AD822BR ,Single Supply, Rail-to-Rail Low Power FET-Input Op AmpSPECIFICATIONS (V = 0, 5 volts @ T = +258C, V = 0 V, V = 0.2 V unless otherwise noted)S A CM OUT1AD ..
AD822BRZ-REEL , Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp
AD822BRZ-REEL , Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp
AD823 ,Dual, 16 MHz, Rail-to-Rail FET Input AmplifierAPPLICATIONSBattery Powered Precision InstrumentationPhotodiode PreampsActive Filters12- to 16-Bit ..
AD8230YRZ ,16V Zero-Drift Auto-Zero Instrumentation Amplifierapplications requiring the amplifiers. The AD8230 operates on ±4 V to ±8 V (+8 V to +16 V) utmost ..
AD823AARZ , Wide Supply Dual, 17 MHz, Rail-to-Rail
ADP3118 ,Dual Bootstrapped 12 V MOSFET DriverMaximum Ratings ......4 MOSFET Selection ......10 ESD Caution .4 High-Side (Control) MOSFETs ...10 ..
ADP3118JRZ-RL , Dual Bootstrapped 12 V MOSFET Driver with Output Disable
ADP3120A ,Dual Bootstrapped, 12 V MOSFET Driver with Output DisableELECTRICAL CHARACTERISTICS (Note 4) (V = 12 V, T = ï 20°C to +85°C, T = 0°C to +125°C unless otherw ..
ADP3120JRZ , Dual Bootstrapped 12 V MOSFET Driver with Output Disable
ADP3120JRZ-RL , Dual Bootstrapped 12 V MOSFET Driver with Output Disable
ADP3121JCPZ-RL , Dual Bootstrapped, 12 V MOSFET Driver with Output Disable
AD822AN-AD822AN-3V-AD822AR-AD822AR-3V-AD822BN-AD822BR
Single Supply, Rail-to-Rail Low Power FET-Input Op Amp
CONNECTION DIAGRAM
8-Pin Plastic DIP, Cerdip and SOICREV.A
Single Supply, Rail-to-Rail
Low Power FET-Input Op Amp
FEATURES
TRUE SINGLE SUPPLY OPERATION
Output Swings Rail to Rail
Input Voltage Range Extends Below Ground
Single Supply Capability from +3 V to +36 V
Dual Supply Capability from 61.5 V to 618 V
HIGH LOAD DRIVE
Capacitive Load Drive of 350 pF, G = 1
Minimum Output Current of 15 mA
EXCELLENT AC PERFORMANCE FOR LOW POWER
800 mA Max Quiescent Current per Amplifier
Unity Gain Bandwidth: 1.8 MHz
Slew Rate of 3.0 V/ms
GOOD DC PERFORMANCE
800 mV Max Input Offset Voltage
2 mV/8C Typ Offset Voltage Drift
25 pA Max Input Bias Current
LOW NOISE
13 nV/√Hz @ 10 kHz
NO PHASE INVERSION
APPLICATIONS
Battery Powered Precision Instrumentation
Photodiode Preamps
Active Filters
12- to 14-Bit Data Acquisition Systems
Medical Instrumentation
Low Power References and Regulators
PRODUCT DESCRIPTIONThe AD822 is a dual precision, low power FET input op
amp that can operate from a single supply of +3.0 V to 36 V,
or dual supplies of ±1.5 V to ±18 V. It has true single supply
capability with an input voltage range extending below the
negative rail, allowing the AD822 to accommodate input signals
below ground in the single supply mode. Output voltage swing
extends to within 10 mV of each rail providing the maximum
output dynamic range.
Offset voltage of 800 μV max, offset voltage drift of 2 μV/°C,
input bias currents below 25 pA and low input voltage noise
provide dc precision with source impedances up to a Gigaohm.
1.8 MHz unity gain bandwidth, –93 dB THD at 10 kHz and
3 V/μs slew rate are provided with a low supply current of
800 μA per amplifier. The AD822 drives up to 350 pF of direct
capacitive load as a follower, and provides a minimum output
current of 15 mA. This allows the amplifier to handle a wide
range of load conditions. This combination of ac and dc
performance, plus the outstanding load drive capability, results
in an exceptionally versatile amplifier for the single supply user.
The AD822 is available in four performance grades. The A and
B grades are rated over the industrial temperature range of
–40°C to +85°C. There is also a 3 volt grade—the AD822A-3V,
rated over the industrial temperature range. The mil grade is
rated over the military temperature range of –55°C to +125°C
and is available processed on standard military drawing.
The AD822 is offered in three varieties of 8-pin package: plastic
DIP, hermetic cerdip and surface mount (SOIC) as well as die
form.
VOUT
(GND)Gain of +2 Amplifier; VS = +5, 0, VIN = 2.5 V Sine Centered
at 1.25 Volts, RL = 100 kΩ
Input Voltage Noise vs. Frequency
10010010k1k
INPUT VOLTAGE NOISE – nV/
FREQUENCY – Hz
AD822–SPECIFICATIONS(VS = 0, 5 volts @ TA = +258C, VCM = 0 V, VOUT = 0.2 V unless otherwise noted)
(VS = 65 volts @ TA = +258C, VCM = 0 V, VOUT = 0 V unless otherwise noted)MATCHING CHARACTERISTICS
OUTPUT CHARACTERISTICS
AD822
MATCHING CHARACTERISTICS
OUTPUT CHARACTERISTICS
TIONS(VS = 615 volts @ TA = +258C, VCM = 0 V, VOUT = 0 V unless otherwise noted)
AD822
(VS = 0, 3 volts @ TA = +258C, VCM = 0 V, VOUT = 0.2 V unless otherwise noted)
NOTESSee standard military drawing for 883B specifications.This is a functional specification. Amplifier bandwidth decreases when the input common-mode voltage is driven in the range (+VS – 1 V) to +VS.
Common-mode error voltage is typically less than 5 mV with the common-mode voltage set at 1 volt below the positive supply.VOL–VEE is defined as the difference between the lowest possible output voltage (VOL) and the minus voltage supply rail (VEE).
VCC–VOH is defined as the difference between the highest possible output voltage (VOH) and the positive supply voltage (VCC).
Specifications subject to change without notice.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD822 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V
Internal Power Dissipation
Plastic DIP (N) . . . . . . . . . . . . . .Observe Derating Curves
Cerdip (Q) . . . . . . . . . . . . . . . . . .Observe Derating Curves
SOIC (R) . . . . . . . . . . . . . . . . . . .Observe Derating Curves
Input Voltage . . . . . . . . . . . . . .(+VS + 0.2 V) to –(20 V + VS)
Output Short Circuit Duration . . . . . . . . . . . . . . . .Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .±30 V
Storage Temperature Range (N) . . . . . . . . .–65°C to +125°C
Storage Temperature Range (Q) . . . . . . . . .–65°C to +150°C
Storage Temperature Range (R) . . . . . . . . .–65°C to +150°C
Operating Temperature Range
AD822A/B . . . . . . . . . . . . . . . . . . . . . . . . .–40°C to +85°C
AD822S . . . . . . . . . . . . . . . . . . . . . . . . . .–55°C to +125°C
Lead Temperature Range (Soldering 60 sec) . . . . . . .+260°C
NOTESStresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.8-Pin Plastic DIP Package: θJA = 90°C/Watt
8-Pin Cerdip Package: θJA = 110°C/Watt
8-Pin SOIC Package: θJA = 160°C/Watt
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD822 is
limited by the associated rise in junction temperature. For plastic
packages, the maximum safe junction temperature is 145°C. For
the cerdip packages, the maximum junction temperature is 175°C.
If these maximums are exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated” condition for
an extended period can result in device burnout. To ensure
proper operation, it is important to observe the derating curves
shown in Figure 24.
While the AD822 is internally short circuit protected, this may not
be sufficient to guarantee that the maximum junction temperature
is not exceeded under all conditions. With power supplies ±12
volts (or less) at an ambient temperature of +25°C or less, if the
output node is shorted to a supply rail, then the amplifier will not
be destroyed, even if this condition persists for an extended period.
ORDERING GUIDE
NOTESSpice model is available on ADI Model Disc.Contact factory for availability.
METALIZATION PHOTOGRAPH
Contact factory for latest dimensions.
Dimensions shown in inches and (mm).
OFFSET VOLTAGE – mV
NUMBER OF UNITS60
Figure 1.Typical Distribution of Offset Voltage (390 Units)
OFFSET VOLTAGE DRIFT – mV/°C
% IN BIN
–10–126420–2–4–6–8
Figure 2.Typical Distribution of Offset Voltage Drift
(100 Units)8765432
INPUT BIAS CURRENT – pA
NUMBER OF UNITS
Figure 3.Typical Distribution of Input Bias Current
(213 Units)
INPUT BIAS CURRENT – pA–4543210–1–2–3
COMMON-MODE VOLTAGE – V
Figure 4.Input Bias Current vs. Common-Mode Voltage;
VS = +5V, 0 V and VS = ±5V
Figure 5.
VS = ±15 V
Figure 6.
VCM = 0
10M
100k
10k
1001k100k10k
LOAD RESISTANCE – W
OPEN-LOOP GAIN – V/V
Figure 7.Open-Loop Gain vs. Load Resistance
10M
100k
10k
TEMPERATURE – °C
OPEN-LOOP GAIN – V/V
Figure 8.Open-Loop Gain vs. Temperature
OUTPUT VOLTAGE – V
INPUT VOLTAGE –
Figure 9.Input Error Voltage vs. Output Voltage for
Resistive Loads
AD822–Typical Characteristics
OUTPUT VOLTAGE FROM SUPPLY RAILS – mV
INPUT VOLTAGE –
Figure 10.Input Error Voltage with Output Voltage within
300mV of Either Supply Rail for Various Resistive Loads;
VS = ±5V
10010k1k1001
FREQUENCY – Hz
INPUT VOLTAGE NOISE – nV/
Figure 11.Input Voltage Noise vs. Frequency
1001k100k10k
FREQUENCY – Hz
THD – dB
Figure 12.Total Harmonic Distortion vs. Frequency
