AD8000YCPZ-REEL7-AD8000YRDZ-AD8000YRDZ-REEL Fast Delivery |IC PHOENIX CO.,LIMITED

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AD8000YCPZ-REEL7-AD8000YRDZ-AD8000YRDZ-REEL
1.5 GHz, Ultra-High Speed Op Amp with Power-Down
1.5 GHz Ultrahigh Speed Op AmpRev. 0
FEATURES
High speed
1.5 GHz, −3 dB bandwidth (G = +1)
650 MHz, full power bandwidth (G = +2, VO = 2 V p-p)
Slew rate: 4100 V/µs
0.1% settling time: 12 ns
Excellent video specifications
0.1 dB flatness: 170 MHz
Differential gain: 0.02%
Differential phase: 0.01°
Output overdrive recovery: 22 ns
Low noise: 1.6 nV/√Hz input voltage noise
Low distortion over wide bandwidth
75 dBc SFDR @ 20 MHz
62 dBc SFDR @ 50 MHz
Input offset voltage: 1 mV typ
High output current: 100 mA
Wide supply voltage range: 4.5 V to 12 V
Supply current: 13.5 mA
Power-down mode
APPLICATIONS
Professional video
High speed instrumentation
Video switching
IF/RF gain stage
CCD imaging
GENERAL DESCRIPTION
The AD8000 is an ultrahigh speed, high performance, current
feedback amplifier. Using ADI’s proprietary eXtra Fast Com-
plementary Bipolar (XFCB) process, the amplifier can achieve a
small signal bandwidth of 1.5 GHz and a slew rate of 4100 V/µs.
The AD8000 has low spurious-free dynamic range (SFDR) of
75 dBc @ 20 MHz and input voltage noise of 1.6 nV/√Hz. The
AD8000 can drive over 100 mA of load current with minimal
distortion. The amplifier can operate on +5 V to ±6 V. These
specifications make the AD8000 ideal for a variety of applica-
tions, including high speed instrumentation.
With a differential gain of 0.02%, differential phase of 0.01°, and
0.1 dB flatness out to 170 MHz, the AD8000 has excellent video
specifications, which ensure that even the most demanding
video systems maintain excellent fidelity.
CONNECTION DIAGRAMS POWER DOWNFEEDBACK–IN+INOUTPUT
NC = NO CONNECT
Figure 1. 8-Lead AD8000, 3 mm × 3 mm LFCSP (CP-8-2)
FEEDBACK
–IN
+IN
–VS
POWER DOWN
+VS
OUTPUT
NC = NO CONNECT
Figure 2. 8-Lead AD8000 SOIC/EP (RD-8-1)
NORMALIZE
GAIN (dB)
FREQUENCY (MHz)100101000
Figure 3. Large Signal Frequency Response
The AD8000 power-down mode reduces the supply current to
1.3 mA. The amplifier is available in a tiny 8-lead LFCSP pack-
age, as well as in an 8-lead SOIC package. The AD8000 is rated
to work over the extended industrial temperature range (−40°C
to +125°C). A triple version of the AD8000 (AD8003) is under-
development.
TABLE OF CONTENTS
Specifications with ±5 V Supply.....................................................3
Specifications with +5 V Supply.....................................................4
Absolute Maximum Ratings............................................................5
Thermal Resistance......................................................................5
ESD Caution..................................................................................5
Typical Performance Characteristics.............................................6
Test Circuits.....................................................................................13
Applications.....................................................................................14
Circuit Configurations...............................................................14
Video Line Driver.......................................................................14
Low Distortion Pinout...............................................................15
Exposed Paddle...........................................................................15
Printed Circuit Board Layout...................................................15
Signal Routing.............................................................................15
Power Supply Bypassing............................................................15
Grounding...................................................................................16
Outline Dimensions.......................................................................17
Ordering Guide..........................................................................17
REVISION HISTORY
1/05—Rev. 0: Initial Version
SPECIFICATIONS WITH ±5 V SUPPLY
At TA = 25°C, VS = ±5 V, RL = 150 Ω, Gain = +2, RF = RG = 432 Ω, unless otherwise noted. Exposed paddle should be connected to ground.
Table 1.
SPECIFICATIONS WITH +5 V SUPPLY
At TA = 25°C, VS = +5 V, RL = 150 Ω, Gain = +2, RF = RG = 432 Ω, unless otherwise noted. Exposed paddle should be connected to ground.
Table 2.
ABSOLUTE MAXIMUM RATINGS
Table 3.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is speci-
fied for device soldered in the circuit board for surface-mount
packages.
Table 4. Thermal Resistance
Maximum Power Dissipation
The maximum safe power dissipation for the AD8000 is limited
by the associated rise in junction temperature (TJ) on the die. At
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit can change the stresses that the package
exerts on the die, permanently shifting the parametric perform-
ance of the AD8000. Exceeding a junction temperature of
175°C for an extended period of time can result in changes
in silicon devices, potentially causing degradation or loss of
functionality.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the die
due to the AD8000 drive at the output. The quiescent power is
the voltage between the supply pins (VS) times the quiescent
current (IS).
PD = Quiescent Power + (Total Drive Power – Load Power)
OUT
OUTSSDR–RIVP⎟⎟⎠⎜⎜⎝×+×=
RMS output voltages should be considered. If RL is referenced
to −VS, as in single-supply operation, the total drive power is
VS × IOUT. If the rms signal levels are indeterminate, consider
the worst case, when VOUT = VS/4 for RL to midsupply. )SDRIVP4+×=
In single-supply operation with RL referenced to −VS, worst case
is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA.
Also, more metal directly in contact with the package leads and
exposed paddle from metal traces, through holes, ground, and
power planes reduces θJA.
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the exposed paddle
SOIC (80°C/W) and the LFCSP (93°C/W) package on a JEDEC
standard 4-layer board. θJA values are approximations.
XIM
POW
ISSIPA
TION
AMBIENT TEMPERATURE (°C)
–40
Figure 4. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy elec-
TYPICAL PERFORMANCE CHARACTERISTICS
NORMALIZE
GAIN (dB)
FREQUENCY (MHz)11001000
05321-006–7
Figure 5. Small Signal Frequency Response vs. Various Gains
NORMALIZE
GAIN (dB)
FREQUENCY (MHz)11001000
05321-007–7
Figure 6. Small Signal Frequency Response vs. Various Gains
NORMALIZE
GAIN (dB)
FREQUENCY (MHz)100101000
Figure 7. Large Signal Frequency Response vs. Various Gains
GAIN (
FREQUENCY (MHz)11001000
Figure 8. Small Signal Frequency Response vs. RF
GAIN (
FREQUENCY (MHz)11001000
Figure 9. Large Signal Frequency Response vs. RF
TRANS
IMP
DANCE
(k
FREQUENCY (MHz)
SE (
egrees)
200
Figure 10. Transimpedance and Phase vs. Frequency
GAIN (
FREQUENCY (MHz)
0.11101001000
Figure 11. Small Signal Frequency Response vs. Supply Voltage
GAIN (
FREQUENCY (MHz)11001000
Figure 12. Small Signal Frequency Response vs. Supply Voltage
GAIN (
FREQUENCY (MHz)10010
Figure 13. 0.1 dB Flatness
GAIN (
FREQUENCY (MHz)11001000
Figure 14. Small Signal Frequency Response vs. Temperature
GAIN (
FREQUENCY (MHz)11001000
Figure 15. Small Signal Frequency Response vs. Temperature
GAIN (
FREQUENCY (MHz)11001000
Figure 16. Large Signal Frequency Response vs. Temperature
GAIN (
FREQUENCY (MHz)11001000
Figure 17. Large Signal Frequency Response vs. Various Outputs
DISTORTION (dBc)
–40
FREQUENCY (MHz)10100
Figure 18. Harmonic Distortion vs. Frequency
DISTORTION (dBc)
–40
FREQUENCY (MHz)10100
Figure 19. Harmonic Distortion vs. Frequency
DISTORTION (
Bc)
–50
FREQUENCY (MHz)10100
Figure 20. Harmonic Distortion vs. Frequency
DISTORTION (dBc)
–20
FREQUENCY (MHz)10100
Figure 21. Harmonic Distortion vs. Frequency
DISTORTION (dBc)
–50
FREQUENCY (MHz)10100
Figure 22. Harmonic Distortion vs. Frequency
DISTORTION (dBc)
FREQUENCY (MHz)
–2010100
Figure 23. Harmonic Distortion vs. Frequency
DISTORTION (dBc)
–20
FREQUENCY (MHz)10100
Figure 24. Harmonic Distortion vs. Frequency
DISTORTION (dBc)
FREQUENCY (MHz)
–2010100
Figure 25. Harmonic Distortion vs. Frequency
DISTORTION (dBc)
FREQUENCY (MHz)
–2010100
Figure 26. Harmonic Distortion vs. Frequency
DISTORTION (dBc)
FREQUENCY (MHz)
–2010100
Figure 27. Harmonic Distortion vs. Frequency
DISTORTION (
Bc)
–40
FREQUENCY (MHz)10100
Figure 28. Harmonic Distortion vs. Frequency
DISTORTION (
Bc)
–50
FREQUENCY (MHz)10100
Figure 29. Harmonic Distortion vs. Frequency
IMP
DANCE
FREQUENCY (MHz)0.1101001000
Figure 30. Output Impedance vs. Frequency
ESPON
SE (5101520253035404550
TIME (ns)
Figure 31. Small Signal Transient Response
RR (dB)
FREQUENCY (MHz)0.110100
–55
Figure 32. Power Supply Rejection Ratio (PSRR) vs. Frequency
CMRR (dB)
FREQUENCY (MHz)0.1101001000
–55
Figure 33. Common-Mode Rejection Ratio vs. Frequency
ESPON
SE (
TIME (ns)
05321-066–0.1755101520253035404550
Figure 34. Small Signal Transient Response

Partno	Mfg	Dc	Qty	Available	Descript
AD8000YRDZ	AD	N/a	1	avai	1.5 GHz, Ultra-High Speed Op Amp with Power-Down
AD8000YCPZ-REEL7 \|AD8000YCPZREEL7	ADI	N/a	2	avai	1.5 GHz, Ultra-High Speed Op Amp with Power-Down
AD8000YRDZ-REEL \|AD8000YRDZREEL	AD	N/a	2500	avai	1.5 GHz, Ultra-High Speed Op Amp with Power-Down