AD8512AR-REEL ,Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational AmplifiersFEATURES PIN CONFIGURATIONS Fast settling time: 500 ns to 0.1% 81OUT A V+ OUT A V+Low offset voltag ..
AD8512ARZ ,Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational AmplifiersGENERAL DESCRIPTION Fast slew rate and great stability with capacitive loads make the The AD8510, A ..
AD8512ARZ-REEL7 ,Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational AmplifiersSpecifications subject to change without notice. No license is granted by implication www.analog.c ..
AD8512ARZ-REEL7 ,Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational AmplifiersCHARACTERISTICS 1Offset Voltage (B Grade) V 0.08 0.4 mV OS −40°C < TA < +125°C 0.8 ..
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AD8512BR-REEL ,Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational AmplifiersFEATURES PIN CONFIGURATIONS Fast settling time: 500 ns to 0.1% 81OUT A V+ OUT A V+Low offset voltag ..
ADP3820ART-4.2 ,20V; lithium-ion battery changer. For Li-Ion battery chargers, desktop computers, hand-held instrumentsSpecifications subject to change without notice.ORDERING GUIDEABSOLUTE MAXIMUM RATINGS*Input Voltag ..
ADP3820ART-4.2RL7 ,±1% Precision, Single Cell Li-Ion Battery ChargerFEATURES61% Total Accuracy630 mA Typical Quiescent CurrentShutdown Current: 1 mA (Typical)Stable wi ..
ADP3820ART-4.2-RL7 ,±1% Precision, Single Cell Li-Ion Battery ChargerAPPLICATIONSVOUTLi-Ion Battery ChargersDesktop ComputersHand-Held InstrumentsADP3820Cellular Teleph ..
ADP3820ART-4.2-RL7 ,±1% Precision, Single Cell Li-Ion Battery ChargerSPECIFICATIONS IN OUT AParameter Conditions Symbol Min Typ Max UnitsINPUT VOLTAGE V 4.5 15 VINOUTPU ..
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ADP3820ARTZ-4.2-RL7 ,±1% Precision, Single Cell Li-Ion Battery Chargerfeatures of this device include foldback currentlimit, overload recovery, and a gate-to-source volt ..
AD8510AR-AD8510ARZ-AD8510ARZ-REEL7-AD8510BR-AD8512AR-AD8512ARM-R2-AD8512AR-REEL-AD8512ARZ-AD8512ARZ-REEL7-AD8512BR-AD8512BR-REEL-AD8513AR
Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers
Precision, Very Low Noise, Low Input Bias Current,
Wide Bandwidth JFET Operational Amplifiers
Rev. E
FEATURES
Fast settling time: 500 ns to 0.1%
Low offset voltage: 400 µV max
Low TCVOS: 1 µV/°C typ
Low input bias current: 25 pA typ
Dual-supply operation: ±5 V to ±15 V
Low noise: 8 nV/√Hz
Low distortion: 0.0005%
No phase reversal
Unity gain stable
APPLICATIONS
Instrumentation
Multipole filters
Precision current measurement
Photodiode amplifiers
Sensors
Audio
PIN CONFIGURATIONS
–IN A
+IN A
OUT B
–IN B
+IN B
02729-D-001
OUT A
–IN A
+IN A
OUT B
–IN B
+IN B
02729-D-002 Figure 1. 8-Lead MSOP (RM Suffix) Figure 2. 8-Lead SOIC (R Suffix)
–IN
+IN
OUT
02729-D-003
–IN
+IN
OUT
02729-D-004 Figure 3. 8-Lead MSOP (RM Suffix) Figure 4. 8-Lead SOIC (R Suffix)
–IN A
+IN A
+IN B
OUT D
–IN D
+IN D
+IN C
–IN B
–IN C
OUT C
02729-D-005
–IN A
+IN A
+IN B
OUT D
–IN D
+IN D
+IN C
–IN B
OUT B
–IN C
OUT C
02729-D-006 Figure 5. 14-Lead SOIC (R Suffix) Figure 6. 14-Lead TSSOP (RU Suffix)
GENERAL DESCRIPTION The AD8510, AD8512, AD8513 are single-, dual-, and quad-
precision JFET amplifiers that feature low offset voltage, input
bias current, input voltage noise, and input current noise.
The combination of low offsets, low noise, and very low input
bias currents makes these amplifiers especially suitable for high
impedance sensor amplification and precise current measure-
ments using shunts. The combination of dc precision, low noise,
and fast settling time results in superior accuracy in medical
instruments, electronic measurement, and automated test
equipment. Unlike many competitive amplifiers, the AD8510/
AD8512/AD8513 maintain their fast settling performance even
with substantial capacitive loads. Unlike many older JFET
amplifiers, the AD8510/AD8512/ AD8513 do not suffer from
output phase reversal when input voltages exceed the maximum
common-mode voltage range.
Fast slew rate and great stability with capacitive loads make the
AD8510/AD8512/AD8513 a perfect fit for high performance
filters. Low input bias currents, low offset, and low noise result
in a wide dynamic range of photodiode amplifier circuits. Low
noise and distortion, high output current, and excellent speed
make the AD8510/AD8512/AD8513 a great choice for audio
applications.
The AD8510/AD8512 are both available in 8-lead narrow SOIC
and 8-lead MSOP packages. MSOP packaged parts are only
available in tape and reel. The AD8513 is available in 14-lead
SOIC and TSSOP packages.
The AD8510/AD8512/AD8513 are specified over the –40°C to
+125°C extended industrial temperature range.
TABLE OF CONTENTS Specifications............................................................................................3
Electrical Characteristics.............................................................4
Absolute Maximum Ratings..................................................................6
ESD Caution..................................................................................6
Typical Performance Characteristics....................................................7
General Application Information........................................................13
Input Overvoltage Protection...................................................13
Output Phase Reversal...............................................................13
THD + Noise...............................................................................13
Total Noise Including Source Resistors...................................13
Settling Time...............................................................................14
Overload Recovery Time..........................................................14
Capacitive Load Drive...............................................................14
Open-Loop Gain and Phase Response....................................15
Precision Rectifiers.....................................................................16
I-V Conversion Applications....................................................17
Outline Dimensions..............................................................................19
Ordering Guide..........................................................................20
REVISION HISTORY
6/04—Data Sheet Changed from Rev. D to Rev. E Changes to Format.............................................................Universal
Changes to Specifications................................................................3
Updated Outline Dimensions.......................................................19
10/03—Data Sheet Changed from Rev. C to Rev. D Added AD8513 Model ......................................................Universal
Changes to Specifications................................................................3
Added Figures 36 through 40........................................................10
Added new Figures 55 and 57.......................................................17
Changes to Ordering Guide..........................................................20
9/03—Data Sheet Changed from Rev. B to Rev. C Changes to Ordering Guide ...........................................................4
Updated Figure 2............................................................................10
Changes to Input Overvoltage Protection section ....................10
Changes to Figures 10 and 11.......................................................12
Changes to Photodiode Circuits section.....................................13
Changes to Figures 13 and 14.......................................................13
Deleted Precision Current Monitoring section..........................14
Updated Outline Dimensions ......................................................15
3/03—Data Sheet Changed from Rev. A to Rev. B Updated Figure 5............................................................................11
Updated Outline Dimensions.......................................................15
8/02—Data Sheet Changed from Rev. 0 to Rev. A Added AD8510 Model.......................................................Universal
Added Pin Configurations...............................................................1
Changes to Specifications.................................................................2
Changes to Ordering Guide.............................................................4
Changes to TPCs 2 and 3..................................................................5
Added new TPCs 10 and 12.............................................................6
Replaced TPC 20...............................................................................8
Replaced TPC 27...............................................................................9
Changes to General Application Information Section..............10
Changes to Figure 5........................................................................11
Changes to I-V Conversion Applications Section......................13
Changes to Figures 13 and 14.......................................................13
Changes to Figure 17......................................................................14
SPECIFICATIONS @ VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1. ELECTRICAL CHARACTERISTICS @ VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. 1 AD8510/AD8512 only.
ABSOLUTE MAXIMUM RATINGS
Table 3. AD8510/AD8512/AD8513 Stress Ratings1
Table 4. Thermal Resistance 1 Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those listed in
the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device
reliability.
2 θJA is specified for worst-case conditions, i.e., θJA is specified for device
soldered in circuit board for surface-mount packages.
ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
this product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
TYPICAL PERFORMANCE CHARACTERISTICS
INPUT OFFSET VOLTAGE (mV)
NUMBE
R OF AMP
IFIE
02729-D-007Figure 7. Input Offset Voltage Distribution
TCVOS (µV/°C)
NUMBE
R OF AMP
IFIE456
02729-D-008Figure 8. AD8510/AD8512 TCVOS Distribution
TCVOS (µV/°C)
NUMBE
R OF AMP
IFIE456
02729-D-009Figure 9. AD8510/AD8512 TCVOS Distribution
TEMPERATURE (°C)
INP
T BIAS
CURRE
NT (pA)
10k
100k
02729-D-010Figure 10. Input Bias Current vs. Temperature
TEMPERATURE (°C)
INP
T OFFS
CURRE
NT (pA)
02729-D-011Figure 11. Input Offset Current vs. Temperature
SUPPLY VOLTAGE (V+– V– )
INP
T BIAS
CURRE
NT (pA)0232830
02729-D-012Figure 12. Input Bias Current vs. Supply Voltage
SUPPLY VOLTAGE (V+– V–)
CURRE
NT P
AMP
IFIE
R (mA)1.0
02729-D-013Figure 13. AD8512 Supply Current per Amplifier vs. Supply Voltage
LOAD CURRENT (mA)
OUTPUT VOLTAGE (V)03040507080
02729-D-014Figure 14. AD8510/AD8512 Output Voltage vs. Load Current
TEMPERATURE (°C)
CURRE
NT AMP
IFIE
R (mA)
02729-D-015Figure 15. AD8512 Supply Current per Amplifier vs. Temperature
SUPPLY VOLTAGE (V+– V–)
CURRE
NT (mA)
02729-D-016Figure 16. AD8510 Supply Current vs. Supply Voltage
FREQUENCY (Hz)
GAIN (
10k–30
100k10M50M
SE (
egrees)
02729-D-017Figure 17. Open-Loop Gain and Phase vs. Frequency
TEMPERATURE (°C)
CURRE
NT AMP
IFIE
R (mA)
02729-D-018Figure 18. AD8510 Supply Current vs. Temperature
FREQUENCY (Hz)
CLOSED-
OOP GAIN (–30
10k10M50M
100k
02729-D-019Figure 19. Closed-Loop Gain vs. Frequency
FREQUENCY (Hz)
CMRR (dB)
1001k0
10k10M100M
100k1M
02729-D-020Figure 20. CMRR vs. Frequency
FREQUENCY (Hz)
RR (dB)
1001k
10k10M100M
100k1M–20
02729-D-021Figure 21. PSRR vs. Frequency
FREQUENCY (Hz)
OUTP
UT IMP
DANCE
1001k0
10k10M100M
100k1M
02729-D-022Figure 22. Output Impedance vs. Frequency
FREQUENCY (kHz)
VOLTA
E N
ISE D
ITY (
V H2.50
02729-D-023Figure 23. Voltage Noise Density
TIME (1s/DIV)
VOLTA
E (
V/D
IV)
02729-D-024Figure 24. 0.1 Hz to 10 Hz Input Voltage Noise
FREQUENCY (Hz)
VOLTA
GE N
ISE D
ITY (
V H100
02729-D-025Figure 25. Voltage Noise Density vs. Frequency
TIME (1µs/DIV)
VOLTA
E (
V/D
IV)
02729-D-026Figure 26. Large Signal Transient Response
TIME (100ns/DIV)
VOLTA
GE (
50mV/D
IV)
02729-D-027Figure 27. Small Signal Transient Response
CAPACITANCE (pF)
OVER
OOT (
1001k10k
02729-D-028Figure 28. Small Signal Overshoot vs. Load Capacitance
FREQUENCY (Hz)
GAIN (
10k
100k10M50M
SE (
egrees)
02729-D-029Figure 29. Open-Loop Gain and Phase vs. Frequency
FREQUENCY (Hz)
CMRR (dB)
10k10M100M
120100k1M
02729-D-030Figure 30. CMRR vs. Frequency
