74LVC2GU04GW ,Dual inverterFeatures and benefits Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant input/output fo ..
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74LVC2GU04GW
Dual inverter
1. General descriptionThe 74LVC2GU04 provides two inverters. Each inverter is a single stage with unbuffered
output.
The inputs can be driven from either 3.3Vor5 V devices. This feature allows the use of
this device in a mixed 3.3V and5 V environment.
2. Features and benefits Wide supply voltage range from 1.65Vto 5.5V 5 V tolerant input/output for interfacing with 5 V logic High noise immunity ESD protection: HBM JESD22-A114F exceeds 2000V MM JESD22-A115-A exceeds 200 V 24 mA output drive (VCC =3.0V) CMOS low power consumption Latch-up performance exceeds 250 mA Input accepts voltages up to 5V Multiple package options Specified from 40 Cto+85 C and 40 Cto +125 C
3. Ordering information
74L VC2GU04
Dual inverter
Rev. 8 — 3 July 2012 Product data sheet
Table 1. Ordering information74LVC2GU04GW 40 Cto+125C SC-88 plastic surface-mounted package; 6 leads SOT363
74LVC2GU04GV 40 Cto+125C TSOP6 plastic surface-mounted package (TSOP6); leads
SOT457
74LVC2GU04GM 40 Cto+125C XSON6 plastic extremely thin small outline package; leads; 6 terminals; body 1 1.45 0.5 mm
SOT886
74LVC2GU04GF 40 C to +125 C XSON6 plastic extremely thin small outline package; leads; 6 terminals; body 11 0.5 mm
SOT891
74LVC2GU04GN 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 0.9 1.0 0.35 mm
SOT1115
74LVC2GU04GS 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 1.0 1.0 0.35 mm
SOT1202
NXP Semiconductors 74LVC2GU04
Dual inverter
4. Marking[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
6. Pinning information
6.1 Pinning
Table 2. Marking codes74LVC2GU04GW YD
74LVC2GU04GV VU4
74LVC2GU04GM YD
74LVC2GU04GF YD
74LVC2GU04GN YD
74LVC2GU04GS YD
NXP Semiconductors 74LVC2GU04
Dual inverter
6.2 Pin description
7. Functional description[1] H = HIGH voltage level; L = LOW voltage level.
8. Limiting values[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC=0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3] For SC-88 and SC-74 packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
Table 3. Pin description 1 data input
GND 2 ground (0V) 3 data input 4 data output
VCC 5 supply voltage 6 data output
Table 4. Function table[1]
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +6.5 V
IIK input clamping current VI < 0 V 50 - mA input voltage [1] 0.5 +6.5 V
IOK output clamping current VO < 0 V 50 - mA output voltage Active mode [1][2] 0.5 VCC + 0.5 V output current VO = 0 V to VCC - 50 mA
ICC supply current - 100 mA
IGND ground current 100 - mA
Tstg storage temperature 65 +150 C
Ptot total power dissipation Tamb = 40 C to +125C [3]- 250 mW
NXP Semiconductors 74LVC2GU04
Dual inverter
9. Recommended operating conditions
10. Static characteristics
Table 6. Recommended operating conditionsVoltages are referenced to GND (ground = 0 V).
VCC supply voltage 1.65 - 5.5 V input voltage 0 - 5.5 V output voltage Active mode 0 - VCC V
Tamb ambient temperature 40 - +125 C
t/V input transition rise and fall rate VCC = 1.65 V to 2.7 V - - 20 ns/V
VCC = 2.7 V to 5.5 V - - 10 ns/V
Table 7. Static characteristicsAt recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Tamb = 40 C to +85 C[1]VIH HIGH-level input voltage VCC = 1.65 V to 5.5 V 0.75 VCC -- V
VIL LOW-level input voltage VCC = 1.65 V to 5.5 V - - 0.25 VCC V
VOH HIGH-level output voltage VI = VIH or VIL = 100 A;
VCC= 1.65Vto 5.5 V
VCC 0.1 - - V = 4 mA; VCC= 1.65 V 1.2 - - V = 8 mA; VCC= 2.3 V 1.9 - - V = 12 mA; VCC= 2.7 V 2.2 - - V = 24 mA; VCC= 3.0 V 2.3 - - V = 32 mA; VCC= 4.5 V 3.8 - - V
VOL LOW-level output voltage VI = VIH or VIL = 100 A;
VCC= 1.65Vto 5.5 V 0.1 V = 4 mA; VCC =1.65 V - - 0.45 V = 8 mA; VCC= 2.3 V - - 0.3 V = 12 mA; VCC= 2.7 V - - 0.4 V = 24 mA; VCC= 3.0 V - - 0.55 V = 32 mA; VCC= 4.5 V - - 0.55 V input leakage current VI = 5.5 V or GND;
VCC =0 Vto 5.5V
[2]- 0.1 5 A
ICC supply current VI = 5.5 V or GND; IO = 0 A;
VCC= 1.65Vto 5.5 V
-0.1 10 A input capacitance VCC =3.3 V; VI = GND to VCC -5 -pF
NXP Semiconductors 74LVC2GU04
Dual inverter[1] All typical values are measured at Tamb = 25 C.
[2] These typical values are measured at VCC =3.3V.
Tamb = 40 C to +125 CVIH HIGH-level input voltage VCC = 1.65 V to 5.5 V 0.8 VCC -- V
VIL LOW-level input voltage VCC = 1.65 V to 5.5 V - - 0.2 VCC V
VOH HIGH-level output voltage VI = VIH or VIL = 100 A;
VCC= 1.65Vto 5.5 V
VCC 0.1 - - V = 4 mA; VCC= 1.65 V 0.95 - - V = 8 mA; VCC= 2.3 V 1.7 - - V = 12 mA; VCC= 2.7 V 1.9 - - V = 24 mA; VCC= 3.0 V 2.0 - - V = 32 mA; VCC= 4.5 V 3.4 - - V
VOL LOW-level output voltage VI = VIH or VIL = 100 A;
VCC= 1.65Vto 5.5 V 0.1 V = 4 mA; VCC =1.65 V - - 0.7 V = 8 mA; VCC= 2.3 V - - 0.45 V = 12 mA; VCC= 2.7 V - - 0.6 V = 24 mA; VCC= 3.0 V - - 0.8 V = 32 mA; VCC= 4.5 V - - 0.8 V input leakage current VI = 5.5 V or GND;
VCC =0 Vto 5.5V 20 A
ICC supply current VI = 5.5 V or GND; IO = 0 A;
VCC= 1.65Vto 5.5 V 40 A
Table 7. Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground = 0 V).
NXP Semiconductors 74LVC2GU04
Dual inverter
11. Dynamic characteristics[1] Typical values are measured at Tamb =25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PDin W). =CPD VCC2fi N+ (CL VCC2fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance inpF;
VCC= supply voltage in V;= number of inputs switching;
(CL VCC2fo)= sum of outputs.
12. Waveforms
Table 8. Dynamic characteristicsVoltages are referenced to GND (ground=0 V). For test circuit see Figure8.
tpd propagation delay nA to nY; see Figure7 [2]
VCC = 1.65 V to 1.95 V 0.5 2.3 5.0 0.5 6.3 ns
VCC = 2.3 V to 2.7 V 0.3 1.8 4.0 0.3 5.0 ns
VCC = 2.7 V 0.3 2.6 4.5 0.3 5.6 ns
VCC = 3.0 V to 3.6 V 0.3 2.3 3.7 0.3 4.5 ns
VCC = 4.5 V to 5.5 V 0.3 1.7 3.0 0.3 3.8 ns
CPD power dissipation
capacitance
VI = GND to VCC; VCC= 3.3 V [3] -7.8 - pF
NXP Semiconductors 74LVC2GU04
Dual inverter
Table 9. Measurement points1.65 V to 1.95V 0.5 VCC 0.5 VCC
2.3 V to 2.7V 0.5 VCC 0.5 VCC
2.7V 1.5V 1.5V
3.0V to 3.6V 1.5V 1.5V
4.5 V to 5.5V 0.5 VCC 0.5 VCC
Table 10. Test data1.65 V to 1.95V VCC 2.0ns 30pF 1k open
2.3 V to 2.7V VCC 2.0ns 30pF 500 open
2.7V 2.7V 2.5ns 50pF 500 open
3.0V to 3.6V 2.7V 2.5ns 50pF 500 open
4.5 V to 5.5V VCC 2.5ns 50pF 500 open
NXP Semiconductors 74LVC2GU04
Dual inverter
NXP Semiconductors 74LVC2GU04
Dual inverter
13. Application informationSome applications are:
Linear amplifier (see Figure 11)
In crystal oscillator design (see Figure 12)
Remark: All values given are typical unless otherwise specified.NXP Semiconductors 74LVC2GU04
Dual inverter
14. Package outline