74V1T86STR ,SINGLE EXCLUSIVE OR GATE74V1T86SINGLE EXCLUSIVE OR GATE ■ HIGH SPEED: t = 4.8ns (TYP.) at V = 5VPD CC■ LOW POWER DISSIPATI ..
74V2G00STR ,DUAL 2-INPUT NAND GATEABSOLUTE MAXIMUM RATINGS Symbol Parameter² Value UnitV Supply Voltage-0.5 to +7.0 VCCV DC Inpu ..
74V2G02STR ,DUAL 2-INPUT NOR GATEAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
74V2G03STR ,DUAL 2-INPUT OPEN DRAIN NAND GATE74V2G03DUAL 2-INPUT OPEN DRAIN NAND GATEPRELIMINARY DATA ■ HIGH SPEED: t = 3.9ns (TYP.) at V = 5VP ..
74V2G04STR ,TRIPLE INVERTERAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
74V2G05STR ,TRIPLE INVERTER (OPEN DRAIN)74V2G05TRIPLE INVERTER (OPEN DRAIN)PRELIMINARY DATA ■ HIGH SPEED: t = 3.7ns (TYP.) at V = 5VPD CC■ ..
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87C451 ,80C51 8-bit microcontroller family 4K/128 OTP/ROM/ROMless, expanded I/O
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74V1T86STR
SINGLE EXCLUSIVE OR GATE
1/9July 2001 HIGH SPEED: tPD = 4.8ns (TYP.) at VCC = 5V LOW POWER DISSIPATION:CC = 1μA(MAX.) at TA =25°C COMPATIBLE WITH TTL OUTPUTS:
VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE:OH| = IOL = 8mA (MIN) at VCC = 4.5V BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL OPERATING VOLTAGE RANGE:
VCC(OPR) = 4.5V to 5.5V IMPROVED LATCH-UP IMMUNITY
DESCRIPTIONThe 74V1T86 is an advanced high-speed CMOS
SINGLE EXCLUSIVE OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C2 MOS technology.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
74V1T86SINGLE EXCLUSIVE OR GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
74V1T862/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS 1) VIN from 0.8V to 2V
74V1T863/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns) (*) Voltage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
74V1T864/9
TEST CIRCUIT CL = 15/50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
