vs. Supply Voltage, (Dual Supply)
SUPPLY VOLTAGE - Volts
Figure tt. to” vs. Supply Voltage, (Single Supply)
so - .-- - _ A -
In 25°C
I' 2 o
t :1: 0
:10 :11 :12 :13 :14 :15 +10 +11 +12 +13 +14 +15
SUPPLY VOLTAGE - Volts
Figure S. torr vs. Supply Voltage, (Dual Supply)
SUPPLY VOLTAGE - Volts
Figure 10. top; vs. Supply Voltage, (Single Supply)
50 60 I /
VDD=15V
Vss---15V
Q 20 d,",,
mm o Voo--15V
T3 “2" O / / Vss=
SINGLE DUAL G l "-'-""
SUP" SUPPLY g w"'
80 , \ < /
N i5-20 -sf
so -40
IO 11 12 13 14 15 -T6 -12 -8 -4 o 4 a 12 16
SUPPLY VOLTAGE - Volts
SOURCE VOLTAGE (Vs) - Volts
Figure 11. Off Isolation and Channel-to-Channel Crosstalk Figure 12. Charge Injection vs, Source Voltage (Vs) for Dual
vs. Supply Voltage and Single 15 VSupplies
REV. B -5-
