IR21531S ,Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-lead SOIC package and different phasePreliminary Data Sheet No. PD60131 revMIR21531(D)(S) & (PbF)SELF-OSCILLATING HALF-BRIDGE DRIVER
IR21531STRPBF , SELF-OSCILLATING HALF-BRIDGE DRIVER
IR2153D ,Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package with bootstrap diodeFeaturesProduct SummaryIntegrated 600V half-bridge gate driver•V 600V max.15.6V zener clamp on Vcc ..
IR2153DPBF ,Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package with bootstrap diodeData Sheet No. PD60062 revO(NOTE:For new designs, we recommendIR’s new product IRS2153D)IR2153(D)(S ..
IR2153PBF ,Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-lead PDIP packageFeaturesProduct SummaryIntegrated 600V half-bridge gate driver•V 600V max.15.6V zener clamp on Vcc ..
IR2153S ,Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-lead SOIC packageFeaturesProduct SummaryIntegrated 600V half-bridge gate driver•V 600V max.15.6V zener clamp on Vcc ..
IRU3021MCW ,5 Bit Prog SynchBuck CIC w/3 LDO Controllers w/FET in a 28-Pin SOIC(WB) packageapplications. The IRU3021M usesLinear Regulator Controller On-Board for 1.5V N-channel MOSFET as pa ..
IRU3021MCWTR ,5 Bit Prog SynchBuck CIC w/3 LDO Controllers w/FET in a 28-Pin SOIC(WB) packageAPPLICATIONSTotal Power Solution for next generation Intelprocessor applicationTYPICAL APPLICATION5 ..
IRU3027 ,5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC WITH TRIPLE LDO CONTROLLERAPPLICATIONSTotal power solution for next generation Intelprocessor applicationAMD K7 Low Cost Solu ..
IRU3027CW ,5 Bit Prog SynchBuck CIC with 3 LDO Controllers in a 28-Pin SOIC(WB) packagefeatures loss-less currentSoft-Start sensing for both switchers by using the RDS(ON) of theHigh cur ..
IRU3027CW ,5 Bit Prog SynchBuck CIC with 3 LDO Controllers in a 28-Pin SOIC(WB) packageapplications. The IRU3027 is designed toLinear Regulator Controller On-Board for 1.5V use either bi ..
IRU3027CWTR ,5 Bit Prog SynchBuck CIC with 3 LDO Controllers in a 28-Pin SOIC(WB) packageAPPLICATIONSTotal power solution for next generation Intelprocessor applicationAMD K7 Low Cost Solu ..
98-0086-IR21531-IR21531D-IR21531S
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-lead SOIC package and different phase
FeaturesProduct SummaryIntegrated 600V half-bridge gate driver•V 600V max.OFFSET15.6V zener clamp on Vcc•True micropower start up•Duty Cycle 50%Tighter initial deadtime control•Low temperature coefficient deadtime•T /T 80/40nsr pShutdown feature (1/6th Vcc) on C pin• TIncreased undervoltage lockout Hysteresis (1V)•V 15.6VclampLower power level-shifting circuit•Constant LO, HO pulse widths at startup•Deadtime (typ.) 0.6 µsLower di/dt gate driver for better noise immunity•Low side output in phase with RT•PackagesInternal 50nsec (typ.) bootstrap diode (IR21531D)•Excellent latch immunity on all inputs and outputs•ESD protection on all leads•Also available LEAD-FREE•Description8 Lead PDIP 8 Lead SOICThe IR21531(D)(S) are an improved version of thepopular IR2155 and IR2151 gate driver ICs, and in-corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standardCMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdownfeature has been designed into the C pin, so that both gate driver outputs can be disabled using a low voltageTcontrol signal. In addition, the gate driver output pulse widths are the same once the rising undervoltagelockout threshold on V has been reached, resulting in a more stable profile of frequency vs time atCCstartup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed tomaximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.Typical ConnectionsIR21531(S) IR21531(D)600V600VMAXMAXVCC VBVCC VBHOHORT VSRT VSCT LOCT LOShutdown COMShutdown COM 1Downloaded from: http://www.ic-phoenix.com/stock/IR21531(D)(S) & (PbF)Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance andpower dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. UnitsV High side floating supply voltage -0.3 625BV High side floating supply offset voltage V - 25 V + 0.3S B BV High side floating output voltage V - 0.3 V + 0.3HO S BVV Low side output voltage -0.3 V + 0.3LO CCV R pin voltage -0.3 V + 0.3RT T CCV C pin voltage -0.3 V + 0.3CT T CCI Supply current (note 1) — 25CCmAI R pin current -5 5RT TdV /dt Allowable offset voltage slew rate -50 50 V/nssP Maximum power dissipation @ T ≤ +25°C (8 Lead DIP) — 1.0D AW(8 Lead SOIC) — 0.625Rth Thermal resistance, junction to ambient (8 Lead DIP) — 125JA°C/W(8 Lead SOIC) — 200T Junction temperature -55 150JT Storage temperature -55 150 °CST Lead temperature (soldering, 10 seconds) — 300LRecommended Operating ConditionsFor proper operation the device should be used within the recommended conditions. Symbol Definition Min. Max. UnitsV High side floating supply voltage V - 0.7 VBS CC CLAMPVV Steady state high side floating supply offset voltage -3.0 (note 2) 600SV Supply voltage 10 VCC CLAMPI Supply current (note 3) 5 mACCT Junction temperature -40 125 °CJNote 1: This IC contains a zener clamp structure between the chip V and COM which has a nominal breakdownCCvoltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power sourcegreater than the V specified in the
