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AD8031ANZADN/a150avaiRail-to-Rail I/O Amplifiers (Single Amplifier)
AD8031ART-R2 |AD8031ARTR2ADN/a3845avaiRail-to-Rail I/O Amplifiers (Single Amplifier)


AD8031ART-R2 ,Rail-to-Rail I/O Amplifiers (Single Amplifier)SPECIFICATIONS +2.7 V Supply (@ T = +258C, V = +2.7 V, R = 1 kV to +1.35 V, R = 2.5 kV unless other ..
AD8031ART-REEL ,2.7 V, 800 uA, 80 MHz Rail-to-Rail I/O Amplifiersapplications,Circuit Diagramfrom battery-operated systems with large bandwidth requirementsFigure 1 ..
AD8031ART-REEL7 ,2.7 V, 800 uA, 80 MHz Rail-to-Rail I/O AmplifiersCHARACTERISTICSCommon-Mode Input Resistance 40 40 MWDifferential Input Resistance 280 280 kWInput C ..
AD8031ARZ-REEL , 2.7 V, 800 muA, 80 MHz Rail-to-Rail I/O Amplifiers
AD8031ARZ-REEL , 2.7 V, 800 muA, 80 MHz Rail-to-Rail I/O Amplifiers
AD8031ARZ-REEL7 , 2.7 V, 800 muA, 80 MHz Rail-to-Rail I/O Amplifiers
ADM802MAN ,Microprocessor Supervisory CircuitsAPPLICATIONSADM805LMicroprocessor SystemsPOWER FAIL ADM805MComputersPOWER FAILINPUT (PFI)OUTPUT (PF ..
ADM802MAN ,Microprocessor Supervisory CircuitsFEATURESPrecision Supply Voltage Monitor4.65 V ADM690A/ADM802L/ADM805LVBATT4.40 V ADM692A/ADM802M/A ..
ADM802MARN ,Microprocessor Supervisory CircuitsMicroprocessoraSupervisory CircuitsADM690A/ADM692A/ADM802L/M/ADM805L/MFUNCTIONAL BLOCK DIAGRAM
ADM803LAKS-REEL7 ,Microprocessor Supervisory Circuit in 3-Lead SC70, Active-Low Open-Drain Outputfeatures built-in glitch immunity, makingit immune to fast transients on V .CCThe ADM803/ADM809/ADM ..
ADM803MAKS-REEL7 ,Microprocessor Supervisory Circuit in 3-Lead SC70, Active-Low Open-Drain Outputfeatures built-in glitch immunity, makingit immune to fast transients on V .CCThe ADM803/ADM809/ADM ..
ADM803SAKS-REEL7 ,Microprocessor Supervisory Circuit in 3-Lead SC70, Active-Low Open-Drain OutputFEATURES FUNCTIONAL BLOCK DIAGRAMSpecified over TemperatureLow Power Consumption (17 A)ADM803Preci ..


AD8031ANZ-AD8031ART-R2
Rail-to-Rail I/O Amplifiers (Single Amplifier)
REV.B2.7 V, 800 mA, 80 MHz
Rail-to-Rail I/O Amplifiers
CONNECTION DIAGRAMS
FEATURES
Low Power
Supply Current 800 mA/Amplifier
Fully Specified at +2.7 V, +5 V and 65 V Supplies
High Speed and Fast Settling on +5 V
80 MHz –3 dB Bandwidth (G = +1)
30 V/ms Slew Rate
125 ns Settling Time to 0.1%
Rail-to-Rail Input and Output
No Phase Reversal with Input 0.5 V Beyond Supplies
Input CMVR Extends Beyond Rails by 200 mV
Output Swing to Within 20 mV of Either Rail
Low Distortion
–62 dB @ 1 MHz, VO = 2 V p-p
–86 dB @ 100 kHz, VO = 4.6 V p-p
Output Current: 15 mA
High Grade Option
VOS (max) = 1.5 mV
APPLICATIONS
High-Speed Battery-Operated Systems
High Component Density Systems
Portable Test Instruments
A/D Buffer
Active Filters
High-Speed Set-and-Demand Amplifier
8-Lead Plastic DIP (N),
SOIC (R) and mSOIC (RM)
Packages
8-Lead Plastic DIP (N)
and SOIC (R) PackagesNC
–IN
+IN
–VS
NC = NO CONNECT
OUT
+VS
5-Lead Plastic Surface Mount Package
SOT-23-5 (RT-5)
+IN
+VS
–VS–IN
VOUT
GENERAL DESCRIPTION

The AD8031 (single) and AD8032 (dual) single supply voltage
feedback amplifiers feature high-speed performance with 80MHz
of small signal bandwidth, 30 V/ms slew rate and 125 ns settling
time. This performance is possible while consuming less than
4.0mW of power from a single +5 V supply. These features
increase the operation time of high speed battery-powered
systems without compromising dynamic performance.
The products have true single supply capability with rail-to-rail
input and output characteristics and are specified for +2.7 V,
+5 V and –5 V supplies. The input voltage range can extend to
500 mV beyond each rail. The output voltage swings to within
20 mV of each rail providing the maximum output dynamic range.
The AD8031/AD8032 also offer excellent signal quality for only
800 mA of supply current per amplifier; THD is –62 dBc with a
2 V p-p, 1 MHz output signal and –86dBc for a 100kHz, 4.6 V p-p
signal on +5 V supply. The low distortion and fast settling time
make them ideal as buffers to single supply, A-to-D converters.
Operating on supplies from +2.7 V to +12 V and dual supplies up to6 V, the AD8031/AD8032 are ideal for a wide range of applications,
from battery-operated systems with large bandwidth requirements
to high-speed systems where component density requires lower
power dissipation. The AD8031/AD8032 are available in 8-lead
plastic DIP and SOIC packages and will operate over the indus-
trial temperature range of –40°C to +85°C. The AD8031A is also
available in the space-saving 5-lead SOT-23-5 package and the
AD8032A is available in AN 8-lead mSOIC package.
Circuit Diagram
Figure 1.Rail-to-Rail Performance at 100 kHz
AD8031/AD8032–SPECIFICATIONS
DISTORTION/NOISE PERFORMANCE
OUTPUT CHARACTERISTICS
Specifications subject to change without notice.
(@ TA = +258C, VS = +2.7 V, RL = 1 kV to +1.35 V, RF = 2.5 kV unless otherwise noted) +2.7 V Supply
AD8031/AD8032
SPECIFICATIONS

DISTORTION/NOISE PERFORMANCE
INPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
+5 V Supply(@ TA = +258C, VS = +5 V, RL = 1 kV to +2.5 V, RF = 2.5 kV unless otherwise noted)
DISTORTION/NOISE PERFORMANCE
INPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
Specifications subject to change without notice.
AD8031/AD8032–SPECIFICATIONS
(@ TA = +258C, VS = 65 V, RL = 1 kV to 0 V, RF = 2.5 kV unless otherwise noted)
65 V Supply
ORDERING GUIDE
AD8031AR
AD8031AR-REEL
AD8031AR-REEL7
AD8031ART-REEL
AD8031ART-REEL7
AD8031BN
AD8031BR
AD8031BR-REEL
AD8031BR-REEL7
AD8032AN
AD8032AR
AD8032AR-REEL
AD8032AR-REEL7
AD8032ARM
AD8032ARM-REEL
AD8032ARM-REEL7
AD8032BN
AD8032BR
AD8032BR-REEL
ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +12.6 V
Internal Power Dissipation2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.8 WattsSOIC (RM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 Watts
SOT-23-5 (RT) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 Watts
Input Voltage (Common-Mode) . . . . . . . . . . . . . –VS – 0.5 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . –3.4 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range (N, R, RM, RT)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +125°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.Specification is for the device in free air:
8-Lead Plastic DIP Package: qJA = 90°C/W.
8-Lead SOIC Package: qJA = 155°C/W.
8-Lead mSOIC Package: qJA = 200°C/W.
5-Lead SOT-23-5 Package: qJA = 240°C/W.
MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
AD8031/AD8032 are limited by the associated rise in junction
temperature. The maximum safe junction temperature for plas-
tic encapsulated devices is determined by the glass transition
temperature of the plastic, approximately +150°C. Exceeding
this limit temporarily may cause a shift in parametric perfor-
mance due to a change in the stresses exerted on the die by
the package. Exceeding a junction temperature of +175°C for
an extended period can result in device failure.
While the AD8031/AD8032 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (+150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves shown in Figure 2.
AMBIENT TEMPERATURE – 8C
MAXIMUM POWER DISSIPATION – Watts
0.5

Figure 2.Maximum Power Dissipation vs. Temperature
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
AD8031/AD8032–Typical Performance Characteristics
VOS – mV–4–3–2–1012345
NUMBER OF PARTS IN BIN

Figure 3.Typical VOS Distribution @ VS = 5 V
TEMPERATURE – 8C
OFFSET VOLTAGE – mV
1.7

Figure 4.Input Offset Voltage vs. Temperature
TEMPERATURE – 8C
INPUT BIAS –

0.8

Figure 5.Input Bias Current vs. Temperature
COMMON-MODE VOLTAGE – V
INPUT BIAS CURRENT – nA456789
–600

Figure 6.Input Bias Current vs. Common-Mode Voltage
Figure 7.VOS vs. Common-Mode Voltage
TEMPERATURE – 8C
SUPPLY CURRENT/AMPLIFIER –

850

Figure 8.Supply Current vs. Temperature
RLOAD – Ohms
10010k1k
DIFFERENCE FROM V
– Volts
–1.5

Figure 9.+Output Saturation Voltage vs. RLOAD @ +85°C
RLOAD – Ohms
10010k1k
DIFFERENCE FROM V
– Volts
–1.5

Figure 10.+Output Saturation Voltage vs. RLOAD @ +25°C
RLOAD – Ohms
10010k1k
DIFFERENCE FROM V
– Volts
–1.5

Figure 11.+Output Saturation Voltage vs. RLOAD @ –40°C
Figure 12.–Output Saturation Voltage vs. RLOAD @ +85°C
Figure 13.–Output Saturation Voltage vs. RLOAD @ +25°C
Figure 14.–Output Saturation Voltage vs. RLOAD @ –40°C
AD8031/AD8032–Typical Performance Characteristics
RLOAD – Ohms
105010k2k4k6k8k
GAIN – dB

Figure 15.Open-Loop Gain (AOL) vs. RLOAD
TEMPERATURE – 8C–4090–30–20–1001020304050607080
GAIN – dB

Figure 16.Open-Loop Gain (AOL) vs. Temperature
VOUT – V
– dB
100

Figure 17.Open-Loop Gain (AOL) vs. VOUT
INPUT VOLTAGE – Volts
INPUT BIAS CURRENT – mA

Figure 18.Differential Input Overvoltage I-V
Characteristics
Figure 19.Differential Gain and Phase @ VS = –5 V;
RL = 1 kV

Figure 20.Input Voltage Noise vs. Frequency
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