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Partno	Mfg	Dc	Qty	Available	Descript
74HCT1G00GV	PHI	N/a	12500	avai	74HC1G00; 74HCT1G00; 2-input NAND gate

74HCT1G00GV ,74HC1G00; 74HCT1G00; 2-input NAND gateFEATURES DESCRIPTION• Wide supply voltage range from 2.0 to 6.0 V The 74HC1G/HCT1G00 is a high spee ..
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74HCT1G00GV
2-input NAND gate

Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00
FEATURES Wide supply voltage range from 2.0to 6.0V Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Very small 5 pins package Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G00 is a high speed Si-gate CMOS
device.
The 74HC1G/HCT1G00 provides the 2-input NAND
function. The standard output currents are1⁄2 comparedto
the 74HC/HCT00.
QUICK REFERENCE DATA
GND=0 V; Tamb =25 °C; tr =tf≤ 6.0 ns.
Notes CPD is used to determine the dynamic power dissipation (PDin μW). =CPD× VCC2×fi+∑ (CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in Volts; (CL× VCC2×fo)= sum of outputs. For HC1G the condition is VI= GNDto VCC.
For HCT1G the condition is VI= GNDto VCC− 1.5V.
FUNCTION TABLE
See note1.
Note H= HIGH voltage level;= LOW voltage level.
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00
ORDERING INFORMATION
PINNING
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referencedto GND (ground=0 V);
see note1 and2.
Notes Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. Above 55 °C the value of PD derates linearly with 2.5 mW/K.
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00 CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note All typical values are measured at Tamb =25 °C.
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00
Family 74HCT1G
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note All typical values are measured at Tamb =25 °C.
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00 CHARACTERISTICS
Type 74HC1G00
GND=0 V; tr =tf≤ 6.0 ns; CL =50pF.
Note All typical values are measured at Tamb =25 °C.
Type 74HCT1G00
GND=0 V; tr =tf≤ 6.0 ns; CL =50pF.
Note All typical values are measured at Tamb =25 °C.
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00 WAVEFORMS