74LVC1G58GW Fast Delivery |IC PHOENIX CO.,LIMITED

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74LVC1G58GW
Low-power configurable multiple function gate
General descriptionThe 74LVC1G58 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or5 V devices. This feature allows the use of this
device in a mixed 3.3 V and5 V environment.
This deviceis fully speciﬁedfor partial power-down applications using Ioff. TheIoff circuitry
disables the output, preventing the damaging backﬂow current through the device whenit
is powered down.
The 74LVC1G58 provides conﬁgurable multiple functions. The output state is determined eight patternsof 3-bit input. The user can choose the logic functions AND, OR, NAND,
NOR, XOR, inverter and buffer. All inputs can be connected to VCC or GND.
The three inputs (A, B and C) are capable of transforming slowly changing input signals
into sharply deﬁned, jitter-free output signals.
The gate switches at different points for positive and negative-going signals. The
difference between the positive voltage VT+ and the negative voltage VT−is deﬁnedas the
hysteresis voltage VH. Features Wide supply voltage range from 1.65 V to 5.5V5 V tolerant input/output for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95V) JESD8-5 (2.3 V to 2.7V) JESD8B/JESD36 (2.7 V to 3.6 V). ±24 mA output drive (VCC= 3.0V) ESD protection: HBM EIA/JESD22-A114-B exceeds 2000V MM EIA/JESD22-A115-A exceeds 200V. CMOS low power consumption Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5V Multiple package options Speciﬁed from −40 °C to +85 °C and −40 °C to +125 °C.
74L VC1G58
Low-power conﬁgurable multiple function gate
Philips Semiconductors 74L VC1G58 Quick reference data
[1] CPD is used to determine the dynamic power dissipation (PDin μW). =CPD× VCC2×fi× N+ Σ(CL× VCC2×fo) where: = input frequency in MHz;= output frequency in MHz;= output load capacitance inpF;
VCC= supply voltage in Volts;= total load switching outputs;
Σ(CL× VCC2×fo)= sum of the outputs.
[2] The condition is VI= GNDto VCC. Ordering information Marking
Table 1: Quick reference data
GND=0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns.
tPHL, tPLH propagation delay
input A, B andto outputY
VCC= 1.8V;CL =30pF; =1kΩ -ns
VCC= 2.5V;CL =30pF;= 500Ω 3.5 - ns
VCC= 2.7V;CL =50pF;= 500Ω 4.2 - ns
VCC= 3.3V;CL =50pF;= 500Ω 3.8 - ns
VCC= 5.0V;CL =50pF;= 500Ω 3.0 - ns input capacitance - 2.5 - pF
CPD power dissipation
capacitance per buffer
VCC= 3.3V [1][2] -20 - pF
Table 2: Ordering information
74LVC1G58GW −40 °C to +125°C SC-88 plastic surface mounted package; 6 leads SOT363
74LVC1G58GV −40 °C to +125°C SC-74 plastic surface mounted package; 6 leads SOT457
74LVC1G58GM −40 °C to +125°C XSON6 plastic extremely thin small outline package; no
leads; 6 terminals; body 1 × 1.45 × 0.5 mm
SOT886
Table 3: Marking
74LVC1G58GW YK
74LVC1G58GV V58
74LVC1G58GM YK
Philips Semiconductors 74L VC1G58 Functional diagram Pinning information
7.1 Pinning
7.2 Pin description
Table 4: Pin description 1 data inputB
GND 2 ground (0V) 3 data inputA 4 data outputY
VCC 5 supply voltage 6 data inputC
Philips Semiconductors 74L VC1G58 Functional description
8.1 Function table
[1]H= HIGH voltage level;= LOW voltage level.
8.2 Logic conﬁgurations
Table 5: Function table[1]
LLLL
LLH H LL HHH LLH HH
HHL L
HHHL
Table 6: Function selection table
2-input NAND see Figure4
2-input NAND with both inputs inverted see Figure7
2-input AND with inverted input see Figure 5 and6
2-input NOR with inverted input see Figure 5 and6
2-input OR see Figure7
2-input OR with both inputs inverted see Figure4
2-input XOR see Figure8
Buffer see Figure9
Inverter see Figure10
Philips Semiconductors 74L VC1G58 Limiting values
Table 7: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground=0V).
VCC supply voltage −0.5 +6.5 V
IIK input diode current VI <0 V - −50 mA input voltage [1] −0.5 +6.5 V
IOK output diode current VO >VCC or VO <0V - ±50 mA output voltage active mode [1][2] −0.5 +6.5 V
Power-down mode [1][2] −0.5 +6.5 V output source or sink
current =0Vto VCC - ±50 mA
Philips Semiconductors 74L VC1G58
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC=0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
10. Recommended operating conditions
11. Static characteristics
ICC, IGND VCC or GND current - ±100 mA
Tstg storage temperature −65 +150 °C
Ptot power dissipation Tamb= −40 °C to +125°C - 300 mW
Table 7: Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground=0V).
Table 8: Recommended operating conditions
VCC supply voltage 1.65 - 5.5 V input voltage 0 - 5.5 V output voltage active mode 0 - VCC V
VCC=0 V; Power-down
mode - 5.5 V
Tamb operating ambient
temperature
−40 - +125 °C
Table 9: Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Tamb= −40°Cto +85°C[1]
VOL LOW-level output voltage VI =VCCor GND= 100 μA; VCC = 1.65 Vto 5.5 V - - 0.1 V=4 mA; VCC = 1.65 V - - 0.45 V=8 mA; VCC = 2.3 V - - 0.3 V=12 mA; VCC = 2.7 V - - 0.4 V=24 mA; VCC = 3.0 V - - 0.55 V=32 mA; VCC = 4.5 V - - 0.55 V
VOH HIGH-level output voltage VI =VCCor GND= −100 μA; VCC = 1.65 Vto 5.5 V VCC− 0.1- - V=−4 mA; VCC = 1.65 V 1.2 - - V=−8 mA; VCC = 2.3 V 1.9 - - V= −12 mA; VCC = 2.7 V 2.2 - - V= −24 mA; VCC = 3.0 V 2.3 - - V= −32 mA; VCC = 4.5 V 3.8 - - V
ILI input leakage current VI= 5.5Vor GND; VCC = 3.6 V - ±0.1 ±5 μA
Philips Semiconductors 74L VC1G58
[1] Typical values are measured at maximum VCC and Tamb =25°C.
Ioff power OFF leakage
currentorVO= 5.5 V; VCC = 0 V - ±0.1 ±10 μA
ICC quiescent supply current VI =VCCor GND; IO =0A;
VCC= 5.5V 0.1 10 μA
ΔICC additional quiescent
supply current per pin =VCC− 0.6 V; IO =0A;
VCC= 2.3V to 5.5 V 5 500 μA input capacitance - 2.5 - pF
Tamb= −40°Cto +125°C
VOL LOW-level output voltage VI =VCCor GND= 100 μA; VCC = 1.65 Vto 5.5 V - - 0.1 V=4 mA; VCC = 1.65 V - - 0.7 V=8 mA; VCC = 2.3 V - - 0.45 V=12 mA; VCC = 2.7 V - - 0.6 V=24 mA; VCC = 3.0 V - - 0.8 V=32 mA; VCC = 4.5 V - - 0.8 V
VOH HIGH-level output voltage VI =VCCor GND= −100 μA; VCC = 1.65 Vto 5.5 V VCC− 0.1- - V=−4 mA; VCC = 1.65 V 0.95 - - V=−8 mA; VCC = 2.3 V 1.7 - - V= −12 mA; VCC = 2.7 V 1.9 - - V= −24 mA; VCC = 3.0 V 2.0 - - V= −32 mA; VCC = 4.5 V 3.4 - - V
ILI input leakage current VI= 5.5Vor GND; VCC = 3.6 V - - ±100 μA
Ioff power OFF leakage
currentorVO= 5.5 V; VCC = 0 V - - ±200 μA
ICC quiescent supply current VI =VCCor GND; IO =0A;
VCC= 5.5V - 200 μA
ΔICC additional quiescent
supply current per pin =VCC− 0.6 V; IO =0A;
VCC= 2.3V to 5.5 V - 5000 μA
Table 9: Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Philips Semiconductors 74L VC1G58
12. Dynamic characteristics
[1] Typical values are measured at nominal VCC and Tamb =25°C.
[2] CPD is used to determine the dynamic power dissipation (PD in μW). =CPD× VCC2×fi× N+ Σ(CL× VCC2× fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in Volts;= total load switching outputs;
Σ(CL× VCC2×fo)= sum of the outputs.
[3] The condition is VI= GNDto VCC.
Table 10: Dynamic characteristics
GND = 0 V.
Tamb= −40°Cto +85°C[1]
tPHL, tPLH propagation delay A, B, CtoY see Figure11 and12
VCC = 1.65 Vto 1.95 V 1.0 6.0 14.4 ns
VCC = 2.3 V to 2.7 V 0.5 3.5 8.3 ns
VCC = 2.7 V 0.5 4.2 8.5 ns
VCC = 3.0 Vto 3.6 V 0.5 3.8 6.3 ns
VCC = 4.5 Vto 5.5 V 0.5 3.0 5.1 ns
CPD power dissipation capacitance per
buffer
VCC= 3.3V [2][3] -20 - pF
Tamb= −40°Cto +125°C
tPHL, tPLH propagation delay A, B, CtoY see Figure11 and12
VCC = 1.65 Vto 1.95 V 1.0 - 18 ns
VCC = 2.3 Vto 2.7 V 0.5 - 10.4 ns
VCC = 2.7 V 0.5 - 10.6 ns
VCC = 3.0 Vto 3.6 V 0.5 - 7.9 ns
VCC = 4.5 V to 5.5 V 0.5 - 6.4 ns
Philips Semiconductors 74L VC1G58
13. Waveforms
Table 11: Measurement points
1.65 Vto 1.95V 0.5× VCC VCC 0.5× VCC
2.3 Vto 2.7V 0.5× VCC VCC 0.5× VCC
2.7V 1.5V 2.7V 1.5V
3.0 V to 3.6V 1.5V 2.7V 1.5V
4.5 Vto 5.5V 0.5× VCC VCC 0.5× VCC

Partno	Mfg	Dc	Qty	Available	Descript
74LVC1G58GW	PHI	N/a	219000	avai	Low-power configurable multiple function gate