AD8079AR-AD8079AR-REEL-AD8079BR-AD8079BR-REEL Fast Delivery |IC PHOENIX CO.,LIMITED

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AD8079AR-AD8079AR-REEL-AD8079BR-AD8079BR-REEL
Dual 260 MHz Gain = +2.0 & +2.2 Buffer
FEATURES
Factory Set Gain
AD8079A: Gain = +2.0 (Also +1.0 & –1.0)
AD8079B: Gain = +2.2 (Also +1 & –1.2)
Gain of 2.2 Compensates for System Gain Loss
Minimizes External Components
Tight Control of Gain and Gain Matching (0.1%)
Optimum Dual Pinout
Simplifies PCB Layout
Low Crosstalk of –70 dB @ 5 MHz
Excellent Video Specifications (RL = 150 V)
Gain Flatness 0.1 dB to 50 MHz
0.01% Differential Gain Error
0.028 Differential Phase Error
Low Power of 50 mW/Amplifier (5 mA)
High Speed and Fast Settling
260 MHz, –3 dB Bandwidth
750 V/ms Slew Rate (2 V Step), 800 V/ms (4 V Step)
40 ns Settling Time to 0.1% (2 V Step)
Low Distortion of –65 dBc THD, fC = 5 MHz
High Output Drive of Over 70 mA
Drives Up to 8 Back-Terminated 75 V Loads (4 Loads/
Side) While Maintaining Good Differential Gain/
Phase Performance (0.01%/0.178)
High ESD Tolerance (5 kV)
Available in Small 8-Pin SOIC
APPLICATIONS
Differential A-to-D Driver
Video Line Driver
Differential Line Driver
Professional Cameras
Video Switchers
Special Effects
RF Receivers
FUNCTIONAL BLOCK DIAGRAM
8-Pin Plastic SOIC
Dual 260 MHz
Gain = +2.0 & +2.2 Buffer
REV.A
PRODUCT DESCRIPTION
The AD8079 is a dual, low power, high speed buffer designed
to operate on±5 V supplies. The AD8079’s pinout offers excel-
lent input and output isolation compared to the traditional dual
amplifier pin configuration. With two ac ground pins separating
both the inputs and outputs, the AD8079 achieves very low
crosstalk of less than –70 dB at 5 MHz.
Additionally, the AD8079 contains gain setting resistors factory
set at G = +2.0 (A grade) or Gain = +2.2 (B grade) allowing
circuit configurations with minimal external components. The
B grade gain of +2.2 compensates for gain loss through a system
by providing a single-point trim. Using active laser trimming of
these resistors, the AD8079 guarantees tight control of gain and
channel-channel gain matching. With its performance and con-
figuration, the AD8079 is well suited for driving differential
cables and transformers. Its low distortion and fast settling are
ideal for buffering high speed dual or differential A-to-D con-
verters.
The AD8079 features a unique transimpedance linearization
circuitry. This allows it to drive video loads with excellent differ-
ential gain and phase performance of 0.01% and 0.02° on onlymW of power per amplifier. It features gain flatness of 0.1 dB
to 50 MHz. This makes the AD8079 ideal for professional video
electronics such as cameras and video switchers.
The AD8079 offers low power of 5 mA/amplifier (VS = ±5 V)
and can run on a single +12 V power supply while delivering
over 70 mA of load current. All of this is offered in a small 8-pin
SOIC package. These features make this amplifier ideal for por-
table and battery powered applications where size and power are
critical.
The outstanding bandwidth of 260 MHz along with 800 V/μs of
slew rate make the AD8079 useful in many general purpose high
speed applications where dual power supplies of ±3 V to ±6 V
are required.
The AD8079 is available in the industrial temperature range of
–40°C to +85°C.
Figure 1.Frequency Response and Flatness
AD8079–SPECIFICATIONS
NOISE/HARMONIC PERFORMANCE
OUTPUT CHARACTERISTICS
NOTESOutput current is limited by the maximum power dissipation in the package. See the power derating curves.
Specifications subject to change without notice.
(@ TA = +258C, VS = 65 V, RL = 100 V, unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS1
SupplyVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6V
InternalPowerDissipation2
SmallOutlinePackage (R) . . . . . . . . . . . . . . . . . .0.9Watts
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±VS
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . .–65°C to +125°C
Operating Temperature Range (A Grade) . . .–40°C to +85°C
Lead Temperature Range (Soldering10sec) . . . . . . . .+300°C
NOTESStresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.Specification is for device in free air:
8-Pin SOIC Package: θJA = 160°C/Watt
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8079 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
While the AD8079 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
Figure 2.Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8079 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
AD8079
FREQUENCY – Hz
NORMALIZED FLATNESS – dB10M100M
NORMALIZED FREQUENCY RESPONSE – dB
Figure 6.Frequency Response and Flatness
FREQUENCY – Hz
DISTORTION – dBc
–11010k100M100k1M10M
–90
Figure 7.Distortion vs. Frequency, RL = 100 Ω
100k100M10M1M10k
FREQUENCY – Hz
DISTORTION – dBc
Figure 8.Distortion vs. Frequency, RL = 1 kΩ
+5V10µF
VIN
GENERATOR
10µF
–5V
TR/TF = 250ps
Figure 3.Test Circuit
Figure 4.100 mV Step Response
Figure 5.1 V Step Response
CROSSTALK – dB
FREQUENCY – Hz
100k200M0.1M1M10M100M
–100
Figure 9.Crosstalk (Output-to-Output) vs. Frequency
IRE
DIFF PHASE – Degrees34567891011
DIFF GAIN – %
IRE
1234567891011
Figure 10.Differential Gain and Differential Phase
(per Amplifier)
NOTES:SIDE 1: VIN = 0V; 8mV/div RTO
SIDE 2: 1V STEP RTO; 400mV/div
Figure 11. Pulse Crosstalk, Worst Case, 1V Step
Figure 12.Large Signal Frequency Response
Figure 13.Short-Term Settling Time
Figure 14.Long-Term Settling Time
AD8079
JUNCTION TEMPERATURE – °C
OUTPUT SWING – Volts
Figure 15.Output Swing vs. Temperature
JUNCTION TEMPERATURE – °C
INPUT BIAS CURRENT – µA
–55125–35–15525456585105
Figure 16.Input Bias Current vs. Temperature
JUNCTION TEMPERATURE – °C
INPUT OFFSET VOLTAGE RTO – mV
Figure 17.Input Offset Voltage vs. Temperature
JUNCTION TEMPERATURE – °C
TOTAL SUPPLY CURRENT – mA
Figure 18.Total Supply Current vs. Temperature
SHORT CIRCUIT CURRENT – mA
Figure 19.
FREQUENCY – Hz
100100k100
NOISE VOLTAGE, RTI – nV/ Hz10k
NOISE CURRENT – pA/ Hz
Figure 20.Noise vs. Frequency

Partno	Mfg	Dc	Qty	Available	Descript
AD8079AR	ADI	N/a	2	avai	Dual 260 MHz Gain = +2.0 & +2.2 Buffer
AD8079AR-REEL \|AD8079ARREEL	AD	N/a	5000	avai	Dual 260 MHz Gain = +2.0 & +2.2 Buffer
AD8079BR	AD	N/a	4	avai	Dual 260 MHz Gain = +2.0 & +2.2 Buffer
AD8079BR-REEL \|AD8079BRREEL	AD	N/a	5000	avai	Dual 260 MHz Gain = +2.0 & +2.2 Buffer