74VHCT04AT Fast Delivery |IC PHOENIX CO.,LIMITED

74VHCT04AT ,HEX INVERTERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSupply Voltage -0.5 to +7.0 VVCCV DC Input Volta ..
74VHCT04ATTR ,HEX INVERTER74VHCT04AHEX INVERTER ■ HIGH SPEED: t = 4.7 ns (TYP.) at V = 5VPD CC■ LOW POWER DISSIPATION:I = 2 ..
74VHCT05AT ,HEX INVERTER (OPEN DRAIN)ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage -0.5 to +7.0 VCCV DC Input Volt ..
74VHCT08 ,Quad 2-Input AND Gate74VHC08 74VHCT08Quad2-InputANDGate#October199574VHC08 74VHCT08#Quad2-InputANDGateGeneralDescription
74VHCT08A ,QUAD 2-INPUT AND GATE74VHCT08AQUAD 2-INPUT AND GATE

74VHCT04AT
HEX INVERTER
74VHCT04A
HEX INVERTER
August 1999 HIGH SPEED:tPD =4.7ns (TYP.)at VCC =5V LOWPOWER DISSIPATION:
ICC =2 μA (MAX.)atTA =25oC COMPATIBLEWITH TTL OUTPUTS:
VIH =2V (MIN), VIL= 0.8V(MAX) POWERDOWN PROTECTIONON INPUTS&
OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE:
|IOH|=IOL=8 mA(MIN) BALANCED PROPAGATIONDELAYS:
tPLH≅ tPHL OPERATINGVOLTAGERANGE:
VCC (OPR)= 4.5Vto 5.5V PIN AND FUNCTION COMPATIBLE WITH SERIES04 IMPROVEDLATCH-UP IMMUNITY LOWNOISE: VOLP= 0.8V (Max.)
DESCRIPTION
The 74VHCT04Ais an advanced high-speed
CMOS HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiringC2 MOS technology.
The internal circuitis composedof3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protectionis provided on all inputs
and outputs and0to 7V can be accepted on
inputs with no regardto the supply voltage. This
device canbe usedto interface5Vto 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES:
74VHCT04AM 74VHCT04AT
(Micro Package)
(TSSOP Package)
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TRUTH TABLE
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION3,5,9,
11,13to6A Data Inputs4,6,8,
10,12to6Y Data Outputs GND Ground (0V) VCC Positive Supply Voltage
INPUT EQUIVALENT CIRCUIT
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
VCC Supply Voltage 4.5to5.5 V Input Voltage 0to5.5 V Output Voltage (see note1) 0to5.5 V Output Voltage (see note2) 0to VCC V
Top Operating Temperature -40to +85 oC
dt/dv Input Rise and Fall Time (see note3) (VCC =5.0± 0.5V) 0to20 ns/V
1)VCC=0V
2)HighorLow State
3)VINfrom0.8Vto2V
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC Supply Voltage -0.5to +7.0 V DC Input Voltage -0.5to +7.0 V DC Output Voltage (see note1) -0.5to +7.0 V DC Output Voltage (see note2) -0.5to VCC+ 0.5 V
IIK DC Input Diode Current -20 mA
IOK DC Output Diode Current ±20 mA DC Output Current ±25 mA
ICCor IGND DC VCCor Ground Current ±50 mA
Tstg Storage Temperature -65to +150 oC Lead Temperature (10 sec) 300 oC
AbsoluteMaximumRatingsarethosevalues beyond whichdamage tothedevicemayoccur. Functionaloperationunderthese condition isnot implied.
1)VCC=0V
2)HighorLow State
74VHCT04A
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SPECIFICATIONSSymbol Parameter Test Conditions Value Unit
VCC
(V) =25oC -40to85oC
Min. Typ. Max. Min. Max.
VIH High Level Input
Voltage
4.5to5.5 2 2 V
VIL Low Level Input
Voltage
4.5to5.5 0.8 0.8 V
VOH High Level Output
Voltage
4.5 IO=-50μA 4.4 4.5 4.4 V
4.5 IO=-8 mA 3.94 3.8
VOL Low Level Output
Voltage
4.5 IO=50 μA 0.0 0.1 0.1 V
4.5 IO=8 mA 0.36 0.44 Input Leakage Current 0 to5.5 VI= 5.5Vor GND ±0.1 ±1.0 μA
ICC Quiescent Supply
Current
5.5 VI =VCCor GND 2 20 μA
ΔICC Additional Worst Case
Supply Current
5.5 One Inputat 3.4V,
other inputat VCCor
GND
1.35 1.5 mA
IOPD Output Leakage
Current
0VOUT= 5.5V 0.5 5.0 μA
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Conditions Value Unit =25oC -40to85oC
Min. Typ. Max. Min. Max.
CIN Input Capacitance 4 10 10 pF
CPD Power Dissipation
Capacitance (note1) pF
1)CPDisdefinedasthevalueoftheIC’sinternalequivalentcapacitance whichiscalculatedfromtheoperatingcurrentconsumption withoutload.(Referto
TestCircuit).Average operatingcurrent canbeobtained bythefollowingequation. ICC(opr)= CPD• VCC• fIN+ICC/6(per Gate) ELECTRICAL CHARACTERISTICS (Inputtr =tf=3 ns)
Symbol Parameter Test Condition Value Unit
VCC(*)
(V)
(pF) =25oC -40to85oC
Min. Typ. Max. Min. Max.
tPLH
tPHL
Propagation Delay
Time
5.0 15 4.7 6.7 1.0 7.5 ns5.0 50 5.5 7.7 1.0 8.5
(*)Voltagerange is5V± 0.5V
74VHCT04A
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DYNAMIC SWITCHING CHARACTERISTICS
Symbol Parameter Test Conditions Value Unit
VCC
(V) =25oC -40to85oC
Min. Typ. Max. Min. Max.
VOLP Dynamic Low Voltage
Quiet Output (note1,2)
5.0 =50pF
0.3 0.8
VOLV -0.8 -0.3
VIHD Dynamic High Voltage
Input (note1,3)
5.0 2
VILD Dynamic Low Voltage
Input (note1,3)
5.0 0.8
1)Worst case package.
2)Maxnumber ofoutputs defined as(n).Datainputs aredriven0Vto3.0V,(n -1)outputs switching andoneoutput atGND.
3)Maxnumber ofdatainputs(n)switching.(n-1)switching0Vto3.0V.Inputsunder testswitching: 3.0Vtothreshold(VILD),0Vtothreshold(VIHD),f=1MHz.
TEST CIRCUIT =15/50 pForequivalent (includes jigand probecapacitance)
RT=ZOUTofpulsegenerator (typically50Ω)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
74VHCT04A
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 1.75 0.068 0.1 0.2 0.003 0.007 1.65 0.064 0.35 0.46 0.013 0.018 0.19 0.25 0.007 0.010 0.5 0.019 45 (typ.) 8.55 8.75 0.336 0.344 5.8 6.2 0.228 0.244 1.27 0.050 7.62 0.300 3.8 4.0 0.149 0.157 4.6 5.3 0.181 0.208 0.5 1.27 0.019 0.050 0.68 0.026 8 (max.)
P013G
SO-14 MECHANICAL DATA
74VHCT04A
5/7
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 1.1 0.433 0.05 0.10 0.15 0.002 0.004 0.006 0.85 0.9 0.95 0.335 0.354 0.374 0.19 0.30 0.0075 0.0118 0.09 0.20 0.0035 0.0079 4.9 5 5.1 0.193 0.197 0.201 6.25 6.4 6.5 0.246 0.252 0.256 4.3 4.4 4.48 0.169 0.173 0.176 0.65 BSC 0.0256 BSCo 4o 8o 0o 4o 8o 0.50 0.60 0.70 0.020 0.024 0.028 EbA
PIN1 IDENTIFICATION LKe
TSSOP14 MECHANICAL DATA
74VHCT04A
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Partno	Mfg	Dc	Qty	Available	Descript
74VHCT04AT	ST	N/a	14	avai	HEX INVERTER