8TQ100 ,100V 8A Schottky Discrete Diode in a TO-220AC packageFeaturesThe 8TQ Schottky rectifier series has been optimized for lowCharacteristics 8TQ Unitsreve ..
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8TQ080-8TQ100-8TQ100S
80V 8A Schottky Discrete Diode in a TO-220AC package
International
19R Rectifier
Bulletin PD-20561 reV.D 07/03
8TQ...
8TQ...S
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
|F(AV) = 8 Amp
VR = 80 - 100V
Description! Features
. . . The 8TQ Schottky rectifier series has been optimized for low
Characteristics 8TQ Units reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° Cjunction
'F(AV) Rectangular 8 A temperature. Typical applications are in switching power
waveform supplies, converters, free-wheeling diodes, and reverse
battery protection.
VRRM range 80 -100 V .
. 175° C T, operation
I @tp= 5 us sine 850 A . High purity, high temperature epoxy encapsulation for
FSM enhanced mechanical strength and moisture resistance
- o . Low forward volta e dro
vF @8Apk,To=125 C 0.58 V . g . p
. High frequency operation
T ran e -55to175 "C . Guard ring for enhanced ruggedness and long term
J 9 reliability
Case Styles
TO-220
8TQ... S
International
8TQ... Series
Bulletin PD-20561 rev. D 07/03 IEER ReCTIflef
Voltage Ratings
Part number 8TQ080 8TQ100
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 80 100
Absolute Maximum Ratings
Parameters 8TQ Units Conditions
IFW) Max. Average Forward Current 8 A 50% duty cycle @ TC = 157° C, rectangularwave form
* See Fig. 5
- . . . Following any rated
IFSM Max. Peak One Cycle Non Repetitive 850 A 5ps Sine orsps Rect. pulse load condition and
Surge Current * See Fig. 7 230 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 7.50 mJ Tr- 25 "C, IAS-- 0.50Amps, L= 60 mH
la, Repetitive Avalanche Current 0.50 A Currentdecaying linearly to zero in 1 psec
Frequency limited by TJ max. v, = 1.5 xv,, typical
Electrical Specifications
Parameters 8TQ Units Conditions
I/m Max. Forward Voltage Drop (1) 0.72 V @ 8A T: = 25 ''C
* See Fig. 1 0.88 v @ 16A
0.58 V @ 8A TJ =125 "C
0.69 V @ 16A
I Ma . Re erse Leaka e C rrent 1 0.55 mA T = 25 "C
RM X 7 g u ( ) J VR = rated VR
*See Fig.2 7 mA Tr= 125°C
c, Max. Junction Capacitance 500 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25 "C
LS Typical Series Inductance 8 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 W us
(Rated VR)
(1) Pulse i/With < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 8TQ Units Conditions
T, Max. Junction Temperature Range -55to 175 ''C
Tsta Max. Storage Temperature Range -55 to 175 "C
RthJC Max. Thermal Resistance Junction 2.0 "C/W DC operation *See Fig. 4
to Case
Rthcs Typical Thermal Resistance, Case to 0.50 °CNV Mounting surface , smooth and greased
Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5) Kg-cm
Max. 12 (10) (lbf-in)
2
