AD8354ACP-R2 ,100 MHzSPECIFICATIONS unless otherwise noted.)Parameter Conditions Min Typ Max UnitOVERALL FUNCTIONFrequen ..
AD8354ACP-REEL7 ,100 MHzapplications.the AD8354 delivers 4.8 dBm with 20 dB of gain at 900 MHz.By taking advantage of Analo ..
AD835AN ,250 MHz, Voltage Output 4-Quadrant MultiplierCHARACTERISTICSVoltage Swing ±2.2 ±2.5 V1vs. Temperature T to T ±2.0 VMIN MAXVoltage Noise Spectral ..
AD835AR ,250 MHz, Voltage Output 4-Quadrant MultiplierSpecifications subject to change without notice.–2– REV. AAD8351PIN CONNECTIONSABSOLUTE MAXIMUM RAT ..
AD8361 ,2.5 GHz TruPwr?DetectorApplications section.5SOT-23-6L operates in ground reference mode only.6The available output swing, ..
AD8361ARM ,LF to 2.5 GHz TruPwr⑩ DetectorLF to 2.5 GHz™aTruPwr DetectorAD8361
ADP3330ART-2.5-RL ,High Accuracy Ultralow I(Q), 200 mA, SOT-23, anyCAP® Low Dropout RegulatorFEATURES FUNCTIONAL BLOCK DIAGRAMHigh Accuracy Over Line and Load: 60.7% @ +258C,61.4% Over Tempera ..
ADP3330ART-2.5-RL7 ,High Accuracy Ultralow I(Q), 200 mA, SOT-23, anyCAP® Low Dropout Regulatorspecifications apply to all voltage options except –2.5.Parameter Symbol Conditions Min Typ Max Uni ..
ADP3330ART-2.5-RL7 ,High Accuracy Ultralow I(Q), 200 mA, SOT-23, anyCAP® Low Dropout Regulatorspecifications apply to all voltage options except –2.5.Parameter Symbol Conditions Min Typ Max Uni ..
ADP3330ART-2.75 ,High Accuracy Ultralow IQ, 200 mA, SOT-23, anyCAP⑩ Low Dropout RegulatorSPECIFICATIONS (@ T = –408C to +858C, V = +7 V ,C = 0.47 mF, C = 0.47 mF,A IN IN OUT1, 2unless ot ..
ADP3330ART-2.75-R7 ,High Accuracy Ultralow I(Q), 200 mA, SOT-23, anyCAP® Low Dropout RegulatorSpecifications subject to change without notice.–2– REV. AADP3330ADP3330-2.5–
ADP3330ART-2.75-R7 ,High Accuracy Ultralow I(Q), 200 mA, SOT-23, anyCAP® Low Dropout RegulatorSPECIFICATIONSA IN IN OUT1, 2unless otherwise noted). The following
AD8354ACP-R2-AD8354ACP-REEL7
100 MHz
REV.A
100 MHz to 2.7 GHz
RF Gain Block
FEATURES
Fixed Gain of 20 dB
Operational Frequency of 100 MHz to 2.7 GHz
Linear Output Power-Up to 4 dBm
Input/Output Internally Matched to 50 �
Temperature and Power Supply Stable
Noise Figure 4.2 dB
Power Supply 3 V or 5 V
APPLICATIONS
VCO Buffers
General Tx/Rx Amplification
Power Amplifier Predriver
Low Power Antenna Driver
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTIONThe AD8354 is a broadband, fixed-gain linear amplifier that
operates at frequencies from 100 MHz up to 2.7 GHz. It is
intended for use in a wide variety of wireless devices including
cellular, broadband, CATV, and LMDS/MMDS applications.
By taking advantage of Analog Devices’ high performance
complementary Si bipolar process, these gain blocks provide
excellent stability over process, temperature, and power supply.
This amplifier is single-ended and internally matched to 50 Ω
with a return loss of greater than 10 dB over the full operating
frequency range.
The AD8354 provides linear output power of nearly 4.3 dBm
with 20 dB of gain at 900 MHz when biased at 3 V and an
external RF choke is connected between the power supply and
the output pin. The dc supply current is 24 mA. At 900 MHz,
the output third order intercept (OIP3) is greater than 18 dBm;
at 2.7 GHz, the OIP3 is 14 dBm.
The noise figure is 4.2 dB at 900 MHz. The reverse isolation
(S12) is –33 dB at 900 MHz.
The AD8354 can also operate with a 5 V power supply, in which
case no external inductor is required. Under these conditions,
the AD8354 delivers 4.8 dBm with 20 dB of gain at 900 MHz.
The dc supply current is 26 mA. At 900 MHz, the OIP3 is
greater than 19 dBm, and at 2.7 GHz, the OIP3 is 15 dBm.
The noise figure is 4.4 dB at 900 MHz. The reverse isolation
(S12) is –33 dB.
The AD8354 is fabricated on Analog Devices’ proprietary, high
performance 25 GHz Si complementary bipolar IC process. The
AD8354 is available in a chip scale package that utilizes an exposed
paddle for excellent thermal impedance and low impedance
electrical connection to ground. It operates over a –40°C to
+85°C temperature range.
An evaluation board is available.
AD8354–SPECIFICATIONS
(VS = 3 V, TA = 25�C, 100 nH external inductor between VOUT and VPOS, ZO = 50 �,
unless otherwise noted.)Specifications subject to change without notice.
AD8354
SPECIFICATIONSSpecifications subject to change without notice.
(VS = 5 V, TA = 25�C, no external inductor between VOUT and VPOS, ZO = 50 �, unless otherwise noted.)
AD8354
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8354 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS*Supply Voltage VPOS . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
Input Power (re: 50 Ω) . . . . . . . . . . . . . . . . . . . . . . . . 10 dBm
Equivalent Voltage . . . . . . . . . . . . . . . . . . . . . . 700 mV rms
Internal Power Dissipation
Paddle Not Soldered . . . . . . . . . . . . . . . . . . . . . . . .325 mW
Paddle Soldered . . . . . . . . . . . . . . . . . . . . . . . . . . . 812 mW
�JA (Paddle Not Soldered) . . . . . . . . . . . . . . . . . . . . . 200°C/W
�JA (Paddle Soldered) . . . . . . . . . . . . . . . . . . . . . . . . . . 80°C/W
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 150°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 240°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
PIN CONFIGURATION
ORDERING GUIDE
PIN FUNCTION DESCRIPTIONS
210TPC 1. S11 vs. Frequency, VS = 3 V, TA = 25�C,
100 MHz ≤ f ≤ 3.0 GHz
TPC 2. Gain vs. Frequency, VS = 2.7 V, 3.0 V, and
3.3 V, TA = 25�C
TPC 4. S22 vs. Frequency, VS = 3 V, TA = 25�C,
100 MHz ≤ f ≤ 3.0 GHz
TPC 5. Gain vs. Frequency, VS = 3 V, TA = –40�C,
+25�C, and +85�C
AD8354TPC 7. P1 dB vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V,
TA = 27�C
TPC 8. Distribution of P1 dB, VS = 3 V, TA = 25�C,
f = 2.2 GHz
TPC 9. OIP3 vs. Frequency, VS = 2.7 V, 3 V, and
3.3 V, TA = 25�C
TPC 10. P1 dB vs. Frequency, VS = 3 V, TA = –40�C,
+27�C, and +85�C
TPC 11. Distribution of OIP3, VS = 3 V, TA = 25�C,
f = 2.2 GHz
TPC 12. OIP3 vs. Frequency, VS = 3 V, TA = –40�C,
+25�C, and +85�C
TPC 13. Noise Figure vs. Frequency, VS = 2.7 V, 3 V,
and 3.3 V, TA = 25�C
TPC 14. Distribution of Noise Figure, VS = 3 V,
TA = 25�C, f = 2.2 GHz
210TPC 16. Noise Figure vs. Frequency, VS = 3 V,
TA = –40�C, +25�C, and +85�C
TPC 17. Supply Current vs. Temperature, VS = 2.7 V,
3 V, and 3.3 V
AD8354TPC 19. Gain vs. Frequency, VS = 4.5 V, 5.0 V, and
5.5 V, TA = 25�C
TPC 20. Reverse Isolation vs. Frequency, VS = 4.5 V,
5 V, and 5.5 V, TA = 25�C
TPC 21. P1 dB vs. Frequency, VS = 4.5 V, 5 V, and
5.5 V, TA = 25�C
TPC 22. Gain vs. Frequency, VS = 5 V, TA = –40�C,
+25�C, and +85�C
TPC 23. Reverse Isolation vs. Frequency, VS = 5 V,
TA = –40�C, +25�C, and +85�C
TPC 24. P1 dB vs. Frequency, VS = 5 V, TA = –40�C,
+25�C, and +85�C
