AD822ARM ,18V; single supply, rail to rail low power FET-input Op Amp. For battery-powered precision instrumentation, photodiode preamps, active filters, 12/14-bit data acquisition systemsAPPLICATIONS per amplifier. The AD822 drives up to 350 pF of direct capacitiveBattery-Powered Preci ..
AD822BN ,Single Supply, Rail-to-Rail Low Power FET-Input Op AmpSPECIFICATIONS (V = 0, 5 volts @ T = +258C, V = 0 V, V = 0.2 V unless otherwise noted)S A CM OUT1AD ..
AD822BN ,Single Supply, Rail-to-Rail Low Power FET-Input Op AmpCHARACTERISTICS3Output Saturation VoltageV –V I = 20 μA 575757mVOL EE SINKT to T 10 10 mVMIN MAXV – ..
AD822BR ,Single Supply, Rail-to-Rail Low Power FET-Input Op AmpSPECIFICATIONS (V = 0, 5 volts @ T = +258C, V = 0 V, V = 0.2 V unless otherwise noted)S A CM OUT1AD ..
AD822BRZ-REEL , Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp
AD822BRZ-REEL , Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp
ADP3110 ,Dual Bootstrapped, 12 V MOSFET DriverMaximum Ratings ...... 4 Application Information ....8 ESD Caution . 4 Supply Capacitor Selection . ..
ADP3110A ,Dual Bootstrapped, 12 V MOSFET DriverELECTRICAL CHARACTERISTICS (Note 4) (V = 12 V, T = 0°C to +85°C, T = 0°C to +125°C unless otherwise ..
ADP3118 ,Dual Bootstrapped 12 V MOSFET DriverMaximum Ratings ......4 MOSFET Selection ......10 ESD Caution .4 High-Side (Control) MOSFETs ...10 ..
ADP3118JRZ-RL , Dual Bootstrapped 12 V MOSFET Driver with Output Disable
ADP3120A ,Dual Bootstrapped, 12 V MOSFET Driver with Output DisableELECTRICAL CHARACTERISTICS (Note 4) (V = 12 V, T = ï 20°C to +85°C, T = 0°C to +125°C unless otherw ..
ADP3120JRZ , Dual Bootstrapped 12 V MOSFET Driver with Output Disable
AD822ARM
18V; single supply, rail to rail low power FET-input Op Amp. For battery-powered precision instrumentation, photodiode preamps, active filters, 12/14-bit data acquisition systems
CONNECTION DIAGRAM
8-Lead Plastic DIP, MSOP, and SOICSingle Supply, Rail-to-Rail
Low Power FET-Input Op Amp
FEATURES
True Single Supply Operation
Output Swings Rail to Rail
Input Voltage Range Extends below Ground
Single Supply Capability from 3 V to 36 V
Dual Supply Capability from �1.5 V to �18 V
High Load Drive
Capacitive Load Drive of 350 pF, G = +1
Minimum Output Current of 15 mA
Excellent AC Performance for Low Power
800 mA Max Quiescent Current per Amplifier
Unity Gain Bandwidth: 1.8 MHz
Slew Rate of 3.0 V/ms
Good DC Performance
800 mV Max Input Offset Voltage
2 mV/�C Typ Offset Voltage Drift
25 pA Max Input Bias Current
Low Noise
13 nV/√Hz @ 10 kHz
No Phase Inversion
APPLICATIONS
Battery-Powered Precision Instrumentation
Photodiode Preamps
Active Filters
12- to 14-Bit Data Acquisition Systems
Medical Instrumentation
Low Power References and Regulators
PRODUCT DESCRIPTIONThe AD822 is a dual precision, low power FET input op amp
that can operate from a single supply of 3.0 V to 36 V, or dual
supplies of ±1.5 V to ±18 V. It has true single supply capability
with an input voltage range extending below the negative rail,
allowing the AD822 to accommodate input signals below ground
in the single supply mode. Output voltage swing extends to
within 10 mV of each rail providing the maximum output
dynamic range.
Offset voltage of 800 µV max, offset voltage drift of 2 µV/°C,
input bias currents below 25 pA and low input voltage noise
provide dc precision with source impedances up to a Gigaohm.
1.8 MHz unity gain bandwidth, –93 dB THD at 10 kHz and
3 V/µs slew rate are provided with a low supply current of 800 µA
per amplifier. The AD822 drives up to 350 pF of direct capacitive
load as a follower, and provides a minimum output current of
15 mA. This allows the amplifier to handle a wide range of load
conditions. This combination of ac and dc performance, plus
the outstanding load drive capability, results in an exceptionally
versatile amplifier for the single supply user.
The AD822 is available in two performance grades. The A and
B grades are rated over the industrial temperature range of –40°C
to +85°C.
The AD822 is offered in three varieties of 8-lead package:
Plastic DIP, MSOP, and SOIC.
Figure 2.Gain-of-2 Amplifier; VS = 5, 0, VIN = 2.5 V Sine
Centered at 1.25 V, RL = 100 kΩ
Figure 1.Input Voltage Noise vs. Frequency
REV.B
AD822–SPECIFICATIONS(VS = 0, 5 V @ TA = 25�C, VCM = 0 V, VOUT = 0.2 V unless otherwise noted.)
(VS = �5 V @ TA = 25�C, VCM = 0 V, VOUT = 0 V unless otherwise noted.)DYNAMIC PERFORMANCE
MATCHING CHARACTERISTICS
AD822
DYNAMIC PERFORMANCE
MATCHING CHARACTERISTICS
TIONS(VS = �15 V @ TA = 25�C, VCM = 0 V, VOUT = 0 V unless otherwise noted.)
AD822
(VS = 0, 3 V @ TA = 25�C, VCM = 0 V, VOUT = 0.2 V unless otherwise noted.)
MATCHING CHARACTERISTICS
NOTESSee standard military drawing for 883B specifications.This is a functional specification. Amplifier bandwidth decreases when the input common-mode voltage is driven in the range (+VS – 1 V) to +VS.
Common-mode error voltage is typically less than 5 mV with the common-mode voltage set at 1 volt below the positive supply.VOL–VEE is defined as the difference between the lowest possible output voltage (VOL) and the minus voltage supply rail (VEE).
VCC–VOH is defined as the difference between the highest possible output voltage (VOH) and the positive supply voltage (VCC).
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Internal Power Dissipation
Plastic DIP (N) . . . . . . . . . . . . . . Observe Derating Curves
SOIC (R) . . . . . . . . . . . . . . . . . . . Observe Derating Curves
Input Voltage . . . . . . . . . . . . . . (+VS + 0.2 V) to –(20 V + VS)
Output Short Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±30 V
Storage Temperature Range (N) . . . . . . . . . –65°C to +125°C
Storage Temperature Range (R, RM) . . . . . –65°C to +150°C
Operating Temperature Range
AD822A/B . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . 260°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.8-Lead Plastic DIP Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 160°C/W
8-Lead MSOP Package: θJA = 190°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD822
is limited by the associated rise in junction temperature. For plastic
packages, the maximum safe junction temperature is 145°C. If
these maximums are exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated” condition for
an extended period can result in device burnout. To ensure
proper operation, it is important to observe the derating curves
shown in TPC 24.
While the AD822 is internally short circuit protected, this may not
be sufficient to guarantee that the maximum junction temperature
is not exceeded under all conditions. With power supplies ±12 V
(or less) at an ambient temperature of 25°C or less, if the output
node is shorted to a supply rail, then the amplifier will not be
destroyed, even if this condition persists for an extended period.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD822 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
AD822AN
AD822AR
*SPICE model is available at .
TPC 1.Typical Distribution of Offset Voltage (390 Units)
TPC 2.Typical Distribution of Offset Voltage Drift
(100 Units)
TPC 3.Typical Distribution of Input Bias Current
(213 Units)
TPC 4.Input Bias Current vs. Common-Mode Voltage;
VS = 5V, 0 V and VS = ±5V
TPC 5.Input Bias Current vs. Common-Mode Voltage;
VS = ±15 V
TPC 6.Input Bias Current vs. Temperature; VS = 5 V,
VCM = 0
AD822
TPC 7.Open-Loop Gain vs. Load Resistance
TPC 8.Open-Loop Gain vs. Temperature
TPC 9.Input Error Voltage vs. Output Voltage for
TPC 10.Input Error Voltage with Output Voltage within
300mV of Either Supply Rail for Various Resistive Loads;
VS = ±5V
TPC 11.Input Voltage Noise vs. Frequency
TPC 12.Total Harmonic Distortion vs. Frequency
TPC 13.Open-Loop Gain and Phase Margin vs.
Frequency
TPC 14.Output Impedance vs. Frequency
TPC 15.Output Swing and Error vs. Settling Time
TPC 16.Common-Mode Rejection vs. Frequency
TPC 17.Absolute Common-Mode Error vs. Common-
Mode Voltage from Supply Rails (VS – VCM)
TPC 18.Output Saturation Voltage vs. Load Current
AD822
TPC 19.Output Saturation Voltage vs. Temperature
TPC 20.Short Circuit Current Limit vs. Temperature
TPC 21.Quiescent Current vs. Supply Voltage vs.
Temperature
TPC 22.Power Supply Rejection vs. Frequency
TPC 23.Large Signal Frequency Response
TPC 24.Maximum Power Dissipation vs. Temperature for
Plastic Packages
