74LVC1G04GW ,Single inverterPin configuration SOT886 74LVC1G0474LVC1G04n.c. 1 5 VCCn.c. 1 6 VCC3GNDA 2 5 n.c.A 2 4 YGND 3 4 Y00 ..
74LVC1G06GV ,inverter with open-drain outputFeatures and benefits Wide supply voltage range from 1.65 V to 5.5 V High noise immunity Complie ..
74LVC1G06GV ,inverter with open-drain outputLogic diagram74LVC1G06 All information provided in this document is subject to legal disclaimers. ..
74LVC1G06GW ,inverter with open-drain outputapplications using I . OFFThe I circuitry disables the output, preventing the damaging backflow cur ..
74LVC1G07GM ,Buffer with open-drain output 74LVC1G07Buffer with open-drain outputRev. 11 — 29 June 2012 Product data sheet1.
74LVC1G07GV ,74LVC1G07; Buffer with open-drain outputPin configuration SOT886 74LVC1G0774LVC1G07n.c. 1 5 VCCn.c. 1 6 VCC3GNDA 2 5 n.c.A 2 4 YGND 3 4 Y00 ..
80EPF12 ,1200V Fast Recovery Diode in a TO-247AC packageFeaturesThe 80EPF.. fast soft recovery QUIETIR rectifierseries has been optimized for combined shor ..
80EPS08 ,800V 80A Std. Recovery Diode in a TO-247ACpackageapplications are in input rectification and theseproducts are designed to be used with I ..
80EPS12 ,1200V 80A Std. Recovery Diode in a TO-247ACpackageI2123 rev. B 11/99SAFEIR Series80EPS..INPUT RECTIFIER DIODEV < 1.17V @ 80AF= 1450AIFSMV 800 to ..
80EPS16 , Input Rectifier Diode, 80 A
80SQ035 ,35V 8A Schottky Discrete Diode in a DO-204AR packageapplications are inI Rectangular 8 AF(AV)switching power supplies, converters, free-wheeling diodes ..
80SQ035TR ,35V 8A Schottky Discrete Diode in a DO-204AR packageFeaturesThe 80SQ axial leaded Schottky rectifier series has beenoptimized for low reverse leakage a ..
74LVC1G04GM-74LVC1G04GV-74LVC1G04GW
Single inverter
1. General descriptionThe 74LVC1G04 provides one inverting buffer.
Input can be driven from either 3.3Vor5 V devices. These features allow the use of
these devices in a mixed 3.3V and5 V environment.
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall
time.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
2. Features and benefits Wide supply voltage range from 1.65Vto 5.5V5 V tolerant inputs for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: JESD8-7 (1.65Vto 1.95V) JESD8-5 (2.3Vto 2.7V) JESD8-B/JESD36 (2.7Vto 3.6V) ESD protection: HBM JESD22-A114F exceeds 2000V MM JESD22-A115-A exceeds 200V 24 mA output drive (VCC =3.0V) CMOS low power consumption Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5V Multiple package options Specified from 40 Cto+85 C and 40 Cto +125 C.
74L VC1G04
Single inverter
Rev. 12 — 6 August 2012 Product data sheet
NXP Semiconductors 74LVC1G04
Single inverter
3. Ordering information
4. Marking[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
Table 1. Ordering information74LVC1G04GW 40 Cto +125C TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
74LVC1G04GV 40 Cto +125C SC-74A plastic surface-mounted package; 5 leads SOT753
74LVC1G04GM 40 Cto +125C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body1 1.45 0.5 mm
SOT886
74LVC1G04GF 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 11 0.5 mm
SOT891
74LVC1G04GN 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 0.9 1.0 0.35 mm
SOT1115
74LVC1G04GS 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 1.01.0 0.35 mm
SOT1202
74LVC1G04GX 40 C to +125C X2SON5 X2SON5: plastic thermal enhanced extremely thin
small outline package; no leads; 5 terminals;
body 0.8 0.8 0.35 mm
SOT1226
Table 2. Marking74LVC1G04GW VC
74LVC1G04GV V04
74LVC1G04GM VC
74LVC1G04GF VC
74LVC1G04GN VC
74LVC1G04GS VC
74LVC1G04GX VC
NXP Semiconductors 74LVC1G04
Single inverter
6. Pinning information
6.1 Pinning
6.2 Pin description
Table 3. Pin descriptionn.c. 1 1 not connected 2 2 data input
GND 3 3 ground (0V) 4 4 data output
n.c. - 5 not connected
VCC 5 6 supply voltage
NXP Semiconductors 74LVC1G04
Single inverter
7. Functional description[1] H= HIGH voltage level; L= LOW voltage level
8. Limiting values[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC=0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3] For TSSOP5 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 and X2SON5 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 4. Function table[1]
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +6.5 V
IIK input clamping current VI < 0 V 50 - mA input voltage [1] 0.5 +6.5 V
IOK output clamping current VO > VCC or VO < 0 V - 50 mA output voltage Active mode [1][2] 0.5 VCC + 0.5 V
Power-down mode [1][2] 0.5 +6.5 V output current VO = 0 to VCC - 50 mA
ICC supply current - 100 mA
IGND ground current 100 - mA
Ptot total power dissipation Tamb = 40 C to +125C [3]- 250 mW
Tstg storage temperature 65 +150 C
Table 6. Recommended operating conditionsVCC supply voltage 1.65 - 5.5 V input voltage 0 - 5.5 V output voltage Active mode 0 - VCC VO
VCC = 0 V; Power-down mode 0 - 5.5 VO
Tamb ambient temperature 40 - +125 C
t/V input transition rise and fall rate VCC = 1.65 V to 2.7 V - - 20 ns/V
VCC = 2.7 V to 5.5 V - - 10 ns/V
NXP Semiconductors 74LVC1G04
Single inverter
10. Static characteristicsTable 7. Static characteristicsAt recommended operating conditions. Voltages are referenced to GND (ground=0V).
Tamb= 40 C to
+85C
VIH HIGH-level input voltage VCC = 1.65 V to 1.95 V 0.65 VCC -- V
VCC = 2.3 V to 2.7 V 1.7 - - V
VCC = 2.7 V to 3.6 V 2.0 - - V
VCC = 4.5 V to 5.5 V 0.7 VCC -- V
VIL LOW-level input voltage VCC = 1.65 V to 1.95 V - - 0.35 VCC V
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 2.7 V to 3.6 V - - 0.8 V
VCC = 4.5 V to 5.5 V - - 0.3 VCC V
VOH HIGH-level output voltage VI =VIHorVIL= 100 A; VCC = 1.65 V to 5.5V VCC 0.1 - - V= 4mA; VCC = 1.65V 1.2 - - V= 8mA; VCC = 2.3V 1.9 - - V= 12 mA; VCC = 2.7 V 2.2 - - V= 24 mA; VCC = 3.0 V 2.3 - - V= 32 mA; VCC = 4.5 V 3.8 - - V
VOL LOW-level output voltage VI =VIHorVIL =100 A; VCC = 1.65 V to 5.5 V - - 0.1 V =4mA; VCC = 1.65V - - 0.45 V =8mA; VCC = 2.3V - - 0.3 V =12mA; VCC = 2.7 V - - 0.4 V =24mA; VCC = 3.0 V - - 0.55 V =32mA; VCC = 4.5 V - - 0.55 V input leakage current VCC = 0 V to 5.5 V; VI =5.5V orGND - 0.1 5 A
IOFF power-off leakage current VCC = 0 V; VIorVO =5.5V - 0.1 10 A
ICC supply current VI= 5.5Vor GND;
VCC =1.65Vto5.5V; IO =0A
-0.1 10 A
ICC additional supply current per pin; VCC = 2.3 V to 5.5 V; =VCC 0.6 V; IO =0 A 500 A input capacitance VCC= 3.3 V; VI = GND to VCC -5 - pF
NXP Semiconductors 74LVC1G04
Single inverter[1] All typical values are measured at VCC=3.3 V and Tamb =25C.
Tamb= 40 C to
+125C
VIH HIGH-level input voltage VCC = 1.65 V to 1.95 V 0.65 VCC -- V
VCC = 2.3 V to 2.7 V 1.7 - - V
VCC = 2.7 V to 3.6 V 2.0 - - V
VCC = 4.5 V to 5.5 V 0.7 VCC -- V
VIL LOW-level input voltage VCC = 1.65 V to 1.95 V - - 0.35 VCC V
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 2.7 V to 3.6 V - - 0.8 V
VCC = 4.5 V to 5.5 V - - 0.3 VCC V
VOH HIGH-level output voltage VI =VIHorVIL= 100 A; VCC = 1.65 V to 5.5V VCC 0.1 - - V= 4mA; VCC = 1.65V 0.95 - - V= 8mA; VCC = 2.3V 1.7 - - V= 12 mA; VCC = 2.7 V 1.9 - - V= 24 mA; VCC = 3.0 V 2.0 - - V= 32 mA; VCC = 4.5 V 3.4 - - V
VOL LOW-level output voltage VI =VIHorVIL =100 A; VCC = 1.65 V to 5.5 V - - 0.1 V =4mA; VCC = 1.65V - - 0.70 V =8mA; VCC = 2.3V - - 0.45 V =12mA; VCC = 2.7 V - - 0.60 V =24mA; VCC = 3.0 V - - 0.80 V =32mA; VCC = 4.5 V - - 0.80 V input leakage current VCC = 0 V to 5.5 V; VI =5.5V orGND - - 100 A
IOFF power-off leakage current VCC = 0 V; VIorVO =5.5V - - 200 A
ICC supply current VI= 5.5Vor GND;
VCC =1.65Vto5.5V; IO =0A 200 A
ICC additional supply current per pin; VCC = 2.3 V to 5.5 V; =VCC 0.6 V; IO =0 A - 5000 A
Table 7. Static characteristics …continuedAt recommended operating conditions. Voltages are referenced to GND (ground=0V).
NXP Semiconductors 74LVC1G04
Single inverter
11. Dynamic characteristics[1] Typical values are measured at Tamb =25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PDin W). =CPD VCC2fi N+ (CL VCC2fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance inpF;
VCC= supply voltage in V;= number of inputs switching;
(CL VCC2fo)= sum of outputs.
12. AC waveforms
Table 8. Dynamic characteristicsVoltages are referenced to GND (ground=0 V). For test circuit see Figure9.
tpd propagation delay A to Y; see Figure8 [2]
VCC= 1.65 V to 1.95V 1.0 3.0 7.5 1.0 9.5 ns
VCC= 2.3 V to 2.7V 0.5 2.0 5.0 0.5 6.5 ns
VCC= 2.7V 0.5 2.3 5.2 0.5 7.0 ns
VCC= 3.0 V to 3.6V 0.5 2.0 4.2 0.5 5.5 ns
VCC= 4.5 V to 5.5V 0.5 1.6 3.7 0.5 5.0 ns
CPD power dissipation
capacitance
VI = GND to VCC; VCC= 3.3 V [3] -14- - - pF
NXP Semiconductors 74LVC1G04
Single inverter
Table 9. Measurement points1.65 V to 1.95V 0.5 VCC 0.5 VCC
2.3 V to 2.7V 0.5 VCC 0.5 VCC
2.7V 1.5V 1.5V
3.0V to 3.6V 1.5V 1.5V
4.5 V to 5.5V 0.5 VCC 0.5 VCC
Table 10. Test data1.65 V to 1.95V VCC 2.0ns 30pF 1k open
2.3 V to 2.7V VCC 2.0ns 30pF 500 open
2.7V 2.7V 2.5ns 50pF 500 open
3.0V to 3.6V 2.7V 2.5ns 50pF 500 open
4.5 V to 5.5V VCC 2.5ns 50pF 500 open
NXP Semiconductors 74LVC1G04
Single inverter
13. Package outlineNXP Semiconductors 74LVC1G04
Single inverter