74LVC08AD ,Quad 2-input AND gatePin configuration SO14 and (T)SSOP14 Fig 5.
74LVC08ADB ,Quad 2-input AND gateLOGIC DIAGRAM (ONE GATE)A&132 YB&4SV0041565&98FUNCTION TABLE10INPUTS OUTPUTS&121113nA nB nYSV00436 ..
74LVC08AM ,LOW VOLTAGE CMOS QUAD 2-INPUT AND GATE HIGH PERFORMANCEapplications.■ ESD PERFORMANCE: It can be interfaced to 5V signal environment forHBM > 2000V (MIL S ..
74LVC08AMTR ,LOW VOLTAGE CMOS QUAD 2-INPUT AND GATE HIGH PERFORMANCEAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
74LVC08APW ,Quad 2-input AND gatePIN CONFIGURATION LOGIC SYMBOL1A1A 1 14 1VCC 1Y31B21B 2 13 4B2A42Y1Y 3 12 4A62B52A 4 11 4Y3A93Y83B2 ..
74LVC08ATTR ,LOW VOLTAGE CMOS QUAD 2-INPUT AND GATE HIGH PERFORMANCE74LVC08ALOW VOLTAGE CMOS QUAD 2-INPUT AND GATEHIGH PERFORMANCE ■ 5V TOLERANT INPUTS■ HIGH SPEED: ..
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74LVC08ABQ -74LVC08AD
Quad 2-input AND gate
1. General descriptionThe 74LVC08A provides four 2-input AND gates.
Inputs can be driven from either 3.3 V or5 V devices. This feature allows the use of these
devices as translators in mixed 3.3 V and5 V applications.
2. Features and benefits5 V tolerant inputs for interfacing with 5 V logic Wide supply voltage range from 1.2Vto 3.6V CMOS low power consumption Direct interface with TTL levels Complies with JEDEC standard: JESD8-7A (1.65Vto 1.95V) JESD8-5A (2.3Vto 2.7V) JESD8-C/JESD36 (2.7Vto 3.6V) ESD protection: HBM JESD22-A114F exceeds 2000V MM JESD22-A115-B exceeds 200V CDM JESD22-C101E exceeds 1000V Specified from 40 C to +85C and 40 C to +125C
3. Ordering information
74L VC08A
Quad 2-input AND gate
Rev. 6 — 16 December 2011 Product data sheet
Table 1. Ordering information74LVC08AD 40 Cto +125C SO14 plastic small outline package; 14 leads;
body width 3.9 mm
SOT108-1
74LVC08ADB 40 Cto +125C SSOP14 plastic shrink small outline package; 14 leads;
body width 5.3 mm
SOT337-1
74LVC08APW 40 Cto +125C TSSOP14 plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT402-1
74LVC08ABQ 40 Cto +125C DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.53 0.85 mm
SOT762-1
NXP Semiconductors 74L VC08A
Quad 2-input AND gate
4. Functional diagram
5. Pinning information
5.1 PinningNXP Semiconductors 74L VC08A
Quad 2-input AND gate
5.2 Pin description
6. Functional description[1] H= HIGH voltage level; L= LOW voltage level; X= don’t care
7. Limiting values[1] The minimum input voltage ratings may be exceeded if the input current ratings are observed.
[2] The output voltage ratings may be exceeded if the output current ratings are observed.
[3] For SO14 packages: above 70 C derate linearly with 8 mW/K.
For (T)SSOP14 packages: above 60 C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 C derate linearly with 4.5 mW/K.
Table 2. Pin description1A to 4A 1, 4, 9, 12 data output
1B to 4B 2, 5, 10, 13 data input
1Y to 4Y 3, 6, 8,11 data input
GND 7 ground (0 V)
VCC 14 supply voltage
Table 3. Function selection[1]
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +6.5 V
IIK input clamping current VI < 0 V 50 - mA input voltage [1] 0.5 +6.5 V
IOK output clamping current VO > VCC or VO < 0 V - 50 mA output voltage output HIGH or LOW-state [2] 0.5 VCC + 0.5 V output current VO = 0 V to VCC - 50 mA
ICC supply current - 100 mA
IGND ground current 100 - mA
Ptot total power dissipation Tamb = 40 C to +125C [3] -500 mW
Tstg storage temperature 65 +150 C
NXP Semiconductors 74L VC08A
Quad 2-input AND gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditionsVCC supply voltage 1.65 - 3.6 V
functional 1.2 - - V input voltage 0 - 5.5 V output voltage output HIGH or LOW-state 0 - VCC V
Tamb ambient temperature 40 - +125 C
t/V input transition rise and fall rate VCC = 1.65 V to 2.7 V 0 - 20 ns/V
VCC = 2.7 V to 3.6 V 0 - 10 ns/V
Table 6. Static characteristicsAt recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
VIH HIGH-level
input voltage
VCC = 1.2 V 1.08 - - 1.08 - V
VCC = 1.65 V to 1.95 V 0.65 VCC - - 0.65 VCC -V
VCC = 2.3 V to 2.7 V 1.7 - - 1.7 - V
VCC = 2.7 V to 3.6 V 2.0 - - 2.0 - V
VIL LOW-level
input voltage
VCC = 1.2 V - - 0.12 - 0.12 V
VCC = 1.65 V to 1.95 V - - 0.35 VCC -0.35 VCCV
VCC = 2.3 V to 2.7 V - - 0.7 - 0.7 V
VCC = 2.7 V to 3.6 V - - 0.8 - 0.8 V
VOH HIGH-level
output
voltage =VIHorVIL= 100 A;
VCC =1.65Vto3.6V
VCC 0.2 - - VCC 0.3 - V= 4mA; VCC = 1.65 V 1.2 - - 1.05 - V= 8mA; VCC = 2.3V 1.8 - - 1.65 - V= 12 mA; VCC = 2.7 V 2.2 - - 2.05 - V= 18 mA; VCC = 3.0 V 2.4 - - 2.25 - V= 24 mA; VCC = 3.0 V 2.2 - - 2.0 - V
VOL LOW-level
output
voltage =VIHorVIL= 100 A;
VCC= 1.65Vto 3.6 V - 0.2 - 0.3 V =4mA; VCC = 1.65 V - - 0.45 - 0.65 V =8mA; VCC = 2.3V - - 0.6 - 0.8 V =12mA; VCC = 2.7 V - - 0.4 - 0.6 V =24mA; VCC = 3.0 V - - 0.55 - 0.8 V input leakage
current
VCC = 3.6 V; VI =5.5V orGND - 0.1 5- 20 A
NXP Semiconductors 74L VC08A
Quad 2-input AND gate[1] All typical values are measured at VCC=3.3 V (unless stated otherwise) and Tamb =25C.
10. Dynamic characteristics[1] Typical values are measured at Tamb =25 C and VCC = 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.
[2] tpd is the same as tPLH and tPHL.
[3] Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.
[4] CPD is used to determine the dynamic power dissipation (PDin W). =CPD VCC2fiN+ (CL VCC2fo) where: = input frequency in MHz, fo= output frequency in MHz= output load capacitance inpF
VCC= supply voltage in Volts= number of inputs switching
(CL VCC2fo)= sum of the outputs.
ICC supply
current
VCC = 3.6 V; VI =VCCor GND; =0A
-0.1 10 - 40 A
ICC additional
supply
current
per input pin;
VCC= 2.7Vto 3.6V; =VCC 0.6 V; IO =0A 5 500 - 5000 A input
capacitance
VCC= 0 V to 3.6V; =GNDto VCC
-4.0 - - - pF
Table 6. Static characteristics …continuedAt recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Table 7. Dynamic characteristicsVoltages are referenced to GND (ground=0 V). For test circuit see Figure7.
tpd propagation delay nA,nBto nY; see Figure6 [2]
VCC = 1.2 V - 11.0 - - - ns
VCC = 1.65 V to 1.95 V 0.5 4.2 9.0 0.5 10.4 ns
VCC= 2.3 V to 2.7V 1.0 2.5 6.9 1.0 8.0 ns
VCC= 2.7V 1.5 2.5 4.8 1.5 5.6 ns
VCC= 3.0 V to 3.6V 1.0 2.3 4.1 1.0 4.8 ns
tsk(o) output skew time VCC= 3.0 V to 3.6V [3] - - 1.0 - 1.5 ns
CPD power dissipation
capacitance
per gate; VI =GNDto VCC [4]
VCC = 1.65 V to 1.95 V - 4.4 - pF
VCC = 2.3 V to 2.7 V - 7.7 - - - pF
VCC = 3.0 V to 3.6 V - 10.5 - - - pF
NXP Semiconductors 74L VC08A
Quad 2-input AND gate
11. AC waveformsNXP Semiconductors 74L VC08A
Quad 2-input AND gate
Table 8. Test data1.2V VCC 2 ns 30pF 1 k
1.65Vto 1.95V VCC 2 ns 30pF 1 k
2.3Vto2.7V VCC 2 ns 30pF 500
2.7V 2.7V 2.5ns 50pF 500
3.0Vto 3.6V 2.7V 2.5ns 50pF 500