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AD8230YRZ
16V Zero-Drift Auto-Zero Instrumentation Amplifier
16 V Rail-to-Rail, Zero-Drift,
Precision Instrumentation Amplifier
Rev. 0
FEATURES
Resistor programmable gain range: 101
to 1000
Supply voltage range: ±4 V to ±8 V, +8 V to +16 V
Rail-to-rail input and output
Maintains performance over −40°C to +125°C
EXCELLENT AC AND DC PERFORMANCE
110 dB minimum CMR @ 60 Hz, G = 10 to 1000
10 µV max offset voltage (RTI, ±5 V)
50 nV/°C max offset drift
20 ppm max gain nonlinearity
APPLICATIONS
Pressure measurements
Temperature measurements
Strain measurements
Automotive diagnostics
GENERAL DESCRIPTION The AD8230 is a low drift, differential sampling, precision
instrumentation amplifier. Auto-zeroing reduces offset voltage
drift to less than 50 nV/°C. The AD8230 is well-suited for
thermocouple and bridge transducer applications. The
AD8230’s high CMR of 110 dB (min) rejects line noise in
measurements where the sensor is far from the instrumentation.
The 16 V rail-to-rail, common-mode input range is useful for
noisy environments where ground potentials vary by several
volts. Low frequency noise is kept to a minimal 3 µV p-p
making the AD8230 perfect for applications requiring the
utmost dc precision. Moreover, the AD8230 maintains its high
performance over the extended industrial temperature range of
−40°C to +125°C.
Two external resistors are used to program the gain. By using
matched external resistors, the gain stability of the AD8230 is
much higher than instrumentation amplifiers that use a single
resistor to set the gain. In addition to allowing users to program
the gain between 101 and 1000, users may adjust the output
offset voltage.
TEMPERATURE (°C)
OFFSET VOLTA
GE (
V R
–2.0Figure 1. Relative Offset Voltage vs. Temperature
VOUT
–5V
+5V
284Ω0.1µF
Figure 2. Thermocouple Measurement
The AD8230 is versatile yet simple to use. Its auto-zeroing
topology significantly minimizes the input and output
transients typical of commutating or chopper instrumentation
amplifiers. The AD8230 operates on ±4 V to ±8 V (+8 V to +16 V)
supplies and is available in an 8-lead SOIC.
1 The AD8230 can be programmed for a gain as low as 2, but the maximum
input voltage is limited to approximately 750 mV.
TABLE OF CONTENTS Specifications.....................................................................................3
Absolute Maximum Ratings............................................................5
ESD Caution..................................................................................5
Typical Performance Characteristics.............................................6
Theory of Operation......................................................................10
Setting the Gain..........................................................................10
Level-Shifting the Output..........................................................11
Source Impedance and Input Settling Time...........................11
Input Voltage Range...................................................................11
Input Protection.........................................................................11
Power Supply Bypassing............................................................11
Power Supply Bypassing for Multiple Channel Systems.......11
Layout..........................................................................................12
Applications................................................................................12
Outline Dimensions.......................................................................13
Ordering Guide..........................................................................13
REVISION HISTORY
10/04—Revision 0: Initial Version SPECIFICATIONS VS = ±5 V, VREF = 0 V, RF = 100 kΩ, RG = 1 kΩ (@ TA = 25°C, G = 202, RL = 10 kΩ, unless otherwise noted).
Table 1. 1 The AD8230 can operate as low as G = 2. However, since the differential input range is limited to approximately 750 mV, the AD8230 configured at G < 10 does not
make use of the full output voltage range.
2 Differential source resistance less than 10 kΩ does not result in voltage offset due to input bias current or mismatched series resistors.
VS = ±8 V, VREF = 0 V, RF = 100 kΩ, RG = 1 kΩ (@ TA = 25°C, G = 202, RL = 10 kΩ, unless otherwise noted).
Table 2. The AD8230 can operate as low as G = 2. However, since the differential input range is limited to approximately 750 mV, the AD8230 configured at G < 10 does not
make use of the full output voltage range. Differential source resistance less than 10 kΩ does not result in voltage offset due to input bias current or mismatched series resistors.
ABSOLUTE MAXIMUM RATINGS
Table 3. Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions may affect device reliability.
Specification is for device in free air: SOIC: θJA (4-layer JEDEC
board) = 121°C/W.
CONNECTION DIAGRAM
–VSVOUT
VREF2
–IN
(Not to Scale)
+VS
VREF1
+INFigure 3.
ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
this product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recom-
mended to avoid performance degradation or loss of functionality.
TYPICAL PERFORMANCE CHARACTERISTICS OFFSET VOLTAGE (µV RTI)–9–3–6036
LES
100
Figure 4. Offset Voltage (RTI) Distribution at ±5 V, CM = 0 V, TA = +25°C
OFFSET VOLTAGE DRIFT (nV/°C)–50–30–101030
LES
Figure 5. Offset Voltage (RTI) Drift Distribution
TEMPERATURE (°C)
OFFSET VOLTA
GE (
V R
–18Figure 6. Offset Voltage (RTI) vs. Temperature
COMMON-MODE VOLTAGE (V)
OFFSET VOLTAGE (
V R–100–6–4246
Figure 7. Offset Voltage (RTI) vs. Common-Mode Voltage, VS = ±5 V
COMMON-MODE VOLTAGE (V)
OFFSET VOLTAGE (
V R–10–8–6–4–20246810
Figure 8. Offset Voltage (RTI) vs. Common-Mode Voltage, VS = ±8 V
SOURCE IMPEDANCE (kΩ)
OFFSET VOLTA
GE (05063-009
–801456Figure 9. Offset Voltage (RTI) vs. Source Impedance, 1 µF Across Input Pins
VREF (V)
OFFSET VOLTA
GE (
V R–0.50–1.5–1.00.51.01.5
Figure 10. Offset Voltage (RTI) vs. Reference Voltage
FREQUENCY (Hz)
CMR (dB)
130Figure 11. Common-Mode Rejection vs. Frequency
SOURCE IMPEDANCE (kΩ)
CMR (dB)110
130Figure 12. Common-Mode Rejection vs.
Source Impedance, 1.1 µF Across Input Pins
TEMPERATURE (°C)
CLOCK FRE
NCY
(Hz)5.4k
5.6k
5.8k
6.0k
6.2k
6.4k
6.6k
6.8kFigure 13. Clock Frequency vs. Temperature
COMMON-MODE VOLTAGE (V)
RAGE
INP
T BIAS
CURRE
NT (–1.0
1.0Figure 14. Average Input Bias Current vs. Common-Mode Voltage
−40°C, +25°C, +85°C, +125°C
TEMPERATURE (°C)
ITIV
CURRE
NT (mA)2.5
3.5Figure 15. Supply Current vs. Temperature
100101k10k100k
FREQUENCY (Hz)
GAIN (05063-014
–10Figure 16. Gain vs. Frequency, G = 2
100101k10k100k
FREQUENCY (Hz)
GAIN (05063-015
–10Figure 17. Gain vs. Frequency, G = 10
VOUT (V)
NONLINE
ARITY
(ppm)–10–4–3–2–1012345
Figure 18. Gain Nonlinearity, G = 20
100101k10k100k
FREQUENCY (Hz)
GAIN (05063-016
–10Figure 19. Gain vs. Frequency, G = 100
100101k10k100k
FREQUENCY (Hz)
GAIN (Figure 20. Gain vs. Frequency, G = 1000
SOURCE IMPEDANCE (kΩ)
GAIN E
RROR (%)–0.010
0.010Figure 21. Gain Error vs. Differential Source Impedance
