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AD8342ACPZ-REEL7
LF to 500MHz Active Receive Mixer
Active Receive Mixer
DC to 500 MHz
FEATURES
Broadband RF port: LF to 500 MHz
Conversion gain: 3 dB
Noise figure: 12 dB
Input IP3: 24 dBm
Input P1dB: 8.5 dBm
LO drive: 0 dBm
External control of mixer bias for low power operation
Single-ended, 50 Ω LO input ports
High Input Impedance RF port
Single-supply operation: 5 V @ 97 mA
Power-down mode
Exposed paddle LFCSP: 3 mm × 3 mm
APPLICATIONS
Cellular base station receivers and transmitters
ISM receivers and transmitters
Radio links
RF Instrumentation
FUNCTIONAL BLOCK DIAGRAM Figure 1.
GENERAL DESCRIPTION The AD8342 is a high performance, broadband active mixer. It
is well suited for demanding receive applications that require
wide bandwidth on all ports and very low intermodulation dis-
tortion and noise figure.
The AD8342 provides a typical conversion gain of 3dB at
500 MHz. The integrated LO driver supports a 50 Ω input im-
pedance with a low LO drive level, helping to minimize external
component count.
The high input impedance RF port can be terminated and
driven single ended or a matching network can be used for best
noise or power match. The RF input accepts input signals as
large as 1.7 V p-p or 8 dBm (re: 50 Ω) at P1dB.
The open-collector differential outputs provide excellent bal-
ance and can be used with a differential filter or IF amplifier,
such as the AD8369 or AD8351. These outputs may also be
converted to a single-ended signal through the use of a match-
ing network or a transformer (balun). When centered on the
VPOS supply voltage, each of the differential outputs may swing
2.5 V p-p.
The AD8342 is fabricated on an Analog Devices proprietary,
high performance SiGe IC process. The AD8342 is available in a
16-lead LFCSP package. It operates over a −40°C to +85°C tem-
perature range. An evaluation board is also available.
SPECIFICATIONS VS = 5 V, TA = 25°C, fRF = 500 MHz, fLO = 600 MHz, LO power = 0 dBm, ZO = 50 Ω, RBIAS = 1.82 kΩ, unless otherwise noted.
Table 1. AC PERFORMANCE VS = 5 V, TA = 25°C, LO power = 0 dBm, ZO = 50 Ω, RBIAS = 1.82 kΩ, unless otherwise noted.
Table 2. ABSOLUTE MAXIMUM RATINGS
Table 3. Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational sec-
tion of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VPLO
LOCM
LOIN
COMM
VPD
EXR
COMM
COMM
IFOP
IFOM
COMM
COMM
RFCM
RFIN
VPMX04826-0-002
Figure 2. 16-Lead LFCSP
Table 4. Pin Function Descriptions RF Frequency - MHz
ion G
dB
Figure 3. Conversion Gain vs. RF Frequency for Multiple IF Frequencies
RF Frequency - MHz
Figure 4. Single Sideband Noise Figure vs RF Frequency for Multiple IF
Frequencies
RF Frequency - MHz
Figure 5. Input Compression Point vs RF Frequency for Multiple IF Frequencies
RF Frequency - MHz
IIP
Figure 6.. Input IP3 vs. RF Frequency for Multiple IF Frequencies
