74LV125PW Fast Delivery |IC PHOENIX CO.,LIMITED

74LV125PW ,Quad buffer/line driver; 3-stateFEATURES DESCRIPTIONThe 74LV125 is a low-voltage Si-gate CMOS device and is pin and• Wide operating ..
74LV125PW ,Quad buffer/line driver; 3-stateapplications: 1.0 to 3.6 VThe 74LV125 consists of four non-inverting buffers/line drivers with• Acc ..
74LV125PW ,Quad buffer/line driver; 3-stateapplications: 1.0 V to 3.6 Vn Accepts TTL input levels between V = 2.7 V and V = 3.6 VCC CCn Typica ..
74LV125PW ,Quad buffer/line driver; 3-stateapplications: 1.0 to 3.6 VThe 74LV125 consists of four non-inverting buffers/line drivers with• Acc ..
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74LV125PW
Quad buffer/line driver; 3-state
General descriptionThe 74LV125 is a low-voltage Si-gate CMOS device that is pin and function compatible
with 74HC125 and 74HCT125.
The 74LV125 provides four non-inverting buffer/line drivers with 3-state outputs. The
3-state outputs (nY) are controlled by the output enable input (nOE). A HIGH at nOE
causes the outputs to assume a high-impedance OFF-state. Features Wide operating voltage: 1.0 V to 5.5 V Optimized for low voltage applications: 1.0 V to 3.6 V Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25°C Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and
Tamb =25°C ESD protection: HBM JESD22-A114E exceeds 2000V MM JESD22-A115-A exceeds 200V Multiple package options Speciﬁed from −40 °Cto+85 °C and from −40°Cto +125°C Ordering information
74L V125
Quad buffer/line driver; 3-state
Rev. 03 — 7 April 2009 Product data sheet
Table 1. Ordering information
74LV125N −40°Cto +125°C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1
74LV125D −40°Cto +125°C SO14 plastic small outline package; 14 leads;
body width 3.9 mm
SOT108-1
74LV125DB −40°Cto +125°C SSOP14 plastic shrink small outline package; 14 leads;
body width 5.3 mm
SOT337-1
74LV125PW −40°Cto +125°C TSSOP14 plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT402-1
NXP Semiconductors 74L V125
Quad buffer/line driver; 3-state Functional diagram Pinning information
5.1 Pinning
NXP Semiconductors 74L V125
Quad buffer/line driver; 3-state
5.2 Pin description Functional description
[1]H= HIGH voltage level; L= LOW voltage level; X= don’t care; Z= high-impedance OFF-state. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For DIP14 packages: above 70 °C the value of Ptot derates linearly with 12 mW/K.
For SO14 packages: above 70 °C the value of Ptot derates linearly with 8 mW/K.
For (T)SSOP14 packages: above 60 °C the value of Ptot derates linearly with 5.5 mW/K.
Table 2. Pin description
1OE, 2OE, 3OE, 4OE, 1, 4, 10, 13 output enable input (active LOW)
1A, 2A, 3A, 4A 2, 5, 9, 12 data input , 2Y, 3Y, 4Y 3, 6, 8, 11 data output
GND 7 ground (0V)
VCC 14 supply voltage
Table 3. Function table[1]
LLL H Z
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0V).
VCC supply voltage −0.5 +7.0 V
IIK input clamping current VI < −0.5 V orVI >VCC+ 0.5V [1]- ±20 mA
IOK output clamping current VO< −0.5 V orVO >VCC+ 0.5V [1]- ±50 mA output current VO = −0.5 V to (VCC+ 0.5V) - ±35 mA
ICC supply current - 70 mA
IGND ground current −70 - mA
Tstg storage temperature −65 +150 °C
Ptot total power dissipation Tamb= −40°Cto +125°C [2]
DIP14 - 750 mW
SO14, SSOP14, TSSOP14 - 500 mW
NXP Semiconductors 74L V125
Quad buffer/line driver; 3-state Recommended operating conditions
[1] The static characteristics are guaranteed from VCC = 1.2 V to VCC = 5.5 V, but LV devices are guaranteed to function down to
VCC=1.0 V (with input levels GND or VCC). Static characteristics
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
VCC supply voltage[1] 1.0 3.3 5.5 V input voltage 0 - VCC V output voltage 0 - VCC V
Tamb ambient temperature −40 +25 +125 °C
Δt/ΔV input transition rise and fall rate VCC = 1.0 V to 2.0 V - - 500 ns/V
VCC = 2.0 V to 2.7 V - - 200 ns/V
VCC = 2.7 V to 3.6 V - - 100 ns/V
VCC = 3.6 V to 5.5 V - - 50 ns/V
Table 6. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
VIH HIGH-level input voltage VCC = 1.2 V 0.9 - - 0.9 - V
VCC = 2.0 V 1.4 - - 1.4 - V
VCC = 2.7 V to 3.6 V 2.0 - - 2.0 - V
VCC = 4.5 V to 5.5 V 0.7VCC - - 0.7VCC -V
VIL LOW-level input voltage VCC = 1.2 V - - 0.3 - 0.3 V
VCC = 2.0 V - - 0.6 - 0.6 V
VCC = 2.7 V to 3.6 V - - 0.8 - 0.8 V
VCC = 4.5 V to 5.5 V - - 0.3VCC - 0.3VCCV
VOH HIGH-level output voltage VI = VIH or VIL
IO = −100 μA; VCC = 1.2V - 1.2 - - - V
IO = −100 μA; VCC = 2.0V 1.8 2.0 - 1.8 - V
IO = −100 μA; VCC = 2.7V 2.5 2.7 - 2.5 - V
IO = −100 μA; VCC = 3.0V 2.8 3.0 - 2.8 - V
IO = −100 μA; VCC = 4.5V 4.3 4.5 - 4.3 - V
IO = −8 mA; VCC = 3.0V 2.4 2.82 - 2.2 - V
IO = −16 mA; VCC = 4.5V 3.6 4.2 - 3.5 - V
NXP Semiconductors 74L V125
Quad buffer/line driver; 3-state
[1] Typical values are measured at Tamb = 25°C.
10. Dynamic characteristics
VOL LOW-level output voltage VI = VIH or VIL
IO = 100 μA; VCC = 1.2V - 0 - - - V
IO = 100 μA; VCC = 2.0V - 0 0.2 - 0.2 V
IO = 100 μA; VCC = 2.7V - 0 0.2 - 0.2 V
IO = 100 μA; VCC = 3.0V - 0 0.2 - 0.2 V
IO = 100 μA; VCC = 4.5V - 0 0.2 - 0.2 V
IO = 8 mA; VCC = 3.0V - 0.20 0.40 - 0.50 V
IO = 16 mA; VCC = 4.5V - 0.35 0.55 - 0.65 V input leakage current VI =VCCor GND;
VCC= 5.5V - 1.0 - 1.0 μA
IOZ OFF-state output current VI =VIH or VIL; =VCCor GND;
VCC= 5.5V
--5 - 10 μA
ICC supply current VI = VCC or GND; IO = 0A;
VCC= 5.5V - 20 - 160 μA
ΔICC additional supply current per input; VI = VCC − 0.6V;
VCC= 2.7Vto 3.6V - 500 - 850 μA input capacitance - 3.5 - - - pF
Table 6. Static characteristics …continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground=0 V). For test circuit see Figure8.
tpd propagation delay nAto nY; see Figure6 [2]
VCC = 1.2 V - 55 - - - ns
VCC = 2.0 V - 19 24 - 31 ns
VCC = 2.7 V - 14 18 - 23 ns
VCC = 3.0 V to 3.6 V; CL =15pF [3] -9 - - - ns
VCC = 3.0 V to 3.6 V [3] - 10 14 - 18 ns
VCC = 4.5 V to 5.5 V - - 12 - 15 ns
ten enable time nOEto nY; see Figure7 [2]
VCC = 1.2 V - 75 - - - ns
VCC = 2.0 V - 26 31 - 39 ns
VCC = 2.7 V - 19 23 - 29 ns
VCC = 3.0 V to 3.6 V [3] - 14 18 - 23 ns
VCC = 4.5 V to 5.5 V - - 15 - 19 ns
NXP Semiconductors 74L V125
Quad buffer/line driver; 3-state
[1] All typical values are measured at Tamb =25°C.
[2] tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[3] Typical values are measured at nominal supply voltage (VCC = 3.3V).
[4] CPD is used to determine the dynamic power dissipation (PDin μW). =CPD× VCC2×fi× N+ Σ(CL× VCC2×fo) where: = input frequency in MHz, fo= output frequency in MHz= output load capacitance inpF
VCC= supply voltage in Volts= number of inputs switching
Σ(CL× VCC2×fo)= sum of the outputs.
11. Waveforms
tdis disable time nOEto nY; see Figure7 [2]
VCC = 1.2 V - 65 - - - ns
VCC = 2.0 V - 24 32 - 39 ns
VCC = 2.7 V - 18 24 - 29 ns
VCC = 3.0 V to 3.6 V [3] - 14 20 - 24 ns
VCC = 4.5 V to 5.5 V - - 17 - 21 ns
CPD power dissipation
capacitance=50 pF; fi = 1 MHz;= GNDto VCC; VCC = 3.3 V
[4] -22 - - - pF
Table 7. Dynamic characteristics …continued
Voltages are referenced to GND (ground=0 V). For test circuit see Figure8.
NXP Semiconductors 74L V125
Quad buffer/line driver; 3-state
Table 8. Measurement points
< 2.7 V 0.5VCC 0.5VCC VOL + 0.1VCC VOH − 0.1VCC
2.7 V to 3.6V 1.5 V 1.5 V VOL + 0.3 V VOH − 0.3 V
≥ 4.5 V 0.5VCC 0.5VCC VOL + 0.1VCC VOH − 0.1VCC
NXP Semiconductors 74L V125
Quad buffer/line driver; 3-state
Table 9. Test data
< 2.7 V VCC ≤ 2.5 ns 50 pF 1kΩ open GND 2VCC
2.7 V to 3.6V 2.7 V ≤ 2.5 ns 15 pF , 50 pF 1kΩ open GND 2VCC
≥ 4.5 V VCC ≤ 2.5 ns 50 pF 1kΩ open GND 2VCC

Partno	Mfg	Dc	Qty	Available	Descript
74LV125PW	NXP	N/a	1188	avai	Quad buffer/line driver; 3-state