AD7545 ,12-Bit/ Buffered/ Multiplying CMOS DACSPECIFICATIONS REF OUT1V = +5 V V = +15 VDD DD Limits Limits1 1Parameter Version T = + 25CT T T ..
AD7545ABQ ,CMOS 12-Bit Buffered Multiplying DACSPECIFICATIONS (V = 10 V, V = O V, AGND = DGND unless otherwise noted)REF OUT1V = +5 V V = +15 VD ..
AD7545ACQ ,CMOS 12-Bit Buffered Multiplying DACGENERAL DESCRIPTIONThe AD7545A, a 12-bit CMOS multiplying DAC with internaldata latches, is an impr ..
AD7545AKN ,CMOS 12-Bit Buffered Multiplying DACSPECIFICATIONS (V = 10 V, V = O V, AGND = DGND unless otherwise noted)REF OUT1V = +5 V V = +15 VD ..
AD7545AKP ,CMOS 12-Bit Buffered Multiplying DACGENERAL DESCRIPTIONThe AD7545A, a 12-bit CMOS multiplying DAC with internaldata latches, is an impr ..
AD7545AKR ,CMOS 12-Bit Buffered Multiplying DACSPECIFICATIONS (V = 10 V, V = O V, AGND = DGND unless otherwise noted)REF OUT1V = +5 V V = +15 VD ..
ADG633YRUZ ,CMOS ±5 V/5 V/3 V Triple SPDT SwitchSPECIFICATIONS1DUAL SUPPLY (V = +5 V ±10%, V = –5 V ±10%, GND = 0 V, unless otherwise noted.)DD SSB ..
ADG633YRUZ-REEL7 ,CMOS ±5 V/5 V/3 V Triple SPDT SwitchGENERAL DESCRIPTIONPRODUCT HIGHLIGHTSThe ADG633 is a low voltage CMOS device comprising three 1. Si ..
ADG636YRU ,1pC Charge Injection, 100pA Leakage CMOS Dual SPDT SwitchGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG636 is a monolithic device, comprising two independent ..
ADG659YRU ,3V/5V ± 5V CMOS 4/8 Channel Analog MultiplexersSPECIFICATIONS: DUAL SUPPLY 1VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted. ..
ADG661BRU ,LC2MOS Precision 5 V Quad SPST SwitchesCHARACTERISTICSt 150 ns typ R = 300 Ω, C = 35 pF;ON L L275 ns max V = ±3 V; Test Circuit 4St 55 ns ..
ADG662BRU ,LC2MOS Precision 5 V Quad SPST Switchesapplications. Inherent in the design is low chargesignal switching. injection for minimum transient ..
AD7545
12-Bit/ Buffered/ Multiplying CMOS DAC
SPECIFICATIONS REF OUT1V = +5 V V = +15 VDD DD Limits Limits1 1Parameter Version T = + 25CT T T = + 25CT T Units Test Conditions/CommentsA MIN, MAX A MIN, MAXSTATIC PERFORMANCEResolution All 12 12 12 12 BitsJ, A, S ±2 ±2 ±2 ±2 LSB maxK, B, T ±1 ±1 ±1 ±1 LSB maxL, C, U ±1/2 ±1/2 ±1/2 ±1/2 LSB maxGL, GC, GU ±1/2 ±1/2 ±1/2 ±1/2 LSB maxDifferential Nonlinearity J, A, S ±4 ±4 ±4 ±4 LSB max 10-Bit Monotonic T to TMIN MAXK, B, T ±1 ±1 ±1 ±1 LSB max 12-Bit Monotonic T to TMIN MAXL, C, U ±1 ±1 ±1 ±1 LSB max 12-Bit Monotonic T to TMIN MAXGL, GC, GU ±1 ±1 ±1 ±1 LSB max 12-Bit Monotonic T to TMIN MAX2Gain Error (Using Internal RFB) J, A, S ±20 ±20 ±25 ±25 LSB max DAC Register Loaded withK, B, T ±10 ±10 ±15 ±15 LSB max 1111 1111 1111L, C, U ±5 ±6 ±10 ±10 LSB max Gain Error Is Adjustable UsingGL, GC, GU ±1 ±2 ±6 ±7 LSB max the Circuits of Figures 4, 5, and 63Gain Temperature Coefficient∆ Gain/∆ Temperature All ±5 ±5 ±10 ±10 ppm/°C max Typical Value is 2 ppm/°C for V = +5 VDD3DC Supply Rejection∆ Gain/∆ V All 0.015 0.03 0.01 0.02 % per % max ∆ V = ±5%DD DDOutput Leakage Current at OUT1 J, K, L, GL 10 50 10 50 nA max DB0–DB11 = 0 V; WR, CS = 0 VA, B, C, GC 10 50 10 50 nA maxS, T, U, GU 10 200 10 200 nA maxDYNAMIC PERFORMANCE3Current Settling Time All 2 2 2 2 µ s max To 1/2 LSB. OUT1 Load = 100 Ω . DACOutput Measured from Falling Edge ofWR, CS = 0.3Propagation Delay (from DigitalInput Change to 90%4of Final Analog Output) All 300 – 250 – ns max OUT1 Load = 100 Ω , C = 13 pFEXTDigital-to-Analog Glitch Inpulse All 400 – 250 – nV sec typ V = AGNDREF5AC FeedthroughAt OUT1 All 5 5 5 5 mV p-p typ V = ±10 V, 10 kHz SinewaveREFREFERENCE INPUTInput Resistance All 7 7 7 7 kΩ min Input Resistance TC = –300 ppm/°C typ(Pin 19 to GND) 25 25 25 25 kΩ max Typical Input Resistance = 11 kΩANALOG OUTPUT3Output CapacitanceC All 70 70 70 70 pF max DB0–DB11 = 0 V, WR, CS = 0 VOUT1C 200 200 200 200 pF max DB0–DB11 = V , WR, CS = 0 VOUT1 DDDIGITAL INPUTSInput High VoltageV All 2.4 2.4 13.5 13.5 V minIHInput Low VoltageV All 0.8 0.8 1.5 1.5 V maxIL6Input CurrentI All ±1 ±10 ±1 ±10 µ A max V = 0 or VIN IN DD3Input CapacitanceDB0–DB11 All 5 5 5 5 pF max V = 0INWR, CS All 20 20 20 20 pF max V = 0IN7SWITCHING
