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AD8221AR-AD8221ARM-AD8221ARM-REEL7-AD8221ARMZ-AD8221ARMZ-R7-AD8221AR-REEL-AD8221AR-REEL7-AD8221ARZ-AD8221ARZ-R7-AD8221BR-AD8221BRZ-AD8221BRZ-R7
Precision Instrumentation Amplifier with High CMRR Over Frequency
Precision Instrumentation AmplifierRev. A
FEATURES
Available in space-saving MSOP package
Gain set with 1 external resistor (gain range 1 to 1000)
Wide power supply range: ±2.3 V to ±18 V
Temperature range for specified performance:
–40°C to +85°C
Operational up to 125°C1
EXCELLENT AC SPECIFICATONS
80 dB min CMRR to 10 kHz ( G = 1)
825 kHz –3 dB bandwidth (G = 1)
2 V/µs slew rate
LOW NOISE
8 nV/√Hz, @ 1 kHz, max input voltage noise
0.25 µV p-p input noise (0.1 Hz to 10 Hz)
HIGH ACCURACY DC PERFORMANCE (AD8221BR)
90 dB min CMRR (G = 1)
25 µV max input offset voltage
0.3 µV/°C max input offset drift
0.4 nA max input bias current
APPLICATIONS
Weigh scales
Industrial process controls
Bridge amplifiers
Precision data acquisition systems
Medical instrumentation
Strain gages
Transducer interfaces
GENERAL DESCRIPTION The AD8221 is a gain programmable, high performance instru-
mentation amplifier that delivers the industry’s highest CMRR
over frequency. The CMRR of instrumentation amplifiers on
the market today falls off at 200 Hz. In contrast, the AD8221
maintains a minimum CMRR of 80 dB to 10 kHz for all grades
at G = 1. High CMRR over frequency allows the AD8221 to
reject wideband interference and line harmonics, greatly
simplifying filter requirements. Possible applications include
precision data acquisition, biomedical analysis, and aerospace
instrumentation.
Low voltage offset, low offset drift, low gain drift, high gain
accuracy, and high CMRR make this part an excellent choice in
applications that demand the best dc performance possible,
such as bridge signal conditioning.
CONNECTION DIAGRAM
–IN
+VS
VOUT
REF
–VS
03149-0-001 Figure 1. SOIC and MSOP Connection Diagram
CMRR (dB)
FREQUENCY (Hz)
100101k10k100kFigure 2. Typical CMRR vs. Frequency for G = 1
Programmable gain affords the user design flexibility. A single
resistor sets the gain from 1 to 1000. The AD8221 operates on
both single and dual supplies, and is well suited for applications
where ±10 V input voltages are encountered.
The AD8221 is available in low cost 8-lead SOIC and MSOP
packages, both of which offer the industry’s best performance.
The MSOP requires half the board space of the SOIC, making it
ideal for multichannel or space-constrained applications.
Performance is specified over the entire industrial temperature
range of –40°C to +85°C for all grades. Furthermore, the
AD8221 is operational from –40°C to +125°C1.
1 See Typical Performance Curves for expected operation from 85°C to 125°C.
TABLE OF CONTENTS Specifications.....................................................................................3
Absolute Maximum Ratings............................................................5
ESD Caution..................................................................................5
Typical Performance Characteristics.............................................6
Theory of Operation......................................................................13
Gain Selection.............................................................................14
Layout...........................................................................................14
Reference Terminal....................................................................15
Power Supply Regulation and Bypassing................................15
Input Bias Current Return Path................................................15
Input Protection.........................................................................15
RF Interference...........................................................................16
Precision Strain Gage.................................................................16
Conditioning ±10 V Signals for a +5 V Differential Input
ADC.............................................................................................17
AC-Coupled Instrumentation Amplifier................................17
Outline Dimensions.......................................................................18
Ordering Guide..........................................................................18
REVISION HISTORY
Revision A
11/03—Data Sheet Changed from Rev. 0 to Rev. A
Change Page Changes to Features...............................................................................1
Changes to Specifications section.......................................................4
Change to Theory of Operation section...........................................13
Change to Gain Selection section......................................................14
SPECIFICATIONS
Table 1. VS = ±15 V, VREF = 0 V, TA = +25°C, G = 1, RL = 2 kΩ, unless otherwise noted
Total RTI VOS = (VOSI) + (VOSO/G).
2 Does not include the effects of external resistor RG.
3 One input grounded. G = 1. See Typical Performance Curves for expected operation between 85°C to 125°C.
ABSOLUTE MAXIMUM RATINGS
Table 2. AD8221 Absolute Maximum Ratings *Temperature range for specified performance is –40°C to +85°C. See Typical
Performance Curves for expected operation from +85°C to +125°C.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions may affect device reliability.
Specification is for device in free air:
SOIC θJA (4 Layer JEDEC Board) = 121°C/W.
MSOP θJA (4 Layer JEDEC Board) = 135°C/W.
ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumu-
late on the human body and test equipment and can discharge without detection. Although this
product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recom-
mended to avoid performance degradation or loss of functionality.
TYPICAL PERFORMANCE CHARACTERISTICS
(@+25°C, VS = ±15 V, RL = 10 kΩ, unless otherwise noted.)
UNITS
CMR (µV/V)
03149-0-003 Figure 3. Typical Distribution for CMR (G = 1)
UNITS
INPUT OFFSET VOLTAGE (µV)
03149-0-004 Figure 4. Typical Distribution of Input Offset Voltage
UNITS–0.5–1.0–1.50.51.01.5
INPUT BIAS CURRENT (nA)
03149-0-005
UNITS–0.3–0.6–0.90.30.60.9
INPUT OFFSET CURRENT (nA)
03149-0-006 Figure 6. Typical Distribution of Input Offset Current
INP
T COMMON-MODE
LTAGE
(V0–15–1051015
OUTPUT VOLTAGE (V)
03149-0-007Figure 7. Input Common-Mode Range vs. Output Voltage, G = 1
INP
T COMMON-MODE
LTAGE
(V0–15–1051015
OUTPUT VOLTAGE (V)
03149-0-008INP
T BIAS
CURRE
NT (nA)
COMMON-MODE VOLTAGE (V)
03149-0-009Figure 9. IBIAS vs. CMV
CHANGE
IN INP
T OFFS
LTAGE
WARM-UP TIME (min)
03149-0-010 Figure 10. Change in Input Offset Voltage vs. Warm-Up Time
INP
T CURRE
NT (nA)
TEMPERATURE (°C)
03149-0-011Figure 11. Input Bias Current and Offset Current vs. Temperature
RR (dB)
0.11101001k10k100k1M
FREQUENCY (Hz)
03149-0-012Figure 12. Positive PSRR vs. Frequency, RTI (G = 1 to 1000)
RR (dB)
0.11101001k10k100k1M
FREQUENCY (Hz)
03149-0-013Figure 13. Negative PSRR vs. Frequency, RTI (G = 1 to 1000)
TOTAL DRIFT 25
C RTI (
10k
100k10k10100100k1M10M
SOURCE RESISTANCE (Ω)
03149-0-014Figure 14. Total Drift vs. Source Resistance
1001k10k100k1M10M
FREQUENCY (Hz)
GAIN (
03149-0-015Figure 15. Gain vs. Frequency
CMRR (dB)
0.11101001k10k100k1M
FREQUENCY (Hz)
03149-0-016Figure 16. CMRR vs. Frequency, RTI
CMRR (dB)
0.11101001k10k100k1M
FREQUENCY (Hz)
03149-0-017Figure 17. CMRR vs. Frequency, RTI, 1 kΩ Source Imbalance
CMR (
V/V)
TEMPERATURE (°C)
03149-0-041 Figure 18. CMR vs. Temperature
–VS+0.0
+0.4
+0.8
+1.2
+1.6
+2.0
+2.4
+VS–0.0
INPUT VOLTAGE LIMIT (V)
FER
TO SU
PPLY VOLTA
GES
± SUPPLY VOLTAGE (V)01015
03149-0-018Figure 19. Input Voltage Limit vs. Supply Voltage, G = 1
–VS+0.0
+0.4
+0.8
+1.2
+1.6
+2.0
+VS–0.0
OUTPUT VOLTAGE SW
ING (V)
FER
TO SU
PPLY VOLTA
GES
± SUPPLY VOLTAGE (V)01015
03149-0-019Figure 20. Output Voltage Swing vs. Supply Voltage, G = 1
OUTPUT VOLTAGE SW
ING (V p-p)
LOAD RESISTANCE (Ω)11001k10k
03149-0-020Figure 21. Output Voltage Swing vs. Load Resistance
–VS+0
+VS–0
OUTPUT VOLTAGE SW
ING (
RRE
D TO S
LTAGE
OUTPUT CURRENT (mA)
03149-0-021Figure 22. Output Voltage Swing vs. Output Current, G = 1
RROR (1
ppm/DIV
OUTPUT VOLTAGE (V) Figure 23. Gain Nonlinearity, G = 1, RL = 10 kΩ
ROR (1
pm/DIV
OUTPUT VOLTAGE (V) Figure 24. Gain Nonlinearity, G = 100, RL = 10 kΩ
100ppm/D
IV)
OUTPUT VOLTAGE (V) Figure 25. Gain Nonlinearity, G = 1000, RL = 10 kΩ
VOLTA
GE N
ISE R
I (
V/ H
100101001k10k100k
FREQUENCY (Hz)
03149-0-025Figure 26. Voltage Noise Spectral Density vs. Frequency (G = 1 to 1000)
03149-0-026 Figure 27. 0.1 Hz to 10 Hz RTI Voltage Noise (G = 1)
03149-0-027 Figure 28. 0.1 Hz to 10 Hz RTI Voltage Noise (G = 1000)
CURRE
NT NOIS
(fA/ Hz)
FREQUENCY (Hz)11001k10k
03149-0-028 Figure 29. Current Noise Spectral Density vs. Frequency
03149-0-029 Figure 30. 0.1 Hz to 10 Hz Current Noise
OUTPUT VOLTAGE (V p-p)
FREQUENCY (Hz)100k10k1M
03149-0-030Figure 31. Large Signal Frequency Response
03149-0-031Figure 32. Large Signal Pulse Response and Settling Time (G = 1), 0.002%/div
