AD8011AR-REEL ,300 MHz, 1 mA Current Feedback AmplifierSpecifications (R = 1 k, G = +2)LGain Flatness 0.1 dB to 25 MHz NC = NO CONNECT0.02% Differential ..
AD8012AR ,Dual 350 MHz Low Power Amplifierspecifications are 0.02% differential gainAMP 1 +and 0.06 degree differential phase, excellent for ..
AD8012ARM ,Dual 350 MHz Low Power AmplifierSpecifications subject to change without notice.–2– REV. AAD8012(@ T +258C, V = +5 V, G = +2, R = 1 ..
AD8012ARMZ , Dual 350 MHz Low Power Amplifier
AD8012AR-REEL ,Dual 350 MHz Low Power AmplifierSPECIFICATIONSDUAL SUPPLY (@ T = +258C, V = 65 V, G = +2, R = 100 V, R = R = 750 V, unless otherwis ..
AD8013 ,Single Supply, Low Power, Triple Video AmplifierAPPLICATIONSeach amplifier swing to within one volt of either supply rail toLCD Displayseasily acco ..
ADM699AN ,Microprocessor Supervisory CircuitsGENERAL DESCRIPTION+5VThe ADM698/ADM699 supervisory circuits provide powersupply monitoring and wat ..
ADM699AN ,Microprocessor Supervisory CircuitsAPPLICATIONSWATCHDOG WATCHDOG WATCHDOGMicroprocessor SystemsINPUT TRANSITION DETECTORWDI* OUTPUT WD ..
ADM699AR ,Microprocessor Supervisory CircuitsMicroprocessoraSupervisory CircuitsADM698/ADM699
ADM705 ,Low Cost 礟 Supervisor with 4.65V Threshold Voltage, Watchdog, Power Fail and Manual Reset Features and Active Low Reset OutputGENERAL DESCRIPTION ADM708POWER-FAILPOWER-FAILINPUT (PFI)The ADM705/ADM706/ADM707/ADM708 are low co ..
ADM705AN ,Low Cost uP Supervisory CircuitsSPECIFICATIONSCC A MIN MAXParameter Min Typ Max Unit Test Conditions/CommentsV Operating Voltage Ra ..
ADM705AR ,Low Cost uP Supervisory CircuitsGENERAL DESCRIPTION4.65V*ADM707/The ADM705–ADM708 are low cost µ P supervisory circuits.ADM708POWER ..
AD8011AN-AD8011AR-AD8011AR-REEL
300 MHz, 1 mA Current Feedback Amplifier
FUNCTIONAL BLOCK DIAGRAM
8-Lead Plastic DIP and SOICREV.B
300 MHz, 1 mA
Current Feedback Amplifier
FEATURES
Easy to Use
Low Power
1 mA Power Supply Current (5 mW on +5 VS)
High Speed and Fast Settling on +5 V
300 MHz, –3 dB Bandwidth (G = +1)
180 MHz, –3 dB Bandwidth (G = +2)
2000 V/�s Slew Rate
29 ns Settling Time to 0.1%
Good Video Specifications (RL = 1 k�, G = +2)
Gain Flatness 0.1 dB to 25 MHz
0.02% Differential Gain Error
0.06� Differential Phase Error
Low Distortion
–70 dBc Worst Harmonic @ 5 MHz
–62 dBc Worst Harmonic @ 20 MHz
Single Supply Operation
Fully Specified for +5 V Supply
APPLICATIONS
Power Sensitive, High Speed Systems
Video Switchers
Distribution Amplifiers
A-to-D Driver
Professional Cameras
CCD Imaging Systems
Ultrasound Equipment (Multichannel)Figure 1.Frequency Response; G = +2, VS = +5 V or ±5 V
*Protected under Patent Number 5,537,079.Figure 2.Distortion vs. Frequency; VS = ±5 V
amplifier. It also can be used to replace high-speed amplifiers
consuming more power. The AD8011 is a current feedback
amplifier and features gain flatness of 0.1 dB to 25 MHz while
offering differential gain and phase error of 0.02% and 0.06° on
a single +5 V supply. This makes the AD8011 ideal for profes-
sional video electronics such as cameras, video switchers or any
high speed portable equipment. Additionally, the AD8011’s
low distortion and fast settling make it ideal for buffering high
speed 8-, 10-, 12-bit A-to-D converters.
The AD8011 offers very low power of 1 mA max and can run
on single +5 V to +12 V supplies. All this is offered in a small
8-lead plastic DIP or 8-lead SOIC package. These features fit
well with portable and battery-powered applications where size
and power are critical.
The AD8011is availablein the industrial temperature rangeof –
40°C to +85°C.
PRODUCT DESCRIPTIONThe AD8011 is a very low power, high-speed amplifier designed
to operate on+5 V or±5 V supplies. With wide bandwidth, low
distortion and low power, this device is ideal as a general-purpose
AD8011–SPECIFICATIONS
DUAL SUPPLYNOISE/HARMONIC PERFORMANCE
DC PERFORMANCE
INPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
POWER SUPPLY
Specifications subject to change without notice.
(@ TA = +25�C, VS = �5 V, G = +2, RF = 1 k�, RL = 1 k�, unless otherwise noted)
SINGLE SUPPLYNOISE/HARMONIC PERFORMANCE
INPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
POWER SUPPLY
Specifications subject to change without notice.
AD8011
(@ TA = +25�C, VS = +5 V, G = +2, RF = 1 k�, VCM = 2.5 V, RL = 1 k�, unless otherwise noted)
AD8011
ABSOLUTE MAXIMUM RATINGS1SupplyVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6V
InternalPowerDissipation2
PlasticDIP Package (N) . . . . . . . .Observe Derating Curves
SmallOutlinePackage (R) . . . . . . .Observe Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .±VS
DifferentialInputVoltage . . . . . . . . . . . . . . . . . . . . . . .±2.5V
Output Short Circuit Duration. . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . .–65°C to +125°C
Operating Temperature Range (A Grade) . . .–40°C to +85°C
Lead Temperature Range (Soldering10sec) . . . . . . . .+300°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead Plastic DIP Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 155°C/W
MAXIMUM POWER DISSIPATIONThe maximum power that can be safely dissipated by the
AD8011 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
While the AD8011 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves (shown below in Figure 3).
Figure 3.Maximum Power Dissipation vs. Temperature
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8011 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Figure 7.Test Circuit; Gain = –1
Figure 8.*100 mV Step Response; G = –1, VS = ±2.5 V or ±5 V
Figure 9.*Step Response; G = –1, VS = ±2.5 V (2 V
Step) and ±5 V (4 V Step)
Figure 4.Test Circuit; Gain = +2
Figure 5.*100 mV Step Response; G = +2, VS = ±2.5 V or ±5 V
Figure 6.*Step Response; G = +2, VS = ±2.5 V (2 V
Step) and ±5 V (4 V Step)
*NOTE:VS = ±2.5 V operation is identical to VS = +5 V single supply operation.
AD8011Figure 10.Gain Flatness; G = +2
Figure 11.Distortion vs. Frequency; VS = ±5 V
150Figure 12.Diff Phase and Diff Gain; VS = ±5 V
10 100 1000 10000
LOAD RESISTANCE – Ohms
SWING
V p-pFigure 13.Output Voltage Swing vs. Load
Figure 14.Distortion vs. Frequency; VS = +5 V
0.08
DIFF GAIN
1000IRE
DIFF PHASE
Degrees
150
DIFF PHASE
Degrees
1000IRE
150
DIFF GAIN
0.6Figure 15.Diff Phase and Diff Gain; VS = +5 V
Figure 19.Large Signal Frequency Response;
VS = +5 V, G = +2
Figure 20.Short-Term Settling Time; VS = +5 V or ±5 V
Figure 21.Long-Term Settling Time; VS = +5 V or ±5 V
1 10 40 100 500
FREQUENCY – MHz
OUTPUT VOLTAGE
dBV
–21Figure 16.Large Signal Frequency Response;
VS = ±5 V, G = +2
Figure 17.Frequency Response; G = +1, +2, +10;
VS = +5 V or ±5 V
Figure 18.Frequency Response; G = –1, –10;
VS = +5 V or ±5 V
AD8011 Figure 22.CMRR vs. Frequency; VS = +5 V or ±5 V
Figure 23.Output Resistance vs. Frequency; VS = +5 V
or ±5 V
Figure 24.Transimpedance Gain and Phase vs. Frequency
Figure 25.PSRR vs. Frequency; VS = +5 V or ±5 V
500 1k 10k 100k
FREQUENCY – Hz
INPUT VOLTAGE NOISE
nV/
INPUT CURRENT NOISE
pA/ Figure 26.Noise vs. Frequency; VS = +5 V or ±5 V
Figure 27.Output Swing vs. Supply
