AD8353ACP-REEL7 ,100 MHzapplications.the AD8353 delivers 8 dBm with 20 dB of gain at 900 MHz.By taking advantage of Analog ..
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AD8354ACP-REEL7 ,100 MHzapplications.the AD8354 delivers 4.8 dBm with 20 dB of gain at 900 MHz.By taking advantage of Analo ..
AD835AN ,250 MHz, Voltage Output 4-Quadrant MultiplierCHARACTERISTICSVoltage Swing ±2.2 ±2.5 V1vs. Temperature T to T ±2.0 VMIN MAXVoltage Noise Spectral ..
AD835AR ,250 MHz, Voltage Output 4-Quadrant MultiplierSpecifications subject to change without notice.–2– REV. AAD8351PIN CONNECTIONSABSOLUTE MAXIMUM RAT ..
ADP3330ART-2.5 ,High Accuracy Ultralow IQ, 200 mA, SOT-23, anyCAP⑩ Low Dropout RegulatorGENERAL DESCRIPTION The SOT-23-6 package has been thermally enhanced usingThe ADP3330 is a member o ..
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ADP3330ART-2.5-RL7 ,High Accuracy Ultralow I(Q), 200 mA, SOT-23, anyCAP® Low Dropout Regulatorspecifications apply to all voltage options except –2.5.Parameter Symbol Conditions Min Typ Max Uni ..
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ADP3330ART-2.75 ,High Accuracy Ultralow IQ, 200 mA, SOT-23, anyCAP⑩ Low Dropout RegulatorSPECIFICATIONS (@ T = –408C to +858C, V = +7 V ,C = 0.47 mF, C = 0.47 mF,A IN IN OUT1, 2unless ot ..
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AD8353ACP-REEL7
100 MHz
REV.0
100 MHz–2.7 GHz
RF Gain Block
FUNCTIONAL BLOCK DIAGRAM
FEATURES
Fixed Gain of 20 dB
Operational Frequency of 100 MHz to 2.7 GHz
Linear Output Power Up to 9 dBm
Input/Output Internally Matched to 50 �
Temperature and Power Supply Stable
Noise Figure 5.3 dB
Power Supply 3 V or 5 V
APPLICATIONS
VCO Buffers
General Tx/Rx Amplification
Power Amplifier Predriver
Low Power Antenna Driver
PRODUCT DESCRIPTIONThe AD8353 is a broadband, fixed-gain linear amplifier that
operates at frequencies from 100 MHz up to 2.7 GHz. It is
intended for use in a wide variety of wireless devices including
cellular, broadband, CATV, and LMDS/MMDS applications.
By taking advantage of Analog Devices’ high-performance
complementary Si bipolar process, these gain blocks provide
excellent stability over process, temperature, and power supply.
This amplifier is single-ended and internally matched to 50 Ω
with a return loss of greater than 10 dB over the full operating
frequency range.
The AD8353 provides linear output power of 9 dBm with 20 dB
of gain at 900 MHz when biased at 3 V and an external RF
choke is connected between the power supply and the output
pin. The dc supply current is 42 mA. At 900 MHz, the output third
order intercept (OIP3) is greater than 23 dBm, and is 19 dBm
at 2.7 GHz.
The noise figure is 5.3 dB at 900 MHz. The reverse isolation
(S12) is –36 dB at 900 MHz and –30 dB at 2.7 GHz.
The AD8353 can also operate with a 5 V power supply, in which
case no external inductor is required. Under these conditions,
the AD8353 delivers 8 dBm with 20 dB of gain at 900 MHz.
The dc supply current is 42 mA. At 900 MHz, the OIP3 is
greater than 22 dBm and is 19 dBm at 2.7 GHz. The noise
figure is 5.6 dB at 900 MHz. The reverse isolation (S12) is –35 dB.
The AD8353 is fabricated on Analog Devices’ proprietary, high-
performance 25 GHz Si complementary bipolar IC process. The
AD8353 is available in a chip scale package that utilizes an
exposed paddle for excellent thermal impedance and low imped-
ance electrical connection to ground. It operates over a –40°C
to +85°C temperature range.
An evaluation board is available.
AD8353–SPECIFICATIONS
(VS = 3 V, TA = 25�C, 100 nH external inductor between VOUT and VPOS, ZO = 50 �,
unless otherwise noted.)Specifications subject to change without notice.
AD8353
SPECIFICATIONS(VS = 5 V, TA = 25�C, no external inductor between VOUT and VPOS, ZO = 50 �, unless otherwise noted.)Specifications subject to change without notice.
AD8353
ABSOLUTE MAXIMUM RATINGS*Supply Voltage VPOS . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
Input Power (re: 50 Ω) . . . . . . . . . . . . . . . . . . . . . . . 10 dBm
Equivalent Voltage . . . . . . . . . . . . . . . . . . . . . . 700 mV rms
Internal Power Dissipation
Paddle Not Soldered . . . . . . . . . . . . . . . . . . . . . . .325 mW
Paddle Soldered . . . . . . . . . . . . . . . . . . . . . . . . . . . 812 mW
�JA (Paddle Soldered) . . . . . . . . . . . . . . . . . . . . . . . . .80°C/W
�JA (Paddle Not Soldered) . . . . . . . . . . . . . . . . . . . . 200°C/W
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . 240°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8353 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
PIN FUNCTION DESCRIPTIONS
ORDERING GUIDE
PIN CONFIGURATION
210 TPC 1.S11 vs. Frequency, VS = 3 V, TA = 25�C,
100 MHz ≤ f ≤ 3 GHz
TPC 2.Gain vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V,
TA = 25�C
210TPC 4.S22 vs. Frequency, VS = 3 V, TA = 25�C,
100 MHz ≤ f ≤ 3 GHz
TPC 5.Gain vs. Frequency, VS = 3 V, TA = –40�C, +25�C,
and +85�C
AD8353 TPC 7.P1 dB vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V,
TA = 25�C
TPC 8.Distribution of P1 dB VS = 3 V, TA = 25�C,
f = 2.2 GHz
TPC 9. OIP3 vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V,
TA = 25�C
TPC 10.P1 dB vs. Frequency, VS = 3 V, TA = –40�C, +25�C,
and +85�C
TPC 11.Distribution of OIP3, VS = 3 V, TA = 25�C,
f = 2.2 GHz
TPC 12.OIP3 vs. Frequency, VS = 3 V, TA = –40�C, +25�C,
and +85�C
