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74V1G86CTRSTN/a7000avaiSINGLE EXCLUSIVE OR GATE
74V1G86CTRSTMN/a1179avaiSINGLE EXCLUSIVE OR GATE
74V1G86STRSTN/a9000avaiSINGLE EXCLUSIVE OR GATE


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74V1G86CTR-74V1G86STR
SINGLE EXCLUSIVE OR GATE
1/9July 2001 HIGH SPEED: tPD = 4.8ns (TYP.) at VCC = 5V LOW POWER DISSIPATION:CC = 1μA(MAX.) at TA =25°C HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE:OH| = IOL = 8mA (MIN) at VCC = 4.5V BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL OPERATING VOLTAGE RANGE:
VCC(OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY
DESCRIPTION

The 74V1G86 is an advanced high-speed CMOS
SINGLE EXCLUSIVE OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C2 MOS technology.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
74V1G86

SINGLE EXCLUSIVE OR GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
74V1G86
2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS

1) VIN from 30% to 70% of VCC
74V1G86
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r = tf = 3ns)
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
74V1G86
4/9
TEST CIRCUIT

CL = 15/50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)


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