AD8009ARZ ,1 GHz, 5,500 V/µs Low Distortion AmplifierSPECIFICATIONS (@ T = 25C, V = 5 V, R = 100 ; for R Package: R = 301 for G = +1, +2,A S L FR = ..
AD8009ARZ-REEL ,1 GHz, 5,500 V/µs Low Distortion AmplifierFEATURESUltrahigh Speed8-Lead Plastic SOIC (R-8) 5-Lead SOT-23 (RT-5)5,500 V/s Slew Rate, 4 V Step ..
AD8009ARZ-REEL7 ,1 GHz, 5,500 V/µs Low Distortion AmplifierSPECIFICATIONSFAD8009AR/JRTModel Conditions Min Typ Max UnitDYNAMIC PERFORMANCE–3 dB Small Signal B ..
AD8009JRTZ-R2 ,1 GHz, 5,500 V/µs Low Distortion AmplifierCHARACTERISTICSOutput Voltage Swing 1.1 to 3.9 VOutput Current R = 10 Ω , P Package = 0.7 W 175 mAL ..
AD8009JRTZ-REEL7 ,1 GHz, 5,500 V/µs Low Distortion AmplifierCHARACTERISTICSOutput Voltage Swing ±3.7 ±3.8 VOutput Current R = 10 Ω , P Package = 0.7 W 150 175 ..
AD8010 ,Low Power, High Current Distribution AmplifierSpecifications subject to change without notice.–2– REV. BAD80101MAXIMUM POWER DISSIPATIONABSOLUTE ..
ADM6996L ,6 port 10/100 Mb/s Single Chip Ethernet Switch ControllerTable of Contents Chapter 1 Product Overview ....... 1-1 1.1 Overview....... 1-1 1.2
ADM699AN ,Microprocessor Supervisory CircuitsGENERAL DESCRIPTION+5VThe ADM698/ADM699 supervisory circuits provide powersupply monitoring and wat ..
ADM699AN ,Microprocessor Supervisory CircuitsAPPLICATIONSWATCHDOG WATCHDOG WATCHDOGMicroprocessor SystemsINPUT TRANSITION DETECTORWDI* OUTPUT WD ..
ADM699AR ,Microprocessor Supervisory CircuitsMicroprocessoraSupervisory CircuitsADM698/ADM699
ADM705 ,Low Cost 礟 Supervisor with 4.65V Threshold Voltage, Watchdog, Power Fail and Manual Reset Features and Active Low Reset OutputGENERAL DESCRIPTION ADM708POWER-FAILPOWER-FAILINPUT (PFI)The ADM705/ADM706/ADM707/ADM708 are low co ..
ADM705AN ,Low Cost uP Supervisory CircuitsSPECIFICATIONSCC A MIN MAXParameter Min Typ Max Unit Test Conditions/CommentsV Operating Voltage Ra ..
AD8009ARZ-AD8009ARZ-REEL-AD8009ARZ-REEL7-AD8009JRTZ-R2-AD8009JRTZ-REEL7
1 GHz, 5,500 V/µs Low Distortion Amplifier
REV.F
1 GHz, 5,500 V/�s
Low Distortion Amplifier
FUNCTIONAL BLOCK DIAGRAMS
8-Lead Plastic SOIC (R-8)5-Lead SOT-23 (RT-5)
PRODUCT DESCRIPTIONThe AD8009 is an ultrahigh speed current feedback amplifier
with a phenomenal 5,500 V/µs slew rate that results in a rise
time of 545 ps, making it ideal as a pulse amplifier.
The high slew rate reduces the effect of slew rate limiting and
results in the large signal bandwidth of 440 MHz required for
high resolution video graphic systems. Signal quality is main-
tained over a wide bandwidth with worst-case distortion of
–40dBc @ 250 MHz (G = +10, 1 V p-p). For applications with
multitone signals, such as IF signal chains, the third order
intercept (3IP) of 12 dBm is achieved at the same frequency. This
distortion performance coupled with the current feedback
architecture make the AD8009 a flexible component for a gain
stage amplifier in IF/RF signal chains.
The AD8009 is capable of delivering over 175 mA of load current
and will drive four back terminated video loads while maintaining
low differential gain and phase error of 0.02% and 0.04°,
respectively. The high drive capability is also reflected in the
ability to deliver 10 dBm of output power @ 70 MHz with
–38dBc SFDR.
The AD8009 is available in a small SOIC package and will
operate over the industrial temperature range –40°C to +85°C.
The AD8009 is also available in an SOT-23-5 and will operate
over the commercial temperature range of 0°C to 70°C.
DIST
TION (dBc)
FREQUENCY RESPONSE (MHz)10
FEATURES
Ultrahigh Speed
5,500 V/�s Slew Rate, 4 V Step, G = +2
545 ps Rise Time, 2 V Step, G = +2
Large Signal Bandwidth
440 MHz, G = +2
320 MHz, G = +10
Small Signal Bandwidth (–3 dB)
1 GHz, G = +1
700 MHz, G = +2
Settling Time 10 ns to 0.1%, 2 V Step, G = +2
Low Distortion over Wide Bandwidth
SFDR
–66 dBc @ 20 MHz, Second Harmonic
–75 dBc @ 20 MHz, Third Harmonic
Third Order Intercept (3IP)
26 dBm @ 70 MHz, G = +10
Good Video Specifications
Gain Flatness 0.1 dB to 75 MHz
0.01% Differential Gain Error, RL = 150 �
0.01� Differential Phase Error, RL = 150 �
High Output Drive
175 mA Output Load Drive
10 dBm with –38 dBc SFDR @ 70 MHz, G = +10
Supply Operation
+5 V to �5 V Voltage Supply
14 mA (Typ) Supply Current
APPLICATIONS
Pulse Amplifier
IF/RF Gain Stage/Amplifiers
High Resolution Video Graphics
High Speed Instrumentations
CCD Imaging AmplifierFigure 1.Large Signal Frequency Response; G = +2 and +10
AD8009–SPECIFICATIONS(@ TA = 25�C, VS = �5 V, RL = 100 �; for R Package: RF = 301 � for G = +1, +2,
RF = 200 � for G = +10; for RT Package: RF = 332 � for G = +1, RF = 226 � for G = +2 and RF = 191� for G = +10, unless otherwise noted.)
AD8009
SPECIFICATIONS
(@ TA = 25�C, VS = �5 V, RL = 100 �, for R Package: RF = 301 � for G = +1, +2,
RF = 200 � for G = +10).Specifications subject to change without notice.
AD8009
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
ABSOLUTE MAXIMUM RATINGS1Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . .0.75 W
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . .±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .±3.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range R Package . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Operating Temperature Range (J Grade) . . . . . . . 0°C to 70°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.Specification is for device in free air:
8-Lead SOIC Package: θJA = 155°C/W.
5-Lead SOT-23 Package: θJA = 240°C/W.
MAXIMUM POWER DISSIPATIONThe maximum power that can be safely dissipated by the AD8009
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately 150°C. Exceeding this limit temporarily may cause
a shift in parametric performance due to a change in the stresses
exerted on the die by the package. Exceeding a junction tempera-
ture of 175°C for an extended period can result in device failure.
While the AD8009 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tempera-
ture (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
Figure 3.Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
ModelAD8009AR
AD8009AR-REEL
AD8009AR-REEL7
AD8009ARZ*
AD8009ARZ-REEL*
AD8009ARZ-REEL7*
AD8009JRT-R2
AD8009JRT-REEL
AD8009JRT-REEL7
AD8009JRTZ-REEL*
AD8009JRTZ-REEL7*
AD8009ACHIPS
*Z = Pb-free part.
TPC 1.Frequency Response; G = +1, +2, +10,and RT Packages
TPC 2.Large Signal Frequency Response; G = +2
TPC 3.Large Signal Frequency Response vs.
Temperature; G = +2
TPC 4.Gain Flatness; G = +2
TPC 5.Gain Flatness; G = +2; VS = 5 V
GAIN (dB)
FREQUENCY (MHz)TPC 6.Large Signal Frequency Response; G = +10
AD8009TPC 7.Large Signal Frequency Response vs.
Temperature; G = +10
TPC 8.Distortion vs. Frequency; G = +2
FREQUENCY (MHz)
DIST
TION (dBc)100
–70TPC 9.Distortion vs. Frequency; G = +2; VS = 5 V
TPC 10.Second Harmonic Distortion vs. POUT; (G = +10)
TPC 11.Differential Gain and Phase
DIST
TION (dBc) 105
FREQUENCY (MHz)TPC 12.Distortion vs. Frequency; G = +10
TPC 13.Third Harmonic Distortion vs. POUT; (G = +10)
TPC 14.Two Tone, Third Order IMD Intercept vs.
Frequency; G = +10
TRANSRESISTANCE (
100k
10k
PHASE (Degrees)
FREQUENCY (MHz)
–160100TPC 15.Transresistance and Phase vs. Frequency
TPC 16.PSRR vs. Frequency
TPC 17.Current Noise vs. Frequency
TPC 18.CMRR vs. Frequency
AD8009TPC 19.Output Resistance vs. Frequency
TPC 20.Voltage Noise vs. Frequency
TPC 21.Noise Figure
TPC 22.Input VSWR; G = +10
TPC 23.Maximum Output Power vs. Frequency
TPC 24.Reverse Isolation (S12); G = +10
