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AD8351ARM
Low Distortion Fully Differential RF / IF Amplifier
Low Distortion
Differential RF/IF Amplifier
FEATURES
–3 dB Bandwidth of 2.2 GHz for AV = 12 dB
Single Resistor Programmable Gain
0 dB ≤ AV ≤ 26 dB
Differential Interface
Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB
Low Harmonic Distortion
–79 dBc Second @ 70 MHz
–81 dBc Third @ 70 MHz
OIP3 of 31 dBm @ 70 MHz
Single-Supply Operation: 3 V to 5.5 V
Low Power Dissipation: 28 mA @ 5 V
Adjustable Output Common-Mode Voltage
Fast Settling and Overdrive Recovery
Slew Rate of 13,000 V/�s
Power-Down Capability
10-Lead MSOP Package
APPLICATIONS
Differential ADC Drivers
Single-Ended-to-Differential Conversion
IF Sampling Receivers
RF/IF Gain Blocks
SAW Filter Interfacing
FUNCTIONAL BLOCK DIAGRAM
PWUP
GENERAL DESCRIPTIONThe AD8351 is a low cost differential amplifier useful in RF and
IF applications up to 2.2 GHz. The voltage gain can be set from
unity to 26 dB using a single external gain resistor. The AD8351
provides a nominal 150 Ω differential output impedance. The
excellent distortion performance and low noise characteristics of
this device allow for a wide range of applications.
The AD8351 is designed to satisfy the demanding performance
requirements of communications transceiver applications. The
device can be used as a general-purpose gain block, an ADC driver,
and a high speed data interface driver, among other functions. The
AD8351 can also be used as a single-ended-to-differential
amplifier with similar distortion products as in the differential
configuration. The exceptionally good distortion performance
makes the AD8351 an ideal solution for 12-bit and 14-bit IF
sampling receiver designs.
Fabricated in ADI’s high speed XFCB process, the AD8351
has high bandwidth that provides high frequency performance
and low distortion. The quiescent current of the AD8351 is 28 mA
typically. The AD8351 amplifier comes in a compact 10-lead
MSOP package and will operate over the temperature range
of –40°C to +85°C.
REV.B
AD8351–SPECIFICATIONSINPUT/OUTPUT CHARACTERISTICS
POWER INTERFACE
(VS = 5 V, RL = 150 �, RG = 110 � (AV = 10 dB), f = 70 MHz, T = 25�C, parameters
specified differentially, unless otherwise noted .)
AD8351NOTESValues are specified differentially.See Applications section for single-ended-to-differential performance.
AD8351
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8351 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS*Supply Voltage VPOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 V
PWUP Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VPOS
Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . .320 mW
�JA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .125°C/W
Maximum Junction Temperature . . . . . . . . . . . . . . . . .125°C
Operating Temperature Range . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . .300°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
PIN CONFIGURATION
ORDERING GUIDE
PIN FUNCTION DESCRIPTIONS
TPC 1.Gain vs. Frequency for a 150 Ω Differential Load
(AV = 6 dB, 12 dB, and 18 dB)
TPC 2.Gain vs. Gain Resistor, RG (f = 100 MHz,
RL = 150 Ω, 1 kΩ, and Open)
TPC 3.Gain vs. Temperature at 100 MHz (AV = 10 dB)
(VS = 5 V, T = 25�C, unless otherwise noted.)TPC 4.Gain vs. Frequency for a 1 kΩ Differential Load
(AV = 10 dB, 18 dB, and 26 dB)
TPC 5.Gain Flatness vs. Frequency
(RL = 150 Ω and 1 kΩ, AV =10 dB)
TPC 6.Isolation vs. Frequency (AV = 10 dB)
AD8351TPC 7.Harmonic Distortion vs. Frequency for 2 V p-p
into RL = 1 kΩ (AV = 10 dB, at 3 V and 5 V Supplies)
TPC 8.Harmonic Distortion vs. Frequency for 2 V p-p into
RL = 150 Ω (AV = 10 dB, at 3 V and 5 V Supplies)
TPC 9.Noise Spectral Density (RTI) vs. Frequency
(RL = 150 Ω, 5 V Supply, AV = 10 dB)
TPC 10.Harmonic Distortion vs. Frequency for 2 V p-p
into RL = 1 kΩ Using Single-Ended Input (AV = 10 dB)
TPC 11.Harmonic Distortion vs. Frequency for 2 V p-p
into RL = 150 Ω Using Single-Ended Input (AV = 10 dB)
TPC 12.Noise Spectral Density (RTI) vs. Frequency
(RL = 150 Ω, 3 V Supply, AV = 10 dB)
TPC 13.Output Compression Point, P1 dB, vs. Frequency
(RL = 150 Ω and 1 kΩ, AV = 10 dB, at 3 V and 5 V Supplies)
TPC 14.Output Compression Point, P1 dB, vs. RG (f =
100 MHz, RL = 150 Ω, AV = 10 dB, at 3 V and 5 V Supplies)
TPC 15.Output Compression Point Distribution
(f = 70 MHz, RL = 150 Ω, AV = 10 dB)
TPC 16.Third-Order Intermodulation Distortion vs.
Frequency for a 2 V p-p Composite Signal into RL = 1 kΩ
(AV = 10 dB, at 5 V Supplies)
TPC 17.Third-Order Intermodulation Distortion
vs. Frequency for a 2 V p-p Composite Signal into
RL = 150 Ω (AV = 10 dB, at 5 V Supplies)
TPC 18.Third-Order Intermodulation Distortion
Distribution (f = 70 MHz, RL = 150 Ω, AV = 10 dB)
AD8351TPC 19.Input Impedance vs. Frequency
TPC 20.Output Impedance vs. Frequency
TPC 21.Phase and Group Delay (AV = 10 dB, at 5 V Supplies)
TPC 22. Input Reflection Coefficient vs. Frequency
(RS = RL = 100 Ω with and without 50 Ω Terminations)
3GHzTPC 23. Output Reflection Coefficient vs.
Frequency (RS = RL = 100 Ω)
TPC 24. Common-Mode Rejection Ratio,
