AD8022AR-AD8022ARM Fast Delivery |IC PHOENIX CO.,LIMITED

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AD8022AR-AD8022ARM
Dual High-Speed Low-Noise Op Amps
REV.0
Dual High-Speed
Low-Noise Op Amps
FUNCTIONAL BLOCK DIAGRAM
OUT1
–IN1
+IN1
–VS
+VS
OUT2
–IN2
+IN2
FEATURES
Low-Noise Ampliﬁers Provide Low Noise and Low
Distortion, Ideal for xDSL Modem Receiver
+5 V to 612 V Voltage Supply
Low-Power Consumption
4.0 mA/Amp (Typ) Supply Current
Voltage Feedback Ampliﬁers
Low Noise and Distortion
2.5 nV/√Hz Voltage Noise @ 100 kHz
SFDR –95 dBc @ 1 MHz
MTPR < –66 dBc
High Speed
120 MHz Bandwidth (–3 dB), G = 1
50 V/ms Slew Rate
Low-Offset Voltage, 1.5 mV Typical
APPLICATIONS
ADSL, VDSL, HDSL, and Proprietary xDSL Systems
Low-Noise Instrumentation Front End
Ultrasound Preamp
PRODUCT DESCRIPTION
The AD8022 consists of two low-noise, high-speed, voltage feed-
back ampliﬁers. Both inputs add only 2.5 nV/√Hz of voltage
noise. These dual ampliﬁers provide wideband, low-distortion
performance, with high-output current optimized for stability
when driving capacitive loads. Operating from +5 V to –12 V
supplies, the AD8022 typically consumes only 4.0 mA/Amp
quiescent current. The AD8022 is available in both an 8-lead
microSOIC and an 8-lead SOIC package. Fast overvoltage
recovery and wide bandwidth make the AD8022 ideal as the
receive channel front end to an ADSL, VDSL or proprietary
xDSL transceiver design.
Low-noise receive ampliﬁers in the AD8022 are independent
voltage feedback ampliﬁers and can be conﬁgured as the differ-
ential receiver from the line transformer or as independent active
ﬁlters in an xDSL line interface circuit.
Figure 1.Current and Voltage Noise vs. Frequency
AD8022–SPECIFICATIONS
(@ 258C, VS = 612 V, RL = 500 V, G = 1, TMIN = –408C, TMAX = +858C, unless
otherwise noted)
NOTESMultitone testing performed with 800 mV rms across a 500 W load at Points A and B on Figure 17.
Speciﬁcations subject to change without notice.
AD8022
(@ 258C, VS = 62.5 V, RL = 500 V, G = 1, TMIN = –408C, TMAX = +858C, unless
otherwise noted)
NOTES
1Multitone testing performed with 800 mV rms across a 500 W load at Points A and B on Figure 17.
Speciﬁcations subject to change without notice.
SPECIFICATIONS
AD8022
ORDERING GUIDE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8022 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
AMBIENT TEMPERATURE – 8C
MAXIMUM POWER DISSIPATION – Watts
0.5–40–30–20–100102030405060708090
Figure 2.Plot of Maximum Power Dissipation vs.
Temperature
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 1.6 W
microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 1.2 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . –VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . –0.8 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range RM, R . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this speciﬁcation is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.Speciﬁcation is for the device in free air:
8-Lead SOIC Package: qJA = 160°C/W.
8-Lead microSOIC Package: qJA = 200°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8022
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change
in the stresses exerted on the die by the package. Exceeding a
junction temperature of 175°C for an extended period can result
in device failure.
While the AD8022 is internally short circuit protected, this may not
be sufﬁcient to guarantee that the maximum junction temperature
(150°C) is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power derat-
ing curves.
FREQUENCY – MHz10100500
0.1
Figure 3.Frequency Response vs. Signal Level,
VS = –12 V, G = 1
FREQUENCY – Hz
100k
–0.610M100M
Figure 4.Fine-Scale Gain Flatness vs. Frequency, G = 1
SUPPLY VOLTAGE – 6Volts
FREQUENCY – MHz81012
100
Figure 5.Bandwidth vs. Supply, RL = 500 W, VIN = –10 dBm
Figure 6.Frequency Response vs. RF, G = 1, VS = –12 V,
VIN = 22 dBm
Figure 7.Fine-Scale Gain Flatness vs. Frequency, G = 2
Figure 8.Slew Rate vs. Supply Voltage, VS = –12 V, G = 2
AD8022

INPUT
OUTPUT
Figure 9.Noninverting Small Signal Pulse Response,
RL = 500 W, VS = –12 V, G = 1, RF = 0

INPUT
OUTPUT
Figure 10.Noninverting Large Signal Pulse Response,
RL = 500 W, VS = –12 V, G = 1, RF = 0

TIME – ns
SETTLING TIME – %
–0.440608010012020
Figure 11.Settling Time to 0.1%, VS = –12 V,
Step Size = 2V p-p, G = 2, RL = 500 W

Figure 12.Noninverting Small Signal Pulse Response,
RL = 500 W, VS = –2.5 V, G = 1, RF = 0

Figure 13.Noninverting Large Signal Pulse Response,
RL = 500 W, VS = –2.5 V, G = 1, RF = 0

Figure 14.Settling Time to 0.1%, VS = –2.5 V,
Step Size = 2V p-p, G = 2, RL = 500 W
Figure 15.Distortion vs. Output Voltage, VS = –12 V,
G = 2, f = 1 MHz, RL = 500 W, RF = 715 W
FREQUENCY – Hz
HARMONIC DISTORTION – dB
10k100k1M1k
–50
Figure 16.Distortion vs. Frequency, VS = –12 V,
RL = 500 W, RF = 715 W, VOUT = 2 V p-p, Gain = 1
250V
Figure 17.Multitone Power Ratio Test Circuit

Figure 18.Distortion vs. Output Voltage, VS = –2.5 V,
G = 2, f = 1 MHz, RL = 500 W, RF = 715 W
Figure 19.Distortion vs. Frequency, VS = –2.5 V,
RL = 500 W, RF = 715 W, VOUT = 2 V p-p, Gain = 1

Figure 20.Input Common-Mode Voltage Range
AD8022
FREQUENCY – kHz
10dB/DIV
Figure 21.Multitone Power Ratio: VS = –6 V, RL = 500 W,
Full Rate ADSL (DMT), Downstream
FREQUENCY – kHz
10dB/DIV
Figure 22.Multitone Power Ratio: VS = –12 V, RL = 500 W,
Full Rate ADSL (DMT), Downstream

TEMPERATURE – 8C
BIAS CURRENT –
–40–20020406080100120140
Figure 23.Bias Current vs. Temperature
Figure 24.Multitone Power Ratio: VS = –6 V, RL = 500 W,
Full Rate ADSL (DMT), Upstream
Figure 25.Multitone Power Ratio: VS = –12 V, RL = 500 W,
Full Rate ADSL (DMT), Upstream

TEMPERATURE – 8C
SUPPLY CURRENT – Total mA100
7.5
Figure 26.Total Supply Current Over Temperature

Partno	Mfg	Dc	Qty	Available	Descript
AD8022AR	ADI	N/a	2074	avai	Dual High-Speed Low-Noise Op Amps
AD8022ARM	AD	N/a	19973	avai	Dual High-Speed Low-Noise Op Amps