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AD844AN-AD844AQ-AD844BQ-AD844JR-AD844JR-REEL-AD844SQ-AD844SQ/883B
60 MHz, 2000 V/us Monolithic Op Amp
REV.C
60 MHz, 2000 V/ms
Monolithic Op Amp
CONNECTION DIAGRAMSFEATURES
Wide Bandwidth:60 MHz at Gain of –1
Wide Bandwidth:33 MHz at Gain of –10
Very High Output Slew Rate: Up to 2000 V/ms
20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 V
Fast Settling: 100 ns to 0.1% (10 V Step)
Differential Gain Error: 0.03% at 4.4 MHz
Differential Phase Error: 0.158 at 4.4 MHz
High Output Drive: 650 mA into 50 Ω Load
Low Offset Voltage: 150 mV max (B Grade)
Low Quiescent Current: 6.5 mA
Available in Tape and Reel in Accordance with
EIA-481A Standard
APPLICATIONS
Flash ADC Input Amplifiers
High Speed Current DAC Interfaces
Video Buffers and Cable Drivers
Pulse Amplifiers
PRODUCT DESCRIPTIONThe AD844 is a high speed monolithic operational amplifier fab-
ricated using Analog Devices’ junction isolated complementary
bipolar (CB) process. It combines high bandwidth and very fast
large signal response with excellent dc performance. Although
optimized for use in current to voltage applications and as an
inverting mode amplifier, it is also suitable for use in many non-
inverting applications.
The AD844 can be used in place of traditional op amps, but its
current feedback architecture results in much better ac perfor-
mance, high linearity and an exceptionally clean pulse response.
This type of op amp provides a closed-loop bandwidth which is
determined primarily by the feedback resistor and is almost in-
dependent of the closed-loop gain. The AD844 is free from the
slew rate limitations inherent in traditional op amps and other
current-feedback op amps. Peak output rate of change can be
over 2000 V/μs for a full 20 V output step. Settling time is typi-
cally 100 ns to 0.1%, and essentially independent of gain. The
AD844 can drive 50 Ω loads to ±2.5 V with low distortion and
is short circuit protected to 80 mA.
The AD844 is available in four performance grades and three
package options. In the 16-pin SOIC (R) package, the AD844J
is specified for the commercial temperature range of 0°C to
+70°C. The AD844A and AD844B are specified for the indus-
trial temperature range of –40°C to +85°C and are available in
the cerdip (Q) package. The AD844A is also available in an 8-pin
plastic mini-DIP (N). The AD844S is specified over the military
temperature range of –55°C to +125°C. It is available in the
8-pin cerdip (Q) package. “A” and “S” grade chips and devices
processed to MIL-STD-883B, REV. C are also available.
PRODUCT HIGHLIGHTS1. The AD844 is a versatile, low cost component providing an
excellent combination of ac and dc performance. It may be
used as an alternative to the EL2020 and CLC400/1.It is essentially free from slew rate limitations. Rise and fall
times are essentially independent of output level.The AD844 can be operated from ±4.5 V to ±18 V power
supplies and is capable of driving loads down to 50 Ω, as
well as driving very large capacitive loads using an external
network.The offset voltage and input bias currents of the AD844 are
laser trimmed to minimize dc errors; VOS drift is typically
1 μV/°C and bias current drift is typically 9 nA/°C.The AD844 exhibits excellent differential gain and differen-
tial phase characteristics, making it suitable for a variety of
video applications with bandwidths up to 60 MHz.The AD844 combines low distortion, low noise and low drift
with wide bandwidth, making it outstanding as an input am-
plifier for flash A/D converters.
16-Pin SOIC
(R) Package
8-Pin Plastic (N),
and Cerdip (Q) Packages
AD844–SPECIFICATIONSINPUT BIAS CURRENT
INPUT CHARACTERISTICS
INPUT CURRENT NOISE
OPEN LOOP TRANSRESISTANCE
SETTLING TIME
(@ TA = +258C and VS = 615 V dc, unless otherwise noted)
NOTESRated performance after a 5 minute warmup at TA = 25°C.Input signal 285 mV p-p carrier (40 IRE) riding on 0 mV to 642 mV (90 IRE) ramp. RL= 100 Ω; R1, R2 = 300 Ω.Input signal 0 dBm, CL = 10 pF, RL = 500 Ω, R1 = 500 Ω, R2 = 500 Ω in Figure 26.Input signal 0 dBm, CL =10 pF, RL = 500 Ω, R1 = 500 Ω, R2 = 50 Ω in Figure 26.CL = 10 pF, RL = 500 Ω, R1 = 1 kΩ, R2 = 1 kΩ in Figure 26.CL = 10 pF, RL = 500 Ω, R1 = 500 Ω, R2 = 50 Ω in Figure 26.
Specifications subject to change without notice. All min and max specifications are guaranteed.
Specifications shown in boldface are tested on all production units at final electrical test.
AD844
ABSOLUTE MAXIMUM RATINGS1Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V
Power Dissipation2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.1 W
Output Short Circuit Duration . . . . . . . . . . . . . . . . .Indefinite
Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . .±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .6 V
Inverting Input Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 mA
Transient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Storage Temperature Range (Q) . . . . . . . . . .–65°C to +150°C
Storage Temperature Range (N, R) . . . . . . . .–65°C to +125°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . .+300°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000 V
NOTESStresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect device
reliability.28-Pin Plastic Package:θJA = 100°C/Watt
8-Pin Cerdip Package:θJA = 110°C/Watt
16-Pin SOIC Package:θJA = 100°C/Watt
METALIZATION PHOTOGRAPHContact factory for latest dimensions.
Dimension shown in inches and (mm).
ORDERING GUIDEAD844AQ
AD844BQ
AD844SQ
*N = Plastic DIP; Q = Cerdip; R = Small Outline IC (SOIC).
(TA = +258C and VS = 615 V, unless otherwise noted)AD844–Typical CharacteristicsFigure 1.–3 dB Bandwidth vs.
Supply Voltage R1 = R2 = 500 Ω
Figure 4.Noninverting Input Voltage
Swing vs. Supply Voltage
Figure 7.Inverting Input Bias Cur-
rent (IBN) and Noninverting Input
Bias Current (IBP) vs. Temperature
Figure 2.Harmonic Distortion
vs. Frequency, R1 = R2 = 1 kΩ
Figure 5.Output Voltage Swing
vs. Supply Voltage
Figure 8.Output Impedance vs.
Frequency, Gain = –1, R1 = R2 = 1 kΩ
Figure 3.Transresistance
vs. Temperature
Figure 6.Quiescent Supply Current
vs. Temperature and Supply Voltage
Figure 9.–3 dB Bandwidth vs.
Temperature, Gain = –1,
R1 = R2 = 1 kΩ
Figure 10.Inverting Amplifier,
Gain of –1 (R1 = R2)
Figure 12.Phase vs. Frequency
Gain = –1, RL = 500 Ω, CL = 0 pF
Figure 11.Gain vs. Frequency for
Gain = –1, RL = 500 Ω, CL = 0 pF
Figure 13.Large Signal Pulse
Response, Gain = –1, R1 = R2 = 1 kΩ
Figure 14.Small Signal Pulse
Response, Gain = –1, R1 = R2 = 1 kΩ
Inverting Gain of 1 AC Characteristics
Inverting Gain of 10 AC CharacteristicsFigure 17. Phase vs. Frequency,
Gain = –10
Figure 16.Gain vs. Frequency,
Gain = –10
Figure 15.Gain of –10 Amplifier
AD844
Inverting Gain of 10 Pulse ResponseFigure 18. Large Signal Pulse
Response, Gain = –10, RL = 500 Ω
Figure 19. Small Signal Pulse
Response, Gain = –10, RL = 500 Ω
Figure 21. Gain vs. Frequency,
Gain = +10
Figure 22. Phase vs. Frequency,
Gain = +10
Noninverting Gain of 10 AC CharacteristicsFigure 20. Noninverting Gain of
+10 Amplifier
Figure 24. Small Signal Pulse
Response, Gain = +10, RL = 500 Ω
Figure 23. Noninverting Amplifier Large Signal
Pulse Response, Gain = +10, RL = 500 Ω
