74V2G03STR ,DUAL 2-INPUT OPEN DRAIN NAND GATE74V2G03DUAL 2-INPUT OPEN DRAIN NAND GATEPRELIMINARY DATA ■ HIGH SPEED: t = 3.9ns (TYP.) at V = 5VP ..
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74V2G03STR
DUAL 2-INPUT OPEN DRAIN NAND GATE
1/9November 2001 HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V LOW POWER DISSIPATION:
ICC = 1μA(MAX.) at TA=25°C HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS OPERATING VOLTAGE RANGE:CC (OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY
DESCRIPTIONThe 74V2G03 is an advanced high-speed CMOS
DUAL 2-INPUT OPEN DRAIN NAND GATE
fabricated with sub-micron silicon gate and
double-layer metal wiring C2 MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
The device can, with an external pull-up resistor,
be used in wired AND configuration. This device
can also be used as a led driver in any other
application requiring current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
74V2G03DUAL 2-INPUT OPEN DRAIN NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PRELIMINARY DATA
74V2G032/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE Z: High Impedance
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS 1) VIN from 30% to 70% of VCC
74V2G033/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
74V2G034/9
CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
TEST CIRCUIT CL = 15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
74V2G035/9
74V2G036/9
