74HC2G34GW-74HCT2G34GW Fast Delivery |IC PHOENIX CO.,LIMITED

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74HC2G34GW-74HCT2G34GW
Dual buffer gate
General descriptionThe 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device.
The 74HC2G34; 74HCT2G34 provides two buffers. Features Wide supply voltage range from 2.0 Vto 6.0V Complies with JEDEC standard no. 7A High noise immunity ESD protection: HBM JESD22-A114-D exceeds 2000V MM JESD22-A115-A exceeds 200V Low power dissipation Balanced propagation delays Unlimited input rise and fall times Multiple package options Speciﬁed from −40 °Cto+85 °C and −40°Cto +125°C Ordering information Marking
74HC2G34; 74HCT2G34
Dual buffer gate
Rev. 01 — 6 October 2006 Product data sheet
Table 1. Ordering information
74HC2G34GW −40 °C to +125°C SC-88 plastic surface-mounted package; 6 leads SOT363
74HC2G34GV −40 °C to +125°C SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
74HCT2G34GW −40 °C to +125°C SC-88 plastic surface-mounted package; 6 leads SOT363
74HCT2G34GV −40 °C to +125°C SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 2. Marking
74HC2G34GW PA
74HC2G34GV P34
74HCT2G34GW UA
74HCT2G34GV U34
NXP Semiconductors 74HC2G34; 74HCT2G34
Dual buffer gate Functional diagram Pinning information
6.1 Pinning
6.2 Pin description
Table 3. Pin description 1 data input
GND 2 ground (0V) 3 data input 4 data output
VCC 5 supply voltage 6 data output
NXP Semiconductors 74HC2G34; 74HCT2G34
Dual buffer gate Functional description
[1]H= HIGH voltage level;= LOW voltage level. Limiting values
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SC-88 and SC-74 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. Recommended operating conditions
Table 4. Function table[1]
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage −0.5 +7.0 V
IIK input clamping current VI < −0.5 V or VI >VCC+ 0.5 V [1]- ±20 mA
IOK output clamping current VO< −0.5 V or VO >VCC+ 0.5V [1]- ±20 mA output current VO = −0.5 V to VCC+ 0.5V [1]- ±25 mA
ICC supply current [1]- +50 mA
IGND ground current [1]- −50 mA
Tstg storage temperature −65 +150 °C
Ptot total power dissipation [2]- 250 mW
Table 6. Recommended operating conditions
Type 74HC2G34
VCC supply voltage 2.0 5.0 6.0 V input voltage 0 - VCC V output voltage 0 - VCC V
Tamb ambient temperature −40 +25 +125 °C rise time except for Schmitt trigger inputs
VCC = 2.0V - - 1000 ns
VCC = 4.5V - - 500 ns
VCC = 6.0V - - 400 ns fall time except for Schmitt trigger inputs
VCC = 2.0V - - 1000 ns
VCC = 4.5V - - 500 ns
VCC = 6.0V - - 400 ns
NXP Semiconductors 74HC2G34; 74HCT2G34
Dual buffer gate
10. Static characteristics
Type 74HCT2G34
VCC supply voltage 4.5 5.0 5.5 V input voltage 0 - VCC V output voltage 0 - VCC V
Tamb ambient temperature −40 +25 +125 °C rise time except for Schmitt trigger inputs
VCC = 4.5V - - 500 ns fall time except for Schmitt trigger inputs
VCC = 4.5V - - 500 ns
Table 6. Recommended operating conditions …continued
Table 7. Static characteristics for 74HC2G34
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Tamb = 25°C
VIH HIGH-level input voltage VCC = 2.0V 1.5 1.2 - V
VCC = 4.5V 3.15 2.4 - V
VCC = 6.0V 4.2 3.2 - V
VIL LOW-level input voltage VCC = 2.0V - 0.8 0.5 V
VCC = 4.5V - 2.1 1.35 V
VCC = 6.0V - 2.8 1.8 V
VOH HIGH-level output voltage VI = VIH or VIL= −20 μA; VCC = 2.0V 1.9 2.0 - V= −20 μA; VCC = 4.5V 4.4 4.5 - V= −20 μA; VCC = 6.0V 5.9 6.0 - V= −4.0 mA; VCC= 4.5V 4.18 4.32 - V= −5.2 mA; VCC= 6.0V 5.68 5.81 - V
VOL LOW-level output voltage VI = VIH or VIL = 20 μA; VCC = 2.0V - 0 0.1 V = 20 μA; VCC = 4.5V - 0 0.1 V = 20 μA; VCC = 6.0V - 0 0.1 V = 4.0 mA; VCC = 4.5V - 0.15 0.26 V = 5.2 mA; VCC = 6.0V - 0.16 0.26 V input leakage current VI = GND or VCC; VCC = 6.0V - - ±0.1 μA
ICC supply current VI = GND or VCC; IO = 0 A;
VCC = 6.0V - 1.0 μA input capacitance - 1.5 - pF
NXP Semiconductors 74HC2G34; 74HCT2G34
Dual buffer gate
Tamb = −40 °C to +85°C
VIH HIGH-level input voltage VCC = 2.0V 1.5 - - V
VCC = 4.5V 3.15 - - V
VCC = 6.0V 4.2 - - V
VIL LOW-level input voltage VCC = 2.0V - - 0.5 V
VCC = 4.5V - - 1.35 V
VCC = 6.0V - - 1.8 V
VOH HIGH-level output voltage VI = VIH or VIL= −20 μA; VCC = 2.0V 1.9 - - V= −20 μA; VCC = 4.5V 4.4 - - V= −20 μA; VCC = 6.0V 5.9 - - V= −4.0 mA; VCC = 4.5V 4.13 - - V= −5.2 mA; VCC = 6.0V 5.63 - - V
VOL LOW-level output voltage VI = VIH or VIL = 20 μA; VCC = 2.0V - - 0.1 V = 20 μA; VCC = 4.5V - - 0.1 V = 20 μA; VCC = 6.0V - - 0.1 V = 4.0 mA; VCC = 4.5V - - 0.33 V = 5.2 mA; VCC = 6.0V - - 0.33 V input leakage current VI = GND or VCC; VCC = 6.0V - - ±1.0 μA
ICC supply current VI = GND or VCC; IO = 0 A;
VCC = 6.0V - 10.0 μA
Tamb = −40 °C to +125°C
VIH HIGH-level input voltage VCC = 2.0V 1.5 - - V
VCC = 4.5V 3.15 - - V
VCC = 6.0V 4.2 - - V
VIL LOW-level input voltage VCC = 2.0V - - 0.5 V
VCC = 4.5V - - 1.35 V
VCC = 6.0V - - 1.8 V
VOH HIGH-level output voltage VI = VIH or VIL= −20 μA; VCC = 2.0V 1.9 - - V= −20 μA; VCC = 4.5V 4.4 - - V= −20 μA; VCC = 6.0V 5.9 - - V= −4.0 mA; VCC = 4.5V 3.7 - - V= −5.2 mA; VCC = 6.0V 5.2 - - V
Table 7. Static characteristics for 74HC2G34 …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
NXP Semiconductors 74HC2G34; 74HCT2G34
Dual buffer gate
VOL LOW-level output voltage VI = VIH or VIL = 20 μA; VCC = 2.0V - - 0.1 V = 20 μA; VCC = 4.5V - - 0.1 V = 20 μA; VCC = 6.0V - - 0.1 V = 4.0 mA; VCC = 4.5V - - 0.4 V = 5.2 mA; VCC = 6.0V - - 0.4 V input leakage current VI = GND or VCC; VCC = 6.0V - - ±1.0 μA
ICC supply current VI = GND or VCC; IO = 0 A;
VCC = 6.0V - 20.0 μA
Table 7. Static characteristics for 74HC2G34 …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Table 8. Static characteristics for 74HCT2G34
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Tamb = 25°C
VIH HIGH-level input voltage VCC = 4.5 V to 5.5V 2.0 1.6 - V
VIL LOW-level input voltage VCC = 4.5 V to 5.5V - 1.2 0.8 V
VOH HIGH-level output voltage VI = VIH or VIL= −20 μA; VCC = 4.5V 4.4 4.5 - V= −4.0 mA; VCC = 4.5V 4.18 4.32 - V
VOL LOW-level output voltage VI = VIH or VIL = 20 μA; VCC = 4.5V - 0 0.1 V = 4.0 mA; VCC = 4.5V - 0.15 0.26 V input leakage current VI = GND or VCC; VCC = 5.5V - - ±0.1 μA
ICC supply current VI = GND or VCC; IO = 0A;
VCC = 5.5V - 1.0 μA
ΔICC additional supply current VI = VCC − 2.1V;
VCC= 4.5V to 5.5 V; IO = 0 A - 300 μA input capacitance - 1.5 - pF
Tamb = −40 °C to +85°C
VIH HIGH-level input voltage VCC = 4.5 V to 5.5V 2.0 - - V
VIL LOW-level input voltage VCC = 4.5 V to 5.5V - - 0.8 V
VOH HIGH-level output voltage VI = VIH or VIL= −20 μA; VCC = 4.5V 4.4 - - V= −4.0 mA; VCC = 4.5V 4.13 - - V
VOL LOW-level output voltage VI = VIH or VIL = 20 μA; VCC = 4.5V - - 0.1 V = 4.0 mA; VCC = 4.5V - - 0.33 V input leakage current VI = GND or VCC; VCC = 5.5V - - ±1.0 μA
ICC supply current VI = GND or VCC; IO = 0A;
VCC = 5.5V - 10.0 μA
ΔICC additional supply current VI = VCC − 2.1V;
VCC= 4.5V to 5.5 V; IO = 0 A - 375 μA
NXP Semiconductors 74HC2G34; 74HCT2G34
Dual buffer gate
11. Dynamic characteristics
Tamb = −40 °C to +125°C
VIH HIGH-level input voltage VCC = 4.5 V to 5.5V 2.0 - - V
VIL LOW-level input voltage VCC = 4.5 V to 5.5V - - 0.8 V
VOH HIGH-level output voltage VI = VIH or VIL= −20 μA; VCC = 4.5V 4.4 - - V= −4.0 mA; VCC = 4.5V 3.7 - - V
VOL LOW-level output voltage VI = VIH or VIL = 20 μA; VCC = 4.5V - - 0.1 V = 4.0 mA; VCC = 4.5V - - 0.4 V input leakage current VI = GND or VCC; VCC = 5.5V - - ±1.0 μA
ICC supply current VI = GND or VCC; IO = 0A;
VCC = 5.5V - 20.0 μA
ΔICC additional supply current VI = VCC − 2.1V;
VCC= 4.5V to 5.5 V; IO = 0 A - 410 μA
Table 8. Static characteristics for 74HCT2G34 …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground=0 V); for test circuit see Figure6.
74HC2G34
tpd propagation delay nA to nY; see Figure5 [1]
VCC = 2.0 V; CL=50pF - 29 75 - 95 125 ns
VCC = 4.5 V; CL=50pF - 9 15 - 19 25 ns
VCC = 6.0 V; CL=50pF - 8 13 - 16 20 ns transition time nY; see Figure5 [2]
VCC = 2.0 V; CL=50pF - 18 75 - 95 125 ns
VCC = 4.5 V; CL=50pF - 6 15 - 19 25 ns
VCC = 6.0 V; CL=50pF - 5 13 - 16 20 ns
CPD power dissipation
capacitance = GND to VCC [3] -10- - - - pF

Partno	Mfg	Dc	Qty	Available	Descript
74HC2G34GW	NXP	N/a	15000	avai	Dual buffer gate
74HCT2G34GW	NXP	N/a	15000	avai	Dual buffer gate