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ADS1251U/2K5 ,ResolutionPlus 24-Bit, 20kHz, Low Power Analog-to-Digital ConverterMAXIMUM RATINGSELECTROSTATICAnalog Input: Current .. ±100mA, MomentaryDISCHARGE SENSITIVITY±10mA, C ..
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AD8641AKSZ-REEL7
Low Power, Rail-to-Rail Output Precision JFET Amplifier
Low Power, Rail-to-Rail Output
Precision JFET Amplifier
Rev. 0
FEATURES
Low supply current: 250 µA max
Very low input bias current: 1 pA max
Low offset voltage: 750 µV max
Single-supply operation: 5 V to 26 V
Dual-supply operation: ±2.5 V to ±13 V
Rail-to-rail output
Unity gain stable
No phase reversal
SC70 package
APPLICATIONS
Line-/battery-powered instruments
Photodiode amplifiers
Precision current sensing
Medical instrumentation
Industrial controls
Precision filters
Portable audio
ATE
OUT
+IN
VEE
VCC
–IN
AD8641
TOP VIEW
(Not to Scale)05072-101
Figure 1. 5-Lead SC70 (KS-5)
–IN
+IN
VCC
OUT
AD8641
TOP VIEW
(Not to Scale)05072-102
NC = NO CONNECT Figure 2. 8-Lead SOIC (R-8)
GENERAL DESCRIPTIONThe AD8641 is a low power, precision JFET input amplifier
featuring extremely low input bias current and rail-to-rail
output. The ability to swing nearly rail-to-rail at the input and
rail-to-rail at the output enables designers to buffer CMOS
DACs, ASICs, and other wide output swing devices in single-
supply systems. The outputs remain stable with capacitive loads
of more than 500 pF.
The AD8641 is suitable for applications utilizing multichannel
boards that require low power to manage heat. Other applica-
tions include photodiodes, ATE reference level drivers, battery
management, and industrial controls.
The AD8641 is fully specified over the extended industrial
temperature range of –40° to +125°C. The AD8641 is available
in 5-lead SC70 and 8-lead SOIC lead-free packages.
TABLE OF CONTENTS Specifications.....................................................................................3
Electrical Characteristics.............................................................3
Absolute Maximum Ratings............................................................5
Typical Performance Characteristics.............................................6
Outline Dimensions.......................................................................12
Ordering Guide..........................................................................12
REVISION HISTORY
10/04—Initial Version: Revision 0
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS @ VS =5.0 V, VCM = 2.5 V, TA =25°C, unless otherwise noted.
Table 1. @ VS= ±13 V, VCM = 0 V, TA =25°C, unless otherwise noted.
Table 2. ABSOLUTE MAXIMUM RATINGS
Table 3. Absolute Maximum Ratings1
Table 4. Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1 Absolute maximum ratings apply at 25°C, unless otherwise noted. θJA is specified for the worst-case conditions, i.e., θJA is specified for devices
soldered on circuit boards for surface-mounted packages.
ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
TYPICAL PERFORMANCE CHARACTERISTICS
FRE
NCY
VOS (mV)05072-002
Figure 3. Input Offset Voltage
NUMBE
R OF AMP
OFFSET VOLTAGE (µV/°C)10.0
Figure 4. Offset Voltage Drift
FRE
NCY
VOS (mV)05072-004
NUMBE
R OF AMP
IFIE
TCVOS (µV/°C)10.0
Figure 6. Offset Voltage Drift
INP
T BIAS
(pA)
VCM (V)05072-006
Figure 7. Input Bias Current vs. VCM
INP
T BIAS
(pA)
VCM (V)05072-007
–0.5
