AD811 Fast Delivery |IC PHOENIX CO.,LIMITED

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AD811
High Performance Video Op Amp
High PerformanceVideo Op Amp
CONNECTION DIAGRAMSFEATURES
High Speed
140 MHz Bandwidth (3 dB, G = +1)
120 MHz Bandwidth (3 dB, G = +2)
35 MHz Bandwidth (0.1 dB, G = +2)
2500 V/ms Slew Rate
25 ns Settling Time to 0.1% (For a 2 V Step)
65 ns Settling Time to 0.01% (For a 10 V Step)
Excellent Video Performance (RL =150 V)
0.01% Differential Gain, 0.018 Differential Phase
Voltage Noise of 1.9 nV√Hz
Low Distortion: THD = –74 dB @ 10 MHz
Excellent DC Precision
3 mV max Input Offset Voltage
Flexible Operation
Specified for 65 V and 615 V Operation
62.3 V Output Swing into a 75 V Load (VS = 65 V)
APPLICATIONS
Video Crosspoint Switchers, Multimedia Broadcast
Systems
HDTV Compatible Systems
Video Line Drivers, Distribution Amplifiers
ADC/DAC Buffers
DC Restoration Circuits
Medical—Ultrasound, PET, Gamma and Counter
Applications
The AD811 is also excellent for pulsed applications where tran-
sient response is critical. It can achieve a maximum slew rate of
greater than 2500 V/ms with a settling time of less than 25 ns to
0.1% on a 2 volt step and 65 ns to 0.01% on a 10 volt step.
The AD811 is ideal as an ADC or DAC buffer in data acquisi-
tion systems due to its low distortion up to 10 MHz and its wide
unity gain bandwidth. Because the AD811 is a current feedback
amplifier, this bandwidth can be maintained over a wide range
of gains. The AD811 also offers low voltage and current noise of
1.9 nV/√Hz and 20 pA/√Hz, respectively, and excellent dc accu-
racy for wide dynamic range applications.
PRODUCT DESCRIPTION
The AD811 is a wideband current-feedback operational ampli-
fier, optimized for broadcast quality video systems. The –3 dB
bandwidth of 120 MHz at a gain of +2 and differential gain and
phase of 0.01% and 0.01° (RL = 150 W) make the AD811 an
excellent choice for all video systems. The AD811 is designed to
meet a stringent 0.1 dB gain flatness specification to a band-
width of 35 MHz (G = +2) in addition to the low differential
gain and phase errors. This performance is achieved whether
driving one or two back terminated 75 W cables, with a low
power supply current of 16.5 mA. Furthermore, the AD811 is
specified over a power supply range of –4.5 V to –18 V.
SUPPLY VOLTAGE – 6Volts
DIFFERENTIAL GAIN –
DIFFERENTIAL PHASE – Degrees
16-Lead SOIC (R-16) Package20-Lead SOIC (R-20) Package
+INNC
+VS
–IN
+IN
–VS
OUTPUT
NC = NO CONNECT
–IN
–VS
+VS
OUTPUT
NC = NO CONNECT
20-Lead LCC (E-20A) Package
REV. D
8-Lead Plastic (N-8)
Cerdip (Q-8)
SOIC (SO-8) Packages
NOTESThe AD811JR is specified with –5 V power supplies only, with operation up to –12 volts.
AD811–SPECIFICATIONS(@ TA = +258C and VS = 615 V dc, RLOAD = 150 W unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–18 V
AD811JR Grade Only . . . . . . . . . . . . . . . . . . . . . . . . .–12 V
Internal Power Dissipation2 . . . . . . . .Observe Derating Curves
Output Short Circuit Duration . . . . .Observe Derating Curves
Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . .–VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . .–6 V
Storage Temperature Range (Q, E) . . . . . . . .–65°C to +150°C
Storage Temperature Range (N, R) . . . . . . . .–65°C to +125°C
Operating Temperature Range
AD811J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0°C to +70°C
AD811A . . . . . . . . . . . . . . . . . . . . . . . . . . . .–40°C to +85°C
AD811S . . . . . . . . . . . . . . . . . . . . . . . . . . .–55°C to +125°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . .+300°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.8-Lead Plastic Package: qJA = 90°C/W
8-Lead Cerdip Package: qJA = 110°C/W
8-Lead SOIC Package: qJA = 155°C/W
16-Lead SOIC Package: qJA = 85°C/W
20-Lead SOIC Package: qJA = 80°C/W
20-Lead LCC Package: qJA = 70°C/W
ORDERING GUIDE
AD811SQ/883B
5962-9313101MPA
AD811SE/883B
5962-9313101M2A
AD811JR-REEL
AD811JR-REEL7
AD811AR-16-REEL
AD811AR-16-REEL7
AD811AR-20-REEL
AD811ACHIPS
*E = Ceramic Leadless Chip Carrier; N = Plastic DIP; Q = Cerdip; SO (R) =
Small Outline IC (SOIC).
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD811 is limited by the associated rise in junction temperature.
For the plastic packages, the maximum safe junction tempera-
ture is +145°C. For the cerdip and LCC packages, the maxi-
mum junction temperature is +175°C. If these maximums are
exceeded momentarily, proper circuit operation will be restored
as soon as the die temperature is reduced. Leaving the device in
the “overheated” condition for an extended period can result in
device burnout. To ensure proper operation, it is important to
observe the derating curves in Figures 17 and 18.
While the AD811 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature is not exceeded under all conditions. One important
example is when the amplifier is driving a reverse terminated
75 W cable and the cable’s far end is shorted to a power supply.
With power supplies of –12 volts (or less) at an ambient tem-
perature of +25°C or less, if the cable is shorted to a supply rail,
then the amplifier will not be destroyed, even if this condition
persists for an extended period.
ESD SUSCEPTIBILITY
ESD (electrostatic discharge) sensitive device. Electrostatic
charges as high as 4000 volts, which readily accumulate on the
human body and on test equipment, can discharge without
detection. Although the AD811 features proprietary ESD pro-
tection circuitry, permanent damage may still occur on these
devices if they are subjected to high energy electrostatic dis-
charges. Therefore, proper ESD precautions are recommended
to avoid any performance degradation or loss of functionality.
METALIZATION PHOTOGRAPH
Contact Factory for Latest Dimensions.
Dimensions Shown in Inches and (mm).
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD811 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
AD811–Typical Performance Characteristics
SUPPLY VOLTAGE – 6Volts
COMMON-MODE VOLTAGE RANGE –
VoltsTA = +258C
Figure 1.Input Common-Mode Voltage Range vs. Supply
10k
LOAD RESISTANCE – V
OUTPUT VOLTAGE – Volts p–p
Figure 2.Output Voltage Swing vs. Resistive Load
JUNCTION TEMPERATURE – 8C
INPUT BIAS CURRENT –
Figure 3.Input Bias Current vs. Junction Temperature
SUPPLY VOLTAGE – 6 Volts
MAGNITUDE OF THE OUTPUT VOLTAGE –
Volts
Figure 4.Output Voltage Swing vs. Supply
JUNCTION TEMPERATURE – 8C
QUIESCENT SUPPLY CURRENT – mA
Figure 5.Quiescent Supply Current vs. Junction
Temperature
JUNCTION TEMPERATURE – 8C
INPUT OFFSET VOLTAGE – mV
Figure 6.Input Offset Voltage vs. Junction Temperature
JUNCTION TEMPERATURE – 8C
SHORT CIRCUIT CURRENT – mA
Figure 7.Short Circuit Current vs. Junction Temperature
10k100M
100k10M1M
FREQUENCY – Hz
CLOSED-LOOP OUTPUT RESISTANCE –
Figure 8.Closed-Loop Output Resistance vs. Frequency
1.6k
1.4k1.2k1.0k800
VALUE OF FEEDBACK RESISTOR (RFB) – V
RISETIME – ns
OVERSHOOT – %
Figure 9.Rise Time and Overshoot vs. Value of
Feedback Resistor, RFB
JUNCTION TEMPERATURE – 8C
TRANSRESISTANCE – M
Figure 10.Transresistance vs. Junction Temperature
FREQUENCY – Hz
NOISE VOLTAGE – nV/ Hz
NOISE CURRENT – pA/ Hz
100100k10k1k
Figure 11.Input Noise vs. Frequency
Figure 12.3 dB Bandwidth and Peaking vs. Value of RFB
AD811
Figure 13.Common-Mode Rejection vs. Frequency
10M100k10k
PSRR – dB
FREQUENCY – Hz
Figure 14.Power Supply Rejection vs. Frequency
AMBIENT TEMPERATURE – 8C
TOTAL POWER DISSIPATION – Watts
Figure 15.Maximum Power Dissipation vs. Temperature
for Plastic Packages
100k1M100M10M
OUTPUT VOLTAGE – Volts p–p
FREQUENCY – Hz
Figure 16.Large Signal Frequency Response
–13010M
10k
100k1M
FREQUENCY – Hz
HARMONIC DISTORTION – dBc
Figure 17.Harmonic Distortion vs. Frequency
AMBIENT TEMPERATURE – 8C
TOTAL POWER DISSIPATION – Watts
Figure 18.Maximum Power Dissipation vs. Temperature
for Hermetic Packages
VIN
50VHP8130
PULSE
GENERATOR
–VS
+VS
RFB
0.1mF
0.1mF
VOUT TO
TEKTRONIX
P6201 FET
PROBEAD811
Figure 19.Noninverting Amplifier Connection
VIN
VOUT
Figure 20.Small Signal Pulse Response, Gain = +1
VIN
VOUT
Figure 21.Small Signal Pulse Response, Gain = +10
Figure 22.Closed-Loop Gain vs. Frequency, Gain = +1
Figure 23.Closed-Loop Gain vs. Frequency, Gain = +10
Figure 24.Large Signal Pulse Response, Gain = +10
AD811
VINRG
HP8130
PULSE
GENERATOR
–VS
RFB
0.1mF
VOUT TO
TEKTRONIX
P6201 FET
PROBE
Figure 25.Inverting Amplifier Connection
VIN
VOUT
Figure 26.Small Signal Pulse Response, Gain = –1
Figure 27.Small Signal Pulse Response, Gain = –10
Figure 28.Closed-Loop Gain vs. Frequency, Gain = –1
10M100M
FREQUENCY – Hz
GAIN – dB
Figure 29.Closed-Loop Gain vs. Frequency, Gain = –10
VIN
VOUT
Figure 30.Large Signal Pulse Response, Gain = –10
–Typical Characteristics, Inverting Connection

Partno	Mfg	Dc	Qty	Available	Descript
AD811	AD	N/a	14	avai	High Performance Video Op Amp