74HCT3G04DP Fast Delivery |IC PHOENIX CO.,LIMITED

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74HCT3G04DP
Inverter
1. General description
The 74HC3G04; 74HCT3G04 is a triple inverter. Inputs include clamp diodes. This
enables the use of current limiting resistors to interface inputs to voltages in excess of
VCC.
2. Features and benefits Wide supply voltage range from 2.0 Vto 6.0V Input levels: For 74HC3G04: CMOS level For 74HCT3G04: TTL level Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Multiple package options ESD protection: HBM JESD22-A114E exceeds 2000V MM JESD22-A115-A exceeds 200V Specified from 40 C to +85 C and 40 C to +125 C
3. Ordering information
74HC3G04; 74HCT3G04
Inverter
Rev. 4 — 2 October 2013 Product data sheet
Table 1. Ordering information
74HC3G04DP 40 C to +125 C TSSOP8 plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
74HCT3G04DP
74HC3G04DC 40 C to +125 C VSSOP8 plastic very thin shrink small outline package; 8 leads;
body width 2.3 mm
SOT765-1
74HCT3G04DC
74HC3G04GD 40 C to +125 C XSON8 plastic extremely thin small outline package; no leads; terminals; body 3  2  0.5 mm
SOT996-2
74HCT3G04GD
NXP Semiconductors 74HC3G04; 74HCT3G04
Inverter
4. Marking
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
6. Pinning information
6.1 Pinning
Table 2. Marking codes
74HC3G04DP H04
74HCT3G04DP T04
74HC3G04DC H04
74HCT3G04DC T04
74HC3G04GD H04
74HCT3G04GD T04
NXP Semiconductors 74HC3G04; 74HCT3G04
Inverter
6.2 Pin description
7. Functional description
[1] H = HIGH voltage level; L = LOW voltage level.
8. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP8 package: above 55 C the value of Ptot derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110 C the value of Ptot derates linearly with 8 mW/K.
For XSON8 package: above 45 C the value of Ptot derates linearly with 2.4 mW/K.
Table 3. Pin description
1A, 2A, 3A 1, 3, 6 data input
GND 4 ground (0 V) , 2Y, 3Y 7, 5, 2 data output
VCC 8 supply voltage
Table 4. Function table[1]
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +7.0 V
IIK input clamping current VI< 0.5VorVI >VCC + 0.5V [1]- 20 mA
IOK output clamping current VO< 0.5VorVO >VCC + 0.5V [1]- 20 mA output current VO = 0.5 V to (VCC +0.5V) [1] -25 mA
ICC supply current [1] -50 mA
IGND ground current [1] 50 - mA
Tstg storage temperature 65 +150 C dynamic power dissipation Tamb = 40Cto +125C [2]- 300 mW
NXP Semiconductors 74HC3G04; 74HCT3G04
Inverter
9. Recommended operating conditions
10. Static characteristics
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V input voltage 0 - VCC 0- VCC V output voltage 0 - VCC 0- VCC V
Tamb ambient temperature 40 +25 +125 40 +25 +125 C
t/V input transition rise
and fall rate
VCC = 2.0 V - - 625 - - - ns/V
VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V
VCC = 6.0 V - - 83 - - - ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb =25 C.
74HC3G04
VIH HIGH-level
input voltage
VCC = 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
VCC = 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
VCC = 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
VIL LOW-level
input voltage
VCC = 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
VCC = 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
VCC = 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
VOH HIGH-level
output voltage = VIH or VIL = 20 A; VCC= 2.0V 1.9 2.0 - 1.9 - 1.9 - V = 20 A; VCC= 4.5V 4.4 4.5 - 4.4 - 4.4 - V = 20 A; VCC= 6.0V 5.9 6.0 - 5.9 - 5.9 - V = 4.0 mA; VCC= 4.5V 4.18 4.32 - 4.13 - 3.7 - V = 5.2 mA; VCC= 6.0V 5.68 5.81 - 5.63 - 5.2 - V
VOL LOW-level
output voltage = VIH or VIL = 20 A; VCC= 2.0V - 0 0.1 - 0.1 - 0.1 V = 20 A; VCC= 4.5V - 0 0.1 - 0.1 - 0.1 V = 20 A; VCC= 6.0V - 0 0.1 - 0.1 - 0.1 V = 4.0 mA; VCC= 4.5V - 0.15 0.26 - 0.33 - 0.4 V = 5.2 mA; VCC= 6.0V - 0.16 0.26 - 0.33 - 0.4 V input leakage
current =VCCor GND; VCC =6.0V - - 0.1 - 1.0 - 1.0 A
ICC supply current per input pin; VCC =6.0V; =VCCor GND; IO =0A; - 1.0 - 10 - 20 A
NXP Semiconductors 74HC3G04; 74HCT3G04
Inverter
11. Dynamic characteristics input
capacitance
-1.5 - - - - - pF
74HCT3G04
VIH HIGH-level
input voltage
VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
VIL LOW-level
input voltage
VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
VOH HIGH-level
output voltage = VIH or VIL = 20 A; VCC= 4.5V 4.4 4.5 - 4.4 - 4.4 - V = 4.0 mA; VCC= 4.5V 4.18 4.32 - 4.13 - 3.7 - V
VOL LOW-level
output voltage = VIH or VIL = 20 A; VCC= 4.5V - 0 0.1 - 0.1 - 0.1 V = 4.0 mA; VCC= 4.5V - 0.15 0.26 - 0.33 - 0.4 V input leakage
current =VCCor GND; VCC =5.5V - - 0.1 - 1.0 - 1.0 A
ICC supply current per input pin; VCC =5.5V; =VCCor GND; IO =0A; - 1.0 - 10 - 20 A
ICC additional
supply current
per input;
VCC= 4.5Vto 5.5V; =VCC 2.1 V; IO =0A - 300 - 375 - 410 A input
capacitance
-1.5 - - - - - pF
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb =25 C.
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground =0 V); all typical values are measured at Tamb =25 C; for test circuit see Figure7.
74HC3G04
tpd propagation
delayto nY; see Figure6 [1]
VCC = 2.0 V - 22 75 - 90 - 110 ns
VCC = 4.5 V - 8 15 - 18 - 22 ns
VCC = 6.0 V - 6 13 - 16 - 20 ns transition
time
see Figure6 [2]
VCC = 2.0 V - 18 75 - 95 - 125 ns
VCC = 4.5 V - 6 15 - 19 - 25 ns
VCC = 6.0 V - 5 13 - 16 - 20 ns
CPD power
dissipation
capacitance =GNDto VCC [3] -9- - - - - pF
NXP Semiconductors 74HC3G04; 74HCT3G04
Inverter
[1] tpd is the same as tPLH and tPHL.
[2] tt is the same as tTLH and tTHL.
[3] CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD  VCC 2  fi  N + (CL  VCC 2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL  VCC 2  fo) = sum of outputs.
12. Waveforms
74HCT3G04
tpd propagation
delayto nY; see Figure6 [1]
VCC = 4.5 V - 10 18 - 23 - 29 ns transition
time
VCC = 4.5 V; see Figure6 [2] - 6 15 - 19 - 22 ns
CPD power
dissipation
capacitance =GNDto VCC 1.5V [3] -9- - - - - pF
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground =0 V); all typical values are measured at Tamb =25 C; for test circuit see Figure7.
Table 9. Measurement points
74HC3G04 0.5  VCC 0.5  VCC
74HCT3G04 1.3 V 1.3 V
NXP Semiconductors 74HC3G04; 74HCT3G04
Inverter
Table 10. Test data
74HC3G04 VCC  6ns 50 pF 1k open
74HCT3G04 3V  6ns 50 pF 1k open

Partno	Mfg	Dc	Qty	Available	Descript
74HCT3G04DP	NXP/PHILIPS	N/a	3000	avai	Inverter