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9601DMQB
Retriggerable One Shot
FEA TURES Single supply with programming operation down
to 2.5V Low power CMOS technology 1 mA active current typical
-5
A standby current (typical) at 3.0V x16 memory organization 128x16 (93LCS56) 256x16 (93LCS66) Software write protection of user defined memory
space Self timed erase and write cycles Automatic ERAL before WRAL Power on/off data protection Industry standard 3-wire serial I/O Device status signal during E/W Sequential READ function 1,000,000 E/W cycles guaranteed Data retention > 200 years 8-pin PDIP/SOIC and 14-pin SOIC packages Temperature ranges supported Commercial (C): 0˚Cto +70˚C Industrial (I): -40˚Cto +85˚C
BLOCK DIAGRAM
DESCRIPTIONThe Microchip T echnology Inc. 93LCS56/66 are low volt-
age Serial Electrically Erasable PROMs with memory
capacities of 2K bits/4K bits respectively. A write protect
register is included in order to provide a user defined
region of write protected memory. All memory locations
greater than or equal to the address placed in the write
protect register will be protected from any attempted write
or erase operation. It is also possible to protect the
address in the write protect register permanently by using
a one time only instruction (PRDS). Any attempt to alter
data in a register whose address is equal to or greater
than the address stored in the protect register will be
aborted. Advanced CMOS technology makes this device
ideal for low power non-volatile memory applications.
MEMORY
ARRAY
ADDRESS
DECODER
VCC VSS
DATA REGISTER DO
MODE
DECODE
LOGIC
CLOCK
GENERATOR
OUTPUT
BUFFER
CLK
PRE
ADDRESS
COUNTER
93LCS56/66
2K/4K 2.5V Microwire
Serial EEPROM with Software Write Protect
PACKAGE TYPES
93LCS56
93LCS66
93LCS56
93LCS66
93LCS56
93LCS66
SOICVCC
PRE
VSS
CLK
SOICVCC
PRE
VSS
CLK
VCC
PRE
VSS
CLK
DIP
