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AD8206YRZ
Single-Supply 42V System Difference Amplifier
Single-Supply 42 V System
Difference Amplifier
Rev. PrA
FEATURES
Ideal for current shunt applications
High common-mode voltage range
−2 V to +65 V operating
−5 V to +68 V survival
Gain = 20
Wide operating temperature range
Die: −40°C to +150°C
8-lead SOIC: −40°C to +125°C
Adjustable offset
Available in SOIC and die form
EXCELLENT AC AND DC PERFORMANCE
15 µV/°C offset drift
30 ppm/°C gain drift
80 dB CMRR dc to 20 kHz
APPLICATIONS
High-side current sensing in:
Motor controls
Transmission controls
Diesel injection controls
Engine management
Suspension controls
Vehicle dynamic controls
DC-to-dc converters
FUNCTIONAL BLOCK DIAGRAM +IN
–IN
NC = NO CONNECTGND
OUT
VREF1
VREF2
Figure 1.
GENERAL DESCRIPTION The AD8206 is a single-supply difference amplifier for amplify-
ing small differential voltages in the presence of large common-
mode voltages. The operating input common-mode voltage
range extends from −2 V to +65 V. The typical single-supply
voltage is 5 V.
The AD8206 is offered in die and packaged form. The operating
temperature range for the die is 25°C higher (up to 150°C) than
the packaged part to enable the user to apply the AD8206 in
high temperature applications.
Excellent dc performance over temperature keeps errors in the
measurement loop to a minimum. Offset drift is typically less
than 15 µV/°C, and gain drift is typically below 30 ppm/°C.
The output offset can be adjusted from 0.05 V to 4.8 V with a
5 V supply by using the VREF1 and VREF2 pins. With VREF1 at-
tached to the V+ pin, and VREF2 attached to the GND pin, the
output is set at half scale. Attaching both pins to GND causes
the output to be unipolar, starting near ground. Attaching both
pins to V+ causes the output to be unipolar starting near V+.
Other offsets can be obtained by applying an external voltage to
the VREF1 and VREF2 pins.
TABLE OF CONTENTS Specifications.....................................................................................3
Absolute Maximum Ratings............................................................4
ESD Caution..................................................................................4
Pin Configuration and Function Descriptions.............................5
Typical Performance Characteristics.............................................6
Theory of Operation........................................................................8
Output Offset Adjustment...............................................................9
Unidirectional Operation............................................................9
Ground Referenced Output........................................................9
V+ Referenced Output.................................................................9
Bidirectional Operation................................................................9
External Reference Output........................................................10
Splitting the Supply....................................................................10
Splitting an External Reference................................................10
Applications.....................................................................................11
High-Side Current Sense with a Low-Side Switch.................11
High-Side Current Sense with a High-Side Switch...............11
Outline Dimensions.......................................................................12
Ordering Guide..........................................................................12
REVISION HISTORY 6/04—Revision 0: Initial Version
SPECIFICATIONS TA = Operating Temperature Range, VS = 5 V, unless otherwise noted.
Table 1. 1 Input voltage range = ±125 mV with half-scale offset. Source imbalance < 2 Ω.
3 The offset adjustment is ratiometric to the power supply when VREF1 and VREF2 are used as a divider between the supplies.
ABSOLUTE MAXIMUM RATINGS
Table 2. Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features pro-
prietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electro-
static discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or
loss of functionality.
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 04953-002
Figure 2. Metallization Diagram
NC = NO CONNECT
–IN
GND
VREF2
+IN
VREF1
OUT04953-003
Figure 3. Pin Configuration
Table 3. Pin Function Descriptions Die size is 1170 µm by 1280 µm.
Die thickness is 13 mil.
Minimum passivation opening (minimum bond pad size) is
92 µm × 92 µm.
Passivation type is 8KA USG (Oxide) + 10KA Oxynitride.
Bond pad metal composition is 98.5% Al, 1% Si, and 0.5% Cu.
Backside potential is V+.
TYPICAL PERFORMANCE CHARACTERISTICS Figure 4. Typical Offset Drift
Figure 5. CMR vs. Frequency
Figure 6. Gain Drift
Figure 7. Typical Small Signal Bandwidth (VOUT = 200 mV p-p)
Figure 8. Rise/Fall Time
Figure 9. Differential Overload Recovery (Falling)
