74HC1G00GW ,2-input NAND gateFEATURES QUICK REFERENCE DATAGND = 0 V; T =25 °C; t =t ≤ 6.0 nsamb r f• Wide operating voltage:2.0 ..
74HC1G00GW ,2-input NAND gateINTEGRATED CIRCUITSDATA SHEET74HC1G00; 74HCT1G002-input NAND gate1998 Jul 30Product specificationFil ..
74HC1G00GW ,2-input NAND gateGeneral descriptionThe 74HC1G00; 74HCT1G00 is a single 2-input NAND gate. Inputs include clamp diod ..
74HC1G02GV ,74HC1G02; 74HCT1G02; 2-input NOR gateFeaturesn Symmetrical output impedancen High noise immunityn Low power dissipationn Balanced propag ..
74HC1G02GW ,2-input NOR gateGeneral description74HC1G02 and 74HCT1G02 are high speed Si-gate CMOS devices. They provide a2-inpu ..
74HC1G04GV ,Inverter
74LVC1G08GF ,Single 2-input AND gateFeatures and benefits Wide supply voltage range from 1.65 V to 5.5 V High noise immunity Complie ..
74LVC1G08GM ,Single 2-input AND gatePin configuration SOT353-1 and SOT753 Fig 5.
74LVC1G08GV ,Single 2-input AND gatePin configuration SOT886 74LVC1G0874LVC1G08B 1 5 VCCB 1 6 VCC3GNDA 2 5 n.c.A 2 4 YGND 3 4 Y001aae97 ..
74LVC1G08GW ,Single 2-input AND gatePin configuration SOT891, SOT1115 and Fig 7.
74LVC1G08W5-7 , SINGLE 2 INPUT POSITIVE AND GATE
74LVC1G10DW-7 , SINGLE 3 INPUT POSITIVE NAND GATE
74HC1G00GW
2-input NAND gate
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00;
74HCT1G00
FEATURES Wide operating voltage:
2.0to 6.0V Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Very small 5 pins package Output capability: standard.
DESCRIPTIONThe 74HC1G/HCT1G00 is a high
speed Si-gate CMOS device.
The 74HC1G/HCT1G00 provides the
2-input NAND function. The standard
output currents are1 ⁄2 compared to
the 74HC/HCT00.
FUNCTION TABLESee note1.
Note H= HIGH voltage level;= LOW voltage level.
QUICK REFERENCE DATAGND=0 V; Tamb =25 °C; tr =tf≤ 6.0ns
Notes CPD is used to determine the dynamic power dissipation (PDin μW). =CPD× VCC2×fi+∑ (CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in V; (CL× VCC2×fo)= sum of outputs. For HC1G the condition is VI= GNDto VCC.
For HCT1G the condition is VI= GNDto VCC− 1.5V.
PINNING
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00
ORDERING INFORMATION
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground=0 V);
see note1 and2.
Notes Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00
DC CHARACTERISTICS FOR THE 74HC1GOver recommended operating conditions; voltages are referenced to GND (ground=0V).
Note All typical values are measured at Tamb =25 °C.
Philips Semiconductors Product specification
2-input NAND gate 74HC1G00; 74HCT1G00
DC CHARACTERISTICS FOR THE 74HCT1GOver recommended operating conditions; voltages are referenced to GND (ground=0V).
Note All typical values are measured at Tamb =25 °C.
