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AD8367ARUZ-RL7 , 500 MHz, Linear-in-dB VGA with AGC Detector
ADP3330ARTZ-2.75R7 , High Accuracy Ultralow IQ, 200 mA, SOT-23, anyCAP™ Low Dropout Regulator
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ADP3330ARTZ-2.85-R7 ,High Accuracy Ultralow I(Q), 200 mA, SOT-23, anyCAP® Low Dropout RegulatorHigh Accuracy Ultralow I ,Q™200 mA, SOT-23, anyCAPaLow Dropout RegulatorADP3330
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AD8361ARM-AD8361ARM.-AD8361ARM-REEL-AD8361ARM-REEL7-AD8361ART-EVAL-AD8361ART-REEL-AD8361ART-REEL7
LF to 2.5 GHz TruPwr⑩ Detector
REV.A
LF to 2.5 GHz
TruPwr™ Detector
FUNCTIONAL BLOCK DIAGRAMS
micro_SOIC
SOT-23-6L
FEATURES
Calibrated RMS Response
Excellent Temperature Stability
Up to 30 dB Input Range at 2.5 GHz
700 mV rms, 10 dBm re 50 � Maximum Input�0.25 dB Linear Response Up to 2.5 GHz
Single Supply Operation: 2.7 V to 5.5 V
Low Power:3.3 mW at 3 V Supply
Rapid Power-Down to Less than 1 �A
APPLICATIONS
Measurement of CDMA, W-CDMA, QAM, Other
Complex Modulation Waveforms
RF Transmitter or Receiver Power Measurement
PRODUCT DESCRIPTIONThe AD8361 is a mean-responding power detector for use in high-
frequency receiver and transmitter signal chains, up to 2.5GHz.
It is very easy to apply. It requires only a single supply between
2.7 V and 5.5 V, power supply decoupling capacitor and an
input coupling capacitor in most applications. The output is a
linear-responding dc voltage with a conversion gain of 7.5 V/Vrms.
An external filter capacitor can be added to increase the averag-
ing time constant.
Figure 1.Output in the Three Reference Modes, Supply 3 V,
Frequency 1.9 GHz (SOT-23-6L Package Ground Reference
Mode Only)
TruPwr is a trademark of Analog Devices, Inc.
The AD8361 is intended for true power measurement of simple
and complex waveforms. The device is particularly useful for
measuring high crest-factor (high peak-to-rms ratio) signals, such
as CDMA and W-CDMA.
The AD8361 has three operating modes to accommodate a
variety of analog-to-digital converter requirements:Ground referenced mode, in which the origin is zero;Internal reference mode, which offsets the output 350 mV
above ground;Supply reference mode, which offsets the output to VS/7.5.
The AD8361 is specified for operation from –40°C to +85°C and
is available in 8-lead micro_SOIC and 6-lead SOT packages.
It is fabricated on a proprietary high fT silicon bipolar process.
AD8361–SPECIFICATIONS
(TA = 25�C, VS = 3 V, fRF = 900 MHz, ground reference output mode, unless otherwise
noted.)NOTESOperation at arbitrarily low frequencies is possible; see Applications section.Figure 13 and Figure 40 show impedance vs. frequency for the micro_SOIC and SOT respectively.Calculated using linear regression.Compensated for output reference temperature drift; see Applications section.SOT-23-6L operates in ground reference mode only.The available output swing, and hence the dynamic range, is altered by both supply voltage and reference mode; see Figures 35 and 36.Supply current is input level dependant; see Figure 12.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS1Supply Voltage VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
SREF, PWDN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V, VS
IREF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VS – 0.3 V, VS
RFIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V rms
Equivalent Power re 50 Ω . . . . . . . . . . . . . . . . . . . 13 dBm
Internal Power Dissipation2 . . . . . . . . . . . . . . . . . . . . 200 mW
SOT-23-6L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 mW
micro_SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 125°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.Specification is for the device in free air.
SOT-23-6L: θJA = 230°C/W; θJC = 92°C/W.
micro_SOIC: θJA = 200°C/W; θJC = 44°C/W.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
PIN FUNCTION DESCRIPTIONS
SOT-23-6L
ORDERING GUIDE*Device branded as J3A.
AD8361
–Typical Performance CharacteristicsFigure 2.Output vs. Input Level, Frequencies 100 MHz,
900 MHz, 1900 MHz, and 2500 MHz, Supply 2.7 V, Ground
Reference Mode, micro_SOIC
INPUT – V rms
OUTPUT
Volts
0.60.70.8Figure 3.Output vs. Input Level, Supply 2.7 V, 3.0 V, 5.0 V,
and 5.5 V, Frequency 900 MHz
Figure 5.Error from Linear Reference vs. Input Level,
3 Sigma to Either Side of Mean, Sine Wave, Supply 3.0 V,
Frequency 900 MHz
Figure 6.Error from Linear Reference vs. Input Level,
3 Sigma to Either Side of Mean, Sine-Wave, Supply 5.0 V,
Frequency 900 MHz
INPUT – V rms
ERROR
dB
0.020.60.2
Figure 8.Error from CW Linear Reference vs. Input,
3 Sigma to Either Side of Mean, IS95 Reverse Link Signal,
Supply 3.0 V, Frequency 900 MHz
Figure 11.
3 Sigma to Either Side of Mean Sine Wave, Supply 3.0 V,
Frequency 1900 MHz, Temperature –40°C to +85°C
Figure 12.Supply Current vs. Input Level, Supplies 3.0 V,
and 5.0 V, Temperatures –40°C, +25°C, and +85°C
FREQUENCY – MHz5001000
SHUNT CAPACITANCE
pF
1.8
AD8361
TEMPERATURE – �C
INTERCEPT CHANGE
Volts
–0.0580100Figure 14.Output Reference Change vs. Temperature,
Supply 3 V, Ground Reference Mode
Figure 15.Output Reference Change vs. Temperature,
Supply 3 V, Internal Reference Mode (micro_SOIC Only)
Figure 16.Output Reference Change vs. Temperature,
Supply 3 V, Supply Reference Mode (micro_SOIC Only)
Figure 17.Conversion Gain Change vs. Temperature,
Supply 3 V, Ground Reference Mode, Frequency 900 MHz
Figure 18.Conversion Gain Change vs. Temperature,
Supply 3 V, Internal Reference Mode, Frequency 900 MHz
(micro_SOIC Only)
Figure 19.Conversion Gain Change vs. Temperature,
Supply 3 V, Supply Reference Mode, Frequency 900 MHz
Figure 20.Output Response to Modulated Pulse Input
for Various RF Input Levels, Supply 3 V, Modulation
Frequency 900 MHz, No Filter Capacitor
Figure 21.Output Response to Modulated Pulse Input
for Various RF Input Levels, Supply 3 V, Modulation
Frequency 900 MHz, 0.01 µF Filter Capacitor
Figure 22.Hardware Configuration for Output Response
to Modulated Pulse Input
Figure 23.Output Response Using Power-Down Mode
for Various RF Input Levels, Supply 3 V, Frequency
900 MHz, No Filter Capacitor
Figure 24.Output Response Using Power-Down Mode
for Various RF Input Levels, Supply 3 V, Frequency
900 MHz, 0.01 µF Filter Capacitor
Figure 25.Hardware Configuration for Output Response
Using Power-Down Mode
AD8361Figure 26.Conversion Gain Change vs. Frequency, Supply
3 V, Ground Reference Mode, Frequency 100 MHz to
2500 MHz, Representative Device
Figure 27.Output Response to Gating On Power Supply,
for Various RF Input Levels, Supply 3 V, Modulation
Frequency 900 MHz, 0.01 µF Filter Capacitor
Figure 29.Conversion Gain Distribution Frequency
100 MHz, Supply 5 V, Sample Size 3000
Figure 30.Output Reference, Internal Reference Mode,
Supply 5 V, Sample Size 3000 (micro_SOIC Only)
