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8EWS08S-8EWS08STR-8EWS08STRL-8EWS08STRR-8EWS12STRL-8EWS16S
800V 8A Std. Recovery Diode in a D-Pakpackage
International
IézR Rectifier
Bulletin 12108 rev.G 08/00
SAFEIR Series
8EWS..S
SURFACE MOUNTABLE
INPUT RECTIFIER DIODE
Description/Features
The 8EWS..S rectifier SAFEIR series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation technology
used has reliable operation up to 150° C junction
temperature.
The High Reverse Voltage range available allows
design of input stage primary rectification with
Outstanding Voltage Surge capability.
Typical applications are in input rectification and these
products are designed to be used with International
Rectifier Switches and Output RecWers which are
available in identical package outlines.
Output Current in Typical Applications
- v, < 1V@ 5A
23 IFSM = 200A
vRRM 800 to 1200v
Applications Single-phase Bridge Three-phase Bridge Units
NEMAFR-4orG10glassfabric-basedepoxy 1.6
with4oz(140pm)copper
AluminumlMS,RthcA=15''CA/V 2.8 A
AluminumlMSwith heatsink,RthCA= 5°CNV 6.5
TA-- 55°C,TJ =125"C,footprint:300mm2
Major Ratings and Characteristics
Characteristics 8EWS..S Units
IRAV) Sinusoidal 8 A
waveform
VRRM Range(*) 800 to1200 v
IFSM 200 A
VF @5A,TJ=25°C 1.0 V
To -55to150 ''C
C) for higher voltage up to 1600V contact factory
Package Outline
TO-252AA (D-Pak)
8EWS..S SAFEIR Series International
Bulletin 12108 rev. G 08/00 let Rectifier
Voltage Ratings
VRRM, maximum VRSM, maximum non repetitive |RRM
Part Number peakreverse voltage peakreverse voltage 150°C
V V mA
8EWS08S 800 900
8EWS1OS 1000 1100 0.5
8EWS12S 1200 1300
Absolute Maximum Ratings
Parameters 8EWS..S Units Conditions
IFW) Max.AverageForwardCurrent 8 A @Tc=95°C,180°conductionhalfsinewave
IFSM Max.PeakOneCycleNon-Repetitive 170 A 10msSinepulse,ratedVRRMapplied
SurgeCurrent 200 10ms Sine pulse, novoltagereapplied
Pt Max.l2tforfusing 144 A28 1OmsSinepulse,ratedVRRMapplied
204 10msSinepulse,novoltagereapplied
|th Maxlttortusing 2040 A245 t=0Ato10ms,novoltagereapplied
Electrical Specifications
Parameters 8EWS..S Units Conditions
VFM Max. Forward Voltage Drop 1.1 V @ 8A, T J = 25°C
rt Forward slope resistance 21.8 mn
T J = 150°C
Vmo) Threshold voltage 0.81 V
I Max. Reverse Leaka e Current 0.05 T = 25 "C
RM g mA J vR = rated vRRM
0.50 T J = 150 "C
Thermal-Mechanical Specifications
Parameters 8EWS..S Units Conditions
T, Max.JunctionTemperatureRange -55to150 "C
stg Max.StorageTemperatureRange -55to150 "C
SolderingTemperature 240 ''C for10seconds(1.6mmfromcase)
Rch Max.ThermalResistanceJunction 3 "CIW DCoperation
toCase
R,hJA Typ.ThermaIResistanceJunction 50 "CIW
toAmbient(PCBMount)**
wt ApproximateWeight 1(0.03) g(oz.)
T CaseStyle TO-252AA(D-PAK)
“When mounted on 1" square (650mm2) PCB ofFR-4 or G-10 material 4 oz (140pm) copper40°ClW
For recommended footprint and soldering techniques referto application note #AN-994
