74LVC1G34GM-74LVC1G34GW Fast Delivery |IC PHOENIX CO.,LIMITED

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74LVC1G34GM-74LVC1G34GW
Single buffer
1. General description
The 74LVC1G34 provides a low-power, low-voltage single buffer.
The input can be driven from either 3.3 Vor5 V devices. This feature allows the use of
this device in a mixed 3.3 V and5 V environment.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
Schmitt trigger action at all inputs makes the circuit highly tolerant of slower input rise and
fall times.
2. Features and benefits Wide supply voltage range from 1.65 Vto 5.5V5 V tolerant inputs for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: JESD8-7 (1.65 Vto 1.95V) JESD8-5 (2.3 Vto 2.7V) JESD8-B/JESD36 (2.7 Vto 3.6 V). ESD protection: HBM JESD22-A114F exceeds 2000V MM JESD22-A115-A exceeds 200V 24 mA output drive (VCC =3.0V) CMOS low power consumption Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5 V Multiple package options Specified from 40 Cto+85 C and 40 Cto+125C
74L VC1G34
Single buffer
Rev. 5 — 2 July 2012 Product data sheet
NXP Semiconductors 74LVC1G34
Single buffer
3. Ordering information
4. Marking
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
Table 1. Ordering information
74LVC1G34GW 40 Cto +125C TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
74LVC1G34GV 40 Cto +125C SC-74A plastic surface-mounted package; 5 leads SOT753
74LVC1G34GM 40 Cto +125C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body1 1.45 0.5 mm
SOT886
74LVC1G34GF 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 11 0.5 mm
SOT891
74LVC1G34GN 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 0.9 1.0 0.35 mm
SOT1115
74LVC1G34GS 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 1.01.0 0.35 mm
SOT1202
74LVC1G34GX 40 C to +125C X2SON5 X2SON5: plastic thermal enhanced extremely thin
small outline package; no leads; 5 terminals;
body 0.8 0.8 0.35 mm
SOT1226
Table 2. Marking
74LVC1G34GW YN
74LVC1G34GV YN
74LVC1G34GM YN
74LVC1G34GF YN
74LVC1G34GN YN
74LVC1G34GS YN
74LVC1G34GX YN
NXP Semiconductors 74LVC1G34
Single buffer
6. Pinning information
6.1 Pinning
6.2 Pin description
Table 3. Pin description
n.c. 1 1 not connected 2 2 data input
GND 3 3 ground (0V) 4 4 data output
n.c. - 5 not connected
VCC 5 6 supply voltage
NXP Semiconductors 74LVC1G34
Single buffer
7. Functional description
[1] H= HIGH voltage level;= LOW voltage level.
8. Limiting values
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC=0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3] For TSSOP5 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 and X2SON5 package: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 4. Function table[1]
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +6.5 V
IIK input clamping current VI < 0 V 50 - mA input voltage [1] 0.5 +6.5 V
IOK output clamping current VO > VCC or VO < 0 V - 50 mA output voltage Active mode [1][2] 0.5 VCC + 0.5 V
Power-down mode [1][2] 0.5 +6.5 V output current VO = 0 V to VCC - 50 mA
ICC supply current - 100 mA
IGND ground current 100 - mA
Ptot total power dissipation Tamb = 40 C to +125C [3]- 250 mW
Tstg storage temperature 65 +150 C
Table 6. Recommended operating conditions
VCC supply voltage 1.65 - 5.5 V input voltage 0 - 5.5 V output voltage Active mode 0 - VCC VO
VCC = 0 V; Power-down mode 0 - 5.5 VO
Tamb ambient temperature 40 - +125 C
t/V input transition rise and fall rate VCC = 1.65 V to 2.7 V - - 20 ns/V
VCC = 2.7 V to 5.5 V - - 10 ns/V
NXP Semiconductors 74LVC1G34
Single buffer
10. Static characteristicsTable 7. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground=0V).
Tamb= 40 C to +85C[1]
VIH HIGH-level input voltage VCC = 1.65 V to 1.95 V 0.65  VCC -- V
VCC = 2.3 V to 2.7 V 1.7 - - V
VCC = 2.7 V to 3.6 V 2.0 - - V
VCC = 4.5 V to 5.5 V 0.7  VCC -- V
VIL LOW-level input voltage VCC = 1.65 V to 1.95 V - - 0.35  VCC V
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 2.7 V to 3.6 V - - 0.8 V
VCC = 4.5 V to 5.5 V - - 0.3  VCC V
VOH HIGH-level output voltage VI =VIHorVIL= 100 A; VCC = 1.65 V to 5.5V VCC 0.1 - - V= 4mA; VCC = 1.65V 1.2 1.54 - V= 8mA; VCC = 2.3V 1.9 2.15 - V= 12 mA; VCC = 2.7 V 2.2 2.50 - V= 24 mA; VCC = 3.0 V 2.3 2.62 - V= 32 mA; VCC = 4.5 V 3.8 4.11 - V
VOL LOW-level output voltage VI =VIHorVIL =100 A; VCC = 1.65 V to 5.5 V - - 0.10 V =4mA; VCC = 1.65V - 0.07 0.45 V =8mA; VCC = 2.3V - 0.12 0.30 V =12mA; VCC = 2.7 V - 0.17 0.40 V =24mA; VCC = 3.0 V - 0.33 0.55 V =32mA; VCC = 4.5 V - 0.39 0.55 V input leakage current VCC = 0 V to 5.5 V; VI =5.5V orGND [2]- 0.1 5 A
IOFF power-off leakage current VCC = 0 V; VIorVO =5.5V - 0.1 10 A
ICC supply current VCC = 1.65 V to 5.5 V; IO =0A; = 5.5 Vor GND
-0.1 10 A
ICC additional supply current VCC = 2.3 V to 5.5 V; VI =VCC 0.6V; =0 A
[2] -5 500 A input capacitance VCC= 3.3 V; VI = GND to VCC -4 - pF
Tamb= 40 C to +125C
VIH HIGH-level input voltage VCC = 1.65 V to 1.95 V 0.65  VCC -- V
VCC = 2.3 V to 2.7 V 1.7 - - V
VCC = 2.7 V to 3.6 V 2.0 - - V
VCC = 4.5 V to 5.5 V 0.7  VCC -- V
VIL LOW-level input voltage VCC = 1.65 V to 1.95 V - - 0.35  VCC V
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 2.7 V to 3.6 V - - 0.8 V
VCC = 4.5 V to 5.5 V - - 0.3  VCC V
NXP Semiconductors 74LVC1G34
Single buffer
[1] All typical values are measured at Tamb = 25 C.
[2] These typical values are measured at VCC =3.3V.
VOH HIGH-level output voltage VI =VIHorVIL= 100 A; VCC = 1.65 V to 5.5V VCC 0.1 - - V= 4mA; VCC = 1.65V 0.95 - - V= 8mA; VCC = 2.3V 1.7 - - V= 12 mA; VCC = 2.7 V 1.9 - - V= 24 mA; VCC = 3.0 V 2.0 - - V= 32 mA; VCC = 4.5 V 3.4 - - V
VOL LOW-level output voltage VI =VIHorVIL =100 A; VCC = 1.65 V to 5.5 V - - 0.10 V =4mA; VCC = 1.65V - - 0.70 V =8mA; VCC = 2.3V - - 0.45 V =12mA; VCC = 2.7 V - - 0.60 V =24mA; VCC = 3.0 V - - 0.80 V =32mA; VCC = 4.5 V - - 0.80 V input leakage current VCC = 0 V to 5.5 V; VI =5.5V orGND - - 100 A
IOFF power-off leakage current VCC = 0 V; VIorVO =5.5V - - 200 A
ICC supply current VCC = 1.65 V to 5.5 V; IO =0A; = 5.5 Vor GND 200 A
ICC additional supply current VCC = 2.3 V to 5.5 V; VI =VCC 0.6V; =0 A - 5000 A
Table 7. Static characteristics …continued
At recommended operating conditions. Voltages are referenced to GND (ground=0V).
NXP Semiconductors 74LVC1G34
Single buffer
11. Dynamic characteristics
[1] Typical values are measured at Tamb =25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V, and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PDin W). =CPD VCC2fi N+ (CL VCC2fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance inpF;
VCC= supply voltage in V;= number of inputs switching;
(CL VCC2fo)= sum of outputs.
12. Waveforms
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground=0 V). For test circuit see Figure9.
tpd propagation delay A to Y; see Figure8 [2]
VCC= 1.65 V to 1.95V 1.0 4.0 8.6 1.0 11.0 ns
VCC= 2.3 V to 2.7V 0.5 2.6 4.4 0.5 5.6 ns
VCC= 2.7V 0.5 2.3 4.5 0.5 5.6 ns
VCC= 3.0 V to 3.6V 0.5 2.0 4.1 0.5 5.2 ns
VCC= 4.5 V to 5.5V 0.5 1.6 3.2 0.5 4.1 ns
CPD power dissipation
capacitance
VI = GND to VCC; VCC= 3.3 V [3] -15- - - pF
NXP Semiconductors 74LVC1G34
Single buffer
Table 9. Measurement points
1.65 V to 1.95V 0.5 VCC 0.5 VCC
2.3 V to 2.7V 0.5 VCC 0.5 VCC
2.7V 1.5V 1.5V
3.0V to 3.6V 1.5V 1.5V
4.5 V to 5.5V 0.5 VCC 0.5 VCC
Table 10. Test data
1.65 V to 1.95V VCC  2.0ns 30pF 1k open
2.3 V to 2.7V VCC  2.0ns 30pF 500 open
2.7V 2.7V  2.5ns 50pF 500 open
3.0V to 3.6V 2.7V  2.5ns 50pF 500 open
4.5 V to 5.5V VCC  2.5ns 50pF 500 open
NXP Semiconductors 74LVC1G34
Single buffer
13. Package outline
NXP Semiconductors 74LVC1G34
Single buffer

Partno	Mfg	Dc	Qty	Available	Descript
74LVC1G34GM	NXP	N/a	4900	avai	Single buffer
74LVC1G34GW	NXP	N/a	42500	avai	Single buffer