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AD8346ARU-AD8346ARU-REEL
0.8 GHz-2.5 GHz Quadrature Modulator
REV.0
0.8 GHz–2.5 GHz
Quadrature Modulator
FUNCTIONAL BLOCK DIAGRAM
IBBP
IBBN
COM1
COM1
LOIN
LOIP
VPS1
ENBL
QBBP
QBBN
COM4
COM4
VPS2
VOUT
COM3
COM2
FEATURES
High Accuracy
1 Degree rms Quadrature Error @ 1.9 GHz
0.2 dB I/Q Amplitude Balance @ 1.9 GHz
Broad Frequency Range:0.8 GHz–2.5 GHz
Sideband Suppression:–46 dBc @ 0.8 GHz
Sideband Suppression:–36 dBc @ 1.9 GHz
Modulation Bandwidth:DC–70 MHz
0 dBm Output Compression Level @ 0.8 GHz
Noise Floor: –147 dBm/Hz
Single 2.7 V–5.5 V Supply
Quiescent Operating Current: 45 mA
Standby Current:1 mA
16-Lead TSSOP Package
APPLICATIONS
Digital and Spread Spectrum Communication Systems
Cellular/PCS/ISM Transceivers
Wireless LAN/Wireless Local Loop
QPSK/GMSK/QAM Modulators
Single-Sideband (SSB) Modulators
Frequency Synthesizers
Image Reject Mixer
PRODUCT DESCRIPTIONThe AD8346 is a silicon RFIC I/Q modulator for use from
0.8 GHz to 2.5 GHz. Its excellent phase accuracy and ampli-
tude balance allow high performance direct modulation to RF.
The differential LO input is applied to a polyphase network
phase splitter that provides accurate phase quadrature from
0.8 GHz to 2.5 GHz. Buffer amplifiers are inserted between
two sections of the phase splitter to improve the signal-to-noise
ratio. The I and Q outputs of the phase splitter drive the LO
inputs of two Gilbert-cell mixers. Two differential V-to-I con-
verters connected to the baseband inputs provide the baseband
modulation signals for the mixers. The outputs of the two mixers
are summed together at an amplifier which is designed to drive a
50 W load.
This quadrature modulator can be used as the transmit modula-
tor in digital systems such as PCS, DCS, GSM, CDMA, and
ISM transceivers. The baseband quadrature inputs are directly
modulated by the LO signal to produce various QPSK and
QAM formats at the RF output.
Additionally, this quadrature modulator can be used with direct
digital synthesizers in hybrid phase-locked loops to generate
signals over a wide frequency range with millihertz resolution.
The AD8346 is supplied in a 16-lead TSSOP package, measur-
ing 6.5 · 5.1 · 1.1 mm. It is specified to operate over a
–40°C to +85°C temperature range and 2.7 V to 5.5 V supply
voltage range. The device is fabricated on Analog Devices’ high
performance 25 GHz bipolar silicon process.
AD8346–SPECIFICATIONS(VS = 5 V; TA = +258C, LO frequency = 1900 MHz; LO level = –10 dBm; BB frequency
= 100 kHz; BB inputs are dc biased to 1.2 V; BB input level = 1.0 V p-p each pin for 2.0 V p-p differential drive; LO source and RF output load
impedances are 50 V, dBm units are referenced to 50 V unless otherwise noted.)Specifications subject to change without notice.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8346 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS*Supply Voltage VPS1, VPS2 . . . . . . . . . . . . . . . . . . . . . .5.5 V
Input Power LOIP, LOIN (re. 50 W) . . . . . . . . . . . .+10 dBm
Min Input Voltage IBBP, IBBN, QBBP, QBBN . . . . . . . .0 V
Max Input Voltage IBBP, IBBN, QBBP, QBBN . . . . . . .2.5 V
Internal Power Dissipation . . . . . . . . . . . . . . . . . . . .500 mWJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .125°C/W
Operating Temperature Range . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . .–65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . .+300°C
ORDERING GUIDE
PIN CONFIGURATION*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may effect device reliability.
AD8346
PIN FUNCTION DESCRIPTIONS
VPS2
INPUTTO MIXER
CORECircuit A
LOIN
LOIP
VPS1
TO BIAS FOR
STARTUP/
SHUTDOWN
ENBLCircuit C
LO FREQUENCY – MHz
SSB POWER – dBm
1400180022001000Figure 2.Single Sideband (SSB) Out-
put Power (POUT) vs. LO frequency
(FLO). I and Q inputs driven in quad-
rature at Baseband Freq (FBB) =
100 kHz with differential amplitude
of 2.00 V p-p.
BASEBAND FREQUENCY – MHz
OUTPUT POWER VARIATION – dB
0.1110010Figure 5.I and Q Input Bandwidth.
FLO =1900 MHz, I or Q inputs driven
with differential amplitude of 2.00 V
p-p.
TEMPERATURE – 8C
SSB OUTPUT POWER – dBm
–30–10Figure 8. SSB POUT vs. Temperature.
FLO = 1900 MHz, I and Q inputs
TEMPERATURE – 8C
SSB OUTPUT POWER – dBm
–30–1010305070Figure 3.SSB POUT vs. Temperature.
I and Q inputs driven in quadrature
with differential amplitude of 2.00 V
p-p at FBB = 100 kHz.
LO FREQUENCY – MHz
SSB OUTPUT P1dB – dBm
1000–141200140016001800200022002400Figure 6.SSB Output 1 dB Compres-
sion Point (OP 1 dB) vs. FLO. I and Q
inputs driven in quadrature at FBB =
100 kHz.
LO FREQUENCY – MHz
CARRIER FEEDTHROUGH – dBm
1400180022001000Figure 9.Carrier Feedthrough vs. FLO.
LO input level = –10 dBm.
TEMPERATURE – 8C
CARRIER FEEDTHROUGH – dBm
–30–1010Figure 4.Carrier Feedthrough vs.
Temperature. FLO = 1900 MHz, LO
input level = –10 dBm.
CARRIER FEEDTHROUGH – dBm/
AFTER NULLING TO <–60dBm @ 258C
PERCENTAGE
–82–78–74–70–66–62–58–54–50–46Figure 7.Histogram showing
Carrier Feedthrough distributions at
the temperature extremes after null-
ing at ambient at FLO = 1900 MHz,
LO input level = –10 dBm.
LO FREQUENCY – MHz
SIDEBAND SUPPRESSION – dBc
–4813001700210025009001500190023001100Figure 10.Sideband Suppression
vs. FLO. VPOS = 2.7 V, I and Q inputs
AD8346
BASEBAND FREQUENCY – MHz
SB SUPPRESSION – dBc
–44468101214161820Figure 11.Sideband Suppression vs.
FBB. FLO = 1900 MHz, I and Q inputs
driven in quadrature with differential
amplitude of 2.00 V p-p.
TEMPERATURE – 8C
SB SUPPRESSION – dBc
–20020406080–30–1010305070Figure 14.Sideband Suppression vs.
Temperature. FLO = 1900 MHz, I and
Q inputs driven in quadrature with
differential amplitude of 2.00 V p-p at
FBB = 100 kHz.
BASEBAND FREQUENCY – MHz
INPUT THIRD HARMONIC
DISTORTION – dBc
–65468101214161820Figure 17.3rd Harmonic Distortion
vs. FBB. FLO =1900 MHz, I and Q inputs
driven in quadrature with differential
TEMPERATURE – 8C
INPUT THIRD HARMONIC
DISTORTION – dBc
–70–40–20020406080–30–1010305070Figure 12. 3rd Harmonic Distortion
vs. Temperature. FLO =1900 MHz,
I and Q inputs driven in quadrature
with differential amplitude of 2.00 V
p-p at FBB = 100 kHz.
BASEBAND DIFFERENTIAL INPUT
VOLTAGE – VP-P
INPUT THIRD HARMONIC
DISTORTION – dBc
SSB OUTPUT POWER – dBmFigure 15.3rd Harmonic Distortion
and SSB Output Power vs. Baseband
differential input voltage level. FLO
=1900 MHz, I and Q inputs driven in
quadrature at FBB = 100 kHz.
TEMPERATURE – 8C
SUPPLY CURRENT – mAFigure 18.Power Supply Current vs.
Temperature
FREQUENCY – MHz
RETURN LOSS – dB
1400180022001000Figure 13.Return Loss of LOIN Input
vs. FLO. VPOS = 5.0 V, LOIP pin ac
coupled to ground.
FREQUENCY – MHz
RETURN LOSS – dB
1400180022001000Figure 16.Return Loss of VOUT Out-
put vs. FLO. VPOS = 2.7 V.
FREQUENCY – MHz
RETURN LOSS – dB
1400180022001000Figure 19.Return Loss of VOUT Out-
put vs. FLO. VPOS = 5.0 V.