AD8005ANZ Fast Delivery |IC PHOENIX CO.,LIMITED

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AD8005ANZ
Ultralow Power, 170 MHz and Slew Rate of 280 V/µs
REV. A
FEATURES
Ultralow Power
400mA Power Supply Current (4mW on 65 VS)
Specified for Single Supply Operation
High Speed
270MHz, –3dB Bandwidth (G = +1)
170MHz, –3dB Bandwidth (G = +2)
280V/ms Slew Rate (G = +2)ns Settling Time to 0.1%, 2 V Step (G = +2)
Low Distortion/Noise
–63dBc @ 1MHz, VO = 2 V p-p
–50dBc @ 10MHz, VO = 2 V p-p
4.0 nV/√Hz Input Voltage Noise @ 10 MHz
Good Video Specifications (RL = 1kV, G = +2)
Gain Flatness 0.1dB to 30MHz
0.11% Differential Gain Error
0.48 Differential Phase Error
APPLICATIONS
Signal Conditioning
A/D Buffer
Power-Sensitive, High-Speed Systems
Battery Powered Equipment
Loop/Remote Power Systems
Communication or Video Test Systems
Portable Medical Instruments
FUNCTIONAL BLOCK DIAGRAM
8-Lead Plastic DIP and SOICNC
–IN
+IN
–VS
+VS
OUT
NC = NO CONNECT
5-Lead SOT-23
AD8005
–VS
+VS
–IN
OUT
+IN
PRODUCT DESCRIPTION
The AD8005 is an ultralow power, high-speed amplifier with a
wide signal bandwidth of 170MHz and slew rate of 280V/ms.
This performance is achieved while consuming only 400mA of
quiescent supply current. These features increase the operating
time of high-speed battery-powered systems without reducing
dynamic performance.
FREQUENCY – MHz
NORMALIZED GAIN – dB
Figure 1.Frequency Response; G = +2, VS = +5V or –5V
270 MHz, 400mA
Current Feedback Amplifier
The current feedback design results in gain flatness of 0.1dB
to 30MHz while offering differential gain and phase errors of
0.11% and 0.4°. Harmonic distortion is low over a wide
bandwidth with THDs of –63dBc at 1MHz and –50dBc atMHz. Ideal features for a signal conditioning amplifier or
buffer to a high-speed A-to-D converter in portable video,
medical or communication systems.
The AD8005 is characterized for +5V and –5V supplies and
will operate over the industrial temperature range of –40°C to
+85°C. The amplifier is supplied in 8-lead plastic DIP, 8-lead
SOIC and 5-lead SOT-23 packages.
FREQUENCY – MHz10
DISTORTION – dBc
Figure 2.Distortion vs. Frequency; VS = –5V
AD8005–SPECIFICATIONSV SUPPLIES
Specifications subject to change without notice.
(@ TA = +258C, VS = 65V, RL = 1kV unless otherwise noted)
V SUPPLYDISTORTION/NOISE PERFORMANCE
DC PERFORMANCE
INPUT CHARACTERISTICS
Specifications subject to change without notice.
(@ TA = +258C, VS = +5V, RL = 1 kV to 2.5 V unless otherwise noted)
AD8005
AD8005
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V
Internal Power Dissipation2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . .1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . .0.75 Watts
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . 0.5 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . .–VS – 1V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .–3.5V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range
N, R & RT Package . . . . . . . . . . . . . . . . .–65°C to +125°C
Operating Temperature Range (A Grade) . . .–40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . .+300°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.Specification is for device in free air:
8-Lead Plastic DIP Package: qJA = 90°C/W
8-Lead SOIC Package: qJA = 155°C/W
5-Lead SOT-23 Package: qJA = 240°C/W
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8005 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8005 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
While the AD8005 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves shown in Figure 3.
AMBIENT TEMPERATURE – °C80
MAXIMUM POWER DISSIPATION – Watts6050403020100–40–30–20–10
Figure 3.Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
FREQUENCY – MHz50010100
NORMALIZED GAIN – dB
Figure 4.Frequency Response; G = +1, +2, +10; VS = –5 V
FREQUENCY – MHz
GAIN – dB
Figure 5.Gain Flatness; G = +2; VS = –5 V or +5 V
FREQUENCY – MHz50010100
GAIN – dB
Figure 6.Large Signal Frequency Response;
G = +2, RL = 1 kW
FREQUENCY – MHz50010100
NORMALIZED GAIN – dB
Figure 7.Frequency Response; G = –1, –10; VS = –5 V
FREQUENCY – Hz
140100M10k100k1M10M1G
PHASE – Degrees
GAIN – dB
Figure 8.Transimpedance Gain and Phase vs. Frequency
FREQUENCY – MHz
PEAK-TO-PEAK OUTPUT VOLTAGE
Figure 9.Output Swing vs. Frequency; VS = –5 V
AD8005–Typical Characteristics
FREQUENCY – MHz10
DISTORTION – dBc
Figure 10.Distortion vs. Frequency; VS = –5 V
DIFF GAIN – %
11th1st2nd3rd4th5th6th7th8th9th10th
DIFF PHASE – Degrees
MODULATING RAMP LEVEL – IRE
MIN = –0.06 MAX = 0.03 p-p/MAX = 0.09
MIN = –0.01 MAX = 0.39 p-p = 0.40
Figure 11.Differential Gain and Phase, VS = –5 V
LOAD RESISTANCE – V1k10k100
SWING – V p-p
Figure 12.Output Voltage Swing vs. Load
FREQUENCY – MHz10
DISTORTION – dBc
Figure 13.Distortion vs. Frequency VS = +5 V
11th1st2nd3rd4th5th6th7th8th9th10th
DIFF PHASE – Degrees
MODULATING RAMP LEVEL – IRE
DIFF GAIN – %
MIN = –0.08 MAX = 0.04 p-p/MAX = 0.12
MIN = 0.00 MAX = 0.70 p-p = 0.70
Figure 14.Differential Gain and Phase, VS = +5 V
TOTAL SUPPLY VOLTAGE – Volts
PEAK-TO-PEAK OUTPUT
AT 5MHz (4
Figure 15.Output Swing vs. Supply

Partno	Mfg	Dc	Qty	Available	Descript
AD8005ANZ	ADI	N/a	3	avai	Ultralow Power, 170 MHz and Slew Rate of 280 V/µs