AD586 ,High Precision 5 V Referenceapplications.Edges: A diamond saw is used to separate wafers into dice thus providing perpendicular ..
AD586AR ,High Precision 5 V ReferenceFEATURESLaser Trimmed to High Accuracy:5.000 V 62.0 mV (M Grade)Trimmed Temperature Coefficient:2 p ..
AD586AR-REEL ,High Precision 5 V Referencespecifications.references.The AD586J, AD586K, AD586L, and AD586M are specified foroperation from 0° ..
AD586ARZ ,High Precision 5 V ReferenceSPECIFICATIONSA INAD586K/AD586J AD586A AD586L/AD586B AD586M AD586S AD586TParameter Min Typ Max Min ..
AD586ARZ ,High Precision 5 V ReferenceSpecifications subject to change without notice.ABSOLUTE MAXIMUM RATINGS* CONNECTION DIAGRAMV to Gr ..
AD586BR ,High Precision 5 V Referenceapplications.Edges: A diamond saw is used to separate wafers into dice thus providing perpendicular ..
AD9814JR ,Complete 14-Bit CCD/CIS Signal Processorfeatures a 3-channel architecture de-3-Channel Operation Up to 10 MSPS signed to sample and conditi ..
AD9814JR ,Complete 14-Bit CCD/CIS Signal ProcessorSpecifications.2The Gain Error specification is dominated by the tolerance of the internal differen ..
AD9814JRRL ,Low Power 14-Bit, 3-Channel CCD Signal Processor with Progammable Serial Interface and Byte-Wide Data Output FormatSPECIFICATIONS (T to T , AVDD = +5 V, DRVDD = +5 V, 3-Channel CDS Mode, f = 6 MHz, f = f =MIN MAX A ..
AD9814KR ,Complete 14-Bit CCD/CIS Signal ProcessorSPECIFICATIONS (T to T , AVDD = +5 V, DRVDD = +5 V)MIN MAXParameter Symbol Min Typ Max UnitsCLOCK P ..
AD9814KR ,Complete 14-Bit CCD/CIS Signal ProcessorAPPLICATIONScally consumes 330 mW of power, and is packaged in a 28-leadFlatbed Document ScannersSO ..
AD9814KR ,Complete 14-Bit CCD/CIS Signal ProcessorSPECIFICATIONS (T to T , AVDD = +5 V, DRVDD = +5 V, 3-Channel CDS Mode, f = 6 MHz, f = f =MIN MAX A ..
AD586
High Precision 5 V Reference
FUNCTIONAL BLOCK DIAGRAM
GROUND
VINNOISE REDUCTION
VOUT
TRIM
NOTE: PINS 1, 3, AND 7 ARE INTERNAL TEST POINTS.
MAKE NO CONNECTIONS TO THESE POINTS.REV.D
High Precision
5 V Reference
FEATURES
Laser Trimmed to High Accuracy:
5.000 V �2.0mV (M Grade)
Trimmed Temperature Coefficient:ppm/�C Max, 0�C to 70�C (M Grade)ppm/�C Max, –40�C to +85�C (B and L Grades)ppm/�C Max, –55�C to +125�C (T Grade)
Low Noise, 100nV/√Hz
Noise Reduction Capability
Output Trim Capability
MIL-STD-883-Compliant Versions Available
Industrial Temperature Range SOICs Available
Output Capable of Sourcing or Sinking 10mA
PRODUCT DESCRIPTIONThe AD586 represents a major advance in the state-of-the-art in
monolithic voltage references. Using a proprietary ion-implanted
buried Zener diode and laser wafer trimming of high stability
thin-film resistors, the AD586 provides outstanding perfor-
mance at low cost.
The AD586 offers much higher performance than most otherV references. Because the AD586 uses an industry standard
pinout, many systems can be upgraded instantly with the AD586.
The buried Zener approach to reference design provides lower
noise and drift than bandgap voltage references. The AD586
offers a noise reduction pin which can be used to further reduce
the noise level generated by the buried Zener.
The AD586 is recommended for use as a reference for 8-, 10-,
12-, 14-, or 16-bit D/A converters which require an external
precision reference. The device is also ideal for successive
approximation or integrating A/D converters with up to 14 bits
of accuracy and, in general, can offer better performance than
the standard on-chip references.
The AD586J, K, L, and M are specified for operation from 0°C
to 70°C, the AD586A and B are specified for –40°C to +85°C
operation, and the AD586S and T are specified for –55°C to
+125°C operation. The AD586J, K, L, and M are available in
an 8-lead plastic DIP. The AD586J, K, L, A, and B are avail-
able in an 8-lead plastic surface mount small outline (SO)
package. The AD586J, K, L, S, and T are available in an 8-lead
cerdip package.
PRODUCT HIGHLIGHTSLaser trimming of both initial accuracy and temperature
coefficients results in very low errors over temperature with-
out the use of external components. The AD586M has a
maximum deviation from 5.000V of ±2.45mV between
0°C and 70°C, and the AD586T guarantees ±7.5mV maxi-
mum total error between –55°C and +125°C.For applications requiring higher precision, an optional fine-
trim connection is provided.Any system using an industry standard pinout reference can
be upgraded instantly with the AD586.Output noise of the AD586 is very low, typically 4µV p-p. A
noise reduction pin is provided for additional noise filtering
using an external capacitor.The AD586 is available in versions compliant with MIL-
STD-883. Refer to the Analog Devices Military Products
Databook or current AD586/883B data sheet for detailed
specifications.
AD586–SPECIFICATIONS(@ TA = 25�C, VIN = 15 V unless otherwise noted.)NOTES
1Maximum output voltage drift is guaranteed for all packages and grades. Cerdip packaged parts are also 100°C production tested.
2Lower row shows specified performance for A and B grades.
3The operating temperature range is defined as the temperatures extremes at which the device will still function. Parts may deviate from their specified performance outside their
specified temperature range.
Specifications subject to change without notice.
Specifications in boldface are rested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels. All min and max specifica-
tions are guaranteed, although only those shown in boldface are tested on all production units unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS*VIN to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
PowerDissipation (25°C) . . . . . . . . . . . . . . . . . . . . . 500 mW
Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temp (Soldering,10sec) . . . . . . . . . . . . . . . . . . .300°C
Package Thermal Resistance
θJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22°C/W
θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W
Output Protection: Output safe for indefinite short to ground
or VIN.
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
CONNECTION DIAGRAM
(Top View)
The following specifications are tested at the dice level for AD586JCHIPS. These die are probed at 25�C
only. (TA = 25�C, VIN = 15 V unless otherwise noted.)DlE SPECIFlCATIONSNOTESBoth VOUT pads should be connected to the output.
Die Thickness: The standard thickness of Analog Devices Bipolar dice is 24 mils ± 2 mils.
Die Dimensions: The dimensions given have a tolerance of ±2 mils.
Backing: The standard backside surface is silicon (not plated). Analog Devices does notrecommend gold-backed dice for most applications.
Edges: A diamond saw is used to separate wafers into dice thus providing perpendicularedges halfway through the die.
In contrast to scribed dice, this technique provides a more uniform die shape and size. The
perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape
and size simplifies substrate design and die attach.
Top Surface: The standard top surface of the die is covered by a layer of glassivation. Allareas are covered except bonding pads and scribe lines.
Surface Metalization: The metalization to Analog Devices bipolar dice is aluminum.Minimum thickness is 10,000Å.
Bonding Pads: All bonding pads have a minimum size of 4 mils by 4 mils. The passivationwindows have 3.5 mils by 3.5 mils minimum.
ORDERING GUIDE*For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military Products Databook or
current AD586/883B data sheet.
DIE LAYOUTDie Size: 0.096 � 0.061 Inches
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD586 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
AD586
THEORY OF OPERATIONThe AD586 consists of a proprietary buried Zener diode refer-
ence, an amplifier to buffer the output and several high stability
thin-film resistors as shown in the block diagram in Figure 1.
This design results in a high precision monolithic 5V output
reference with initial offset of 2.0mV or less. The temperature
compensation circuitry provides the device with a temperature
coefficient of under 2 ppm/°C.
Using the bias compensation resistor between the Zener output
and the noninverting input to the amplifier, a capacitor can be
added at the NOISE REDUCTION pin (Pin 8) to form a low-
pass filter and reduce the noise contribution of the Zener to
the circuit.
GROUND
VINNOISE REDUCTION
VOUT
TRIM
NOTE: PINS 1, 3, AND 7 ARE INTERNAL TEST POINTS.
MAKE NO CONNECTIONS TO THESE POINTS.Figure 1. Functional Block Diagram
APPLYING THE AD586The AD586 is simple to use in virtually all precision refer-
ence applications. When power is applied to Pin 2 and Pin 4
is grounded, Pin 6 provides a 5V output. No external compo-
nents are required; the degree of desired absolute accuracy is
achieved simply by selecting the required device grade. The
AD586 requires less than 3mA quiescent current from an
operating supply of 12V or 15V.
An external fine trim may be desired to set the output level to
exactly 5.000V (calibrated to a main system reference). System
calibration may also require a reference voltage that is slightly
different from 5.000V, for example, 5.12V for binary applica-
tions. In either case, the optional trim circuit shown in Figure 2
can offset the output by as much as 300mV, if desired, with
minimal effect on other device characteristics.
Figure 2. Optional Fine Trim Configuration
NOISE PERFORMANCE AND REDUCTIONThe noise generated by the AD586 is typically less than 4 µV p-p
over the 0.1Hz to 10Hz band. Noise in a 1MHz bandwidth is
approximately 200µV p-p. The dominant source of this noise is
the buried Zener which contributes approximately 100nV/√Hz. In
comparison, the op amp’s contribution is negligible. Figure 3
shows the 0.1Hz to 10Hz noise of a typical AD586. The noise
measurement is made with a bandpass filter made of a 1-pole
high-pass filter with a corner frequency at 0.1Hz and a 2-pole
low-pass filter with a corner frequency at 12.6Hz to create a
filter with a 9.922Hz bandwidth.
If further noise reduction is desired, an external capacitor may
be added between the NOISE REDUCTION pin and ground as
shown in Figure 2. This capacitor, combined with the 4kΩ RS
and the Zener resistances form a low-pass filter on the output of
the Zener cell. A 1µF capacitor will have a 3dB point at 12Hz,
and it will reduce the high frequency (to 1MHz) noise to about
160µV p-p. Figure 4 shows the 1MHz noise of a typical AD586
both with and without a 1µF capacitor.
Figure 3.0.1Hz to 10Hz Noise
Figure 4.Effect of 1µF Noise Reduction Capacitor on
Broadband Noise
TURN-ON TIMEUpon application of power (cold start), the time required for the
output voltage to reach its final value within a specified error
band is defined as the turn-on settling time. Two components
normally associated with this are: the time for the active circuits
to settle, and the time for the thermal gradients on the chip to
stabilize. Figure 5 shows the turn-on characteristics of the
AD586. It shows the settling to be about 60µs to 0.01%. Note
the absence of any thermal tails when the horizontal scale is
expanded to lms/cm in Figure 5b.
Output turn-on time is modified when an external noise reduc-
tion capacitor is used. When present, this capacitor acts as an
additional load to the internal Zener diode’s current source,
resulting in a somewhat longer turn-on time. In the case of a
1 µF capacitor, the initial turn-on time is approximately 400 ms
to 0.01% (see Figure 5c).
a. Electrical Turn-On
b. Extended Time Scale
DYNAMIC PERFORMANCEThe output buffer amplifier is designed to provide the AD586
with static and dynamic load regulation superior to less com-
plete references.
Many A/D and D/A converters present transient current loads
to the reference, and poor reference response can degrade the
converter’s performance.
Figure 6 displays the characteristics of the AD586 output ampli-
fier driving a 0mA to 10mA load.
Figure 6a. Transient Load Test Circuit
Figure 6b. Large-Scale Transient Response
Figure 6c. Fine-Scale Setting for Transient Load
AD586Centigrade; i.e., ppm/°C. However, because of nonlinearities in
temperature characteristics which originated in standard Zener
references (such as “S” type characteristics), most manufactur-
ers have begun to use a maximum limit error band approach to
specify devices. This technique involves the measurement of the
output at three or more different temperatures to specify an
output voltage error band.
Figure 9 shows the typical output voltage drift for the AD586L
and illustrates the test methodology. The box in Figure 9 is
bounded on the sides by the operating temperature extremes,
and on the top and the bottom by the maximum and minimum
output voltages measured over the operating temperature range.
The slope of the diagonal drawn from the lower left to the upper
right corner of the box determines the performance grade of
the device.
Figure 9. Typical AD586L Temperature Drift
Each AD586J, K and L grade unit is tested at 0°C, 25°C, and
70°C. Each AD586SQ and TQ grade unit is tested at –55°C,
+25°C, and +125°C. This approach ensures that the variations
of output voltage that occur as the temperature changes within
the specified range will be contained within a box whose diago-
nal has a slope equal to the maximum specified drift. The
position of the box on the vertical scale will change from device
to device as initial error and the shape of the curve vary. The
maximum height of the box for the appropriate temperature
range and device grade is shown in Table I. Duplication of these
results requires a combination of high accuracy and stable tem-
perature control in a test system. Evaluation of the AD586 will
produce a curve similar to that in Figure 9, but output readings
may vary depending on the test methods and equipment utilized.
Table I.Maximum Output Change in mVIn some applications, a varying load may be both resistive and
capacitive in nature, or the load may be connected to the
AD586 by a long capacitive cable.
Figure 7 displays the output amplifier characteristics driving a
1000 pF, 0 to 10 mA load.
Figure 7a. Capacitive Load Transient Response Test Circuit
Figure 7b. Output Response with Capacitive Load
LOAD REGULATIONThe AD586 has excellent load regulation characteristics. Figure
8 shows that varying the load several mA changes the output by
a few µV. The AD586 has somewhat better load regulation
performance sourcing current than sinking current.
Figure 8. Typical Load Regulation Characteristics
TEMPERATURE PERFORMANCEThe AD586 is designed for precision reference applications
where temperature performance is critical. Extensive tempera-
ture testing ensures that the device’s high level of performance is
maintained over the operating temperature range.
Some confusion exists in the area of defining and specifying
